List of invited talks

• Jiro Temmyo (Shizuoka University, Japan): Material and device aspects of MOCVD ZnO 
  
• Yasushi Nanishi (Ritsumeikan University, Japan): Recent Progress and challenges of InN and related alloys for device applications
  
• Tomás Palacios (Massachussets Institute of Technology, USA): High power high frequency AlGaN-GaN HEMTs 
  
• Daisuke Ueda (Panasonic Corp, Japan): III-N Power Electron Devices
  
• José Millán (IMB-CNM-CSIC, Spain): Power Electronics for a rational use of energy
  
• Volker Cimalla (IA Freiburg, Germany): MEMS for harsh environments 
  
• Shinichi Takagi (Univ. Tokio, Japan): III-V semiconductor channel MOS Device technologies on Si CMOS platform
  
• Steve Ringel (Ohio State Institute, USA): Solar cells using metamorphic substrates
  
• Eric Tournié (Univ. Montpellier, France): Sb-based MID-Infrared Lasers
  
• Rudolf Hey (Paul Drude Institute, Germany): THz quantum cascade lasers
  
• Antonio Gnudi (Univ. Bologna, Italy): Graphene-based high-performance nanoelectronic devices
  
• Takao Someya (Univ. Tokyo, Japan): Large-area Electronics using printed organic transistors
  
• Chris Ford (Univ. Cambridge, U.K.): Novel designs for quantum computers using moving quantum dots
  
• Philippe Dueme (Thales Group, France): Integrated Circuits in GaN Technology: an European perspective
  
• Dimitris Pavlidis (Univ. Darmstadt, Germany): Energy harvesting using semiconductors