Institute for Optoelectronic Systems and Microtechnology
Universidad Politécnica de Madrid


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Departamento de Ingeniería Electrónica

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Escuela Técnica Superior de Ingenieros de Telecomunicación

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Universidad Politécnica de Madrid

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Year 2017
  • M. M.Diaz Michelena, J.L Mesa Uña, M. Perez Jimenez, M. Maicas Ramos, P. Cobos Arribas, C. Aroca Hernandez-Ros, ''A novel induction-based device for the measurement of the complex magnetic susceptibility'', Sensors and Actuators, A: Physical, volume 263, pages 471-479 (2017).
  • C.Barrios, V. Canalejas-Tejero, ''A top-down approach for fabricating three-dimensional closed hollow nanostructures with permeable thin metal walls'', Beilstein Journal of Nanotechnology,volume 8, issue 1, pages 1231-1237 (2017).
  • CA. Barrios, V. Canalejas-Tejero, ''An analysis of the surface-normal coupling efficiency of a metal grating coupler embedded in a Scotch tape optical waveguide'', Optics Communications, 382,477-484 (2017), doi: 10.1016/j.optcom.2016.08.037.
  • A.Kurtz, E. Muñoz, JM Chauveau, A. Hierro, ''Deep-level spectroscopy in metal-insulator-semiconductor structures'', Journal of Physics D: Applied Physics, 50, 6, 065104 (9 pp.), (2017), doi: 10.1088/1361-6463/aa5006.
  • D.Castilla, M. Maicas, J.L Prieto, M.P Proenca, ''Depinning process of magnetic domain walls in cylindrical nanowires with a chemical constraint'', Journal of Physics D: Applied Physics, 50, 10 (2017).
  • Z. Gao, M.F. Romero, A. Redondo-Cubero, M. A. Pampillón, E. San Andrés, F. Calle, ''Effects of Gd2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs'', IEEE Electron. Dev. Lett. (2017), in press. Print ISSN: 0741-3106, Online ISSN: 1558-0563, doi: 10.1109/LED.2017.2682795.
  • Z. Gacevic, M. Holmes, E. Chernysheva, M. Muller, A. Torres-Pardo, P. Veit, F. Bertram. J. Christen, J.M. González Calbet, Y. Arakawa, E. Calleja S. Lazic, ''Emission of Linearly Polarized Single Photons from Quantum Dots Contained in Nonpolar, Semipolar, and Polar Sections of Pencil-Like InGaN/GaN Nanowires'', ACS Photonics, 2017, 4 (3), pp 657-664 (2017), doi: 10.1021/acsphotonics.6b01030.
  • Z. Gacevic, E. Calleja, ''Ga(In)N nanowires grown by Molecular Beam Epitaxy: from quantum light sources to nano-transistors'', Novel Compound Semiconductor Nanowires: Materials, Devices, and Applications, Pan Stanford Publishing, Eds. F. Ishikawa and I. A. Buyanova (2017). CL.
  • M.P. Proenca, C. T. Sousa, J. Ventura, J.Garcia, M.Vazquez, J.P. Araujo, ''Identifying weakly-interacting single domain states in Ni nanowire arrays by FORC '', Journal of Alloys and Compounds, 699, 421-429, (2017), http://dx.doi.org/10.1016/j.jallcom.2016.12.340.
  • M.F. Romero, A.Bosca, J.Pedros, J. Martinez, R. Fandan, T. Palacios, F. Calle, ''Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs under Mist Exposure'', IEEE Electron Device Letters, vol pp, issue 99 (2017), doi: 10.1109/LED.2017.2747500.
  • C. Lopez, E.Ramos,M.Muñoz, S. Kar-Narayan, N.D. Mathur, J.L.Prieto,, ''Influence of the thermal contact resistance in current-induced domain wall depinning'', Journal of Physics D: Applied Physics, volume 50, Issue 32, article number 325001 (2017).
  • A.Guzman, R. Gargallo-Caballero, X.Lu, HT. Grahn, ''Laterally biased structures for room temperature operation of quantum-well infrared photodetectors'', Journal of Crystal Growth, in progress, (2017).
  • A.Huerta, LM.Guia, O. Klymov, V.Marin-Borras, C.Martinez-Tomas, J.Tamayo-Arriola, A. Kurtz, MM. Bajo, E. Muñoz, A. Hierro, V. Munoz-Sanjose, ''MOCVD growth of CdO very thin films: Problems and ways of solution'', Applied Surface Science, 385, 209-215 (2017), doi: 10.1016/j.apsusc.2016.05.113.
  • D. Cucak, M. Vasic, O. García, J.A. Oliver, P. Alou, JA. Cobos, A. Wang, S.Martín Horcajo, F. Romero F. Calle, ''Physics-based Analytical Model for Input, Output and Reverse Capacitance of a GaN HEMT with the Field-plate Structure'', IEEE Transactions on Power Electronics 32, 3, 2189-2202 (2017). doi: 10.1109/TPEL.2016.2569404 .
  • M.J. Milla, I. Hernandez-Rodriguez, J.Mendez, J.M. Garcia, J.M. Ulloa, A. Guzman , ''Scanning tunneling spectroscopic monitoring of surface states role on water passivation of InGaAs uncapped quantum dots'', RSC Advances, volume 7, issue 53, pages 33137-33142 (2017).
  • A. Bengoechea-Encabo,S.Albert, M. Muller, M. Xie, P. Veit, F. Bertram, M.A Sanchez-Garcia, J. Zuñiga-Perez, P.De Mierry, J. Christen, E. Calleja , ''Selective area growth of AlN/GaN nanocolumns on (0001) and (11-22) GaN/sapphire for semi-polar and non-polar AlN pseudo-templates'', Nanotechnology, vol 28, Issue 36, article number 365704 (2017).
  • S. Albert, A. Bengoechea-Encabo, MA.Sánchez-García, E. Calleja, ''Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma Assisted Molecular Beam Epitaxy'', Semiconductors and Semimetals,96, 7, 231 ed. by Z. Mi and C. Jagadish (2017). CL .
  • G. Ielasi, P. Hui, C.Palacio, E.Muñoz, G. Orellana , ''Silane control of the electron injection and oxygen sensitivity of dye-silane-GaN hybrid materials for luminescent chemical sensing'', Sensors and Actuators, B: Chemical, vol. 254, January 2018, Pages 926-934 .
  • A.Migliorini, B. Kuerbanjiang, T. Huminiuc, D. Kepaptsoglou, M. Muñoz, J.L. Fernández Cuñado, J. Camarero, C. Aroca, G. Vallejo-Fernández, V.K. Lazarov, J.L. Prieto, ''Spontaneous exchange bias formation driven by a structural phase transition in the antiferromagnetic material'', Nature Materials. En Prensa (2017), DOI: 10.1038/NMAT5030 .
  • A. Gonzalo, A.D. Utrilla, D.F. Reyes, V. Braza, J.M. Llorens,D. Fuertes Marron, B. Alen, T. Ben, D. Gonzalez, A. Guzman, A. Hierro. J.M. Ulloa, ''Strain-balanced type-II superlattices for efficient multi-junction solar cells'', Scientific Reports, vol 7, Issue 1, 1 December 2017, Article number 4012 (2017).
  • A. Kanitz, J.S. Hoppius, M.Mar Sanz, M. Maicas, A. Ostendorf, E.L. Gurevich, ''Synthesis of Magnetic Nanoparticles by Ultrashort Pulsed Laser Ablation of Iron in Different Liquids'', ChemPhysChem, volume 18, Issue 9, pages 1155-1164 (2017).
  • M.P. Proenca, M. Rosmaninho, P.M. Resende, C.T. Sousa, J. Ventura, J.P. Araujo, L. Fernandes, P.B. Tavares, A.M. Pereira, ''Tailoring Bi-Te based nanomaterials by electrodeposition: Morphology and crystalline structure'', Materials Design, 118,168-174 (2017), http://dx.doi.org/10.1016/j.matdes.2017.01.020.
  • A.D. Utrilla, D.F. Reyes, J.M. Llorens, I. Artacho, T. Ben, D. Gonzalez, Z. Gacevic, A. Guzman, A. Hierro, J.M. Ulloa, ''The impact of alloyed capping layers on the performance of INAS/GAAS quantum dot solar cells'', Advances in Energy Research, volum 26, pages 83-122 (2017). Book Chapter.
  • T. Schimplkea, A. Avramescua, A. Kollera, A. Fernando-Saavedra, J. Hartmann, J. Ledig, A. Waag, M. Strassburg, H-J Lagauer., ''The influence of MOVPE growth conditions on the shell of core-shell GaN microrod structures'', Journal of Crystal Growth, 465, 34-42 (2017), http://dx.doi.org/10.1016/j.jcrysgro.2017.02.035.
  • A.D. Utrilla, D.F. Reyes, J.M. Llorens, I. Artacho, T. Ben, D. Gonzalez, Z. Gacevic, A. Kurtz, A. Guzman, A. Hierro, J.M. Ulloa, ''Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells '', Solar Energy Materials and Solar Cells, 159, 282-289, (2017). doi: 10.1016/j.solmat.2016.09.006 .
  • G. Quintana-Díaz, P. Mena-Rodríguez, I. Pérez-Álvarez, E. Jiménez, BP Dorta-Naranjo, S. Zazo, M. Pérez, E. Quevedo. L. Cardona, J.J Hernández, ''Underwater Electromagnetic Sensor Networks - Part I: Link Characterization'', Sensors (Basel).17(1): 189 (2017). doi: 10.3390/s17010189.
Year 2016
  • D. F. Reyes, A. D. Utrilla, T. Ben, J. J. Saborido, J. M. Ulloa, G. Bárcena-González, M. P. Guerrero-Lebrero, E. Guerrero, D. González, ''(S)TEM Analysis of the Strain and Morphology of InAs Quantum Dots using GaAs(Sb)(N) Capping Layers for Solar Cell Applications '', Microscopy and Microanalysis 22(S4), 46-47 (2016). doi:10.1017/S1431927616000428.
  • M. Pérez-Jiménez, B. Bordel Sánchez, R. Alcarria, ''A system for monitoring people based on improved wearable devices'', Research Briefs on Information & Communication Technology Evolution (ReBICTE), Vol. 2, Article No. 1 (2016).
  • Z. Gacevic, D. Lopez-Romero, TJ. Mangas, E. Calleja, ''A top-gate GaN nanowire metal-semiconductor field effect transistor with improved channel electrostatic control'', Applied Physics Letters, 108, 3, 033101 (2016), doi: 10.1063/1.4940197.
  • S. Ruiz-Gomez, R. Ranchal, M.Abuin, A.M. Aragon, V. Velasco, P. Marin, A. Mascaraque, L. Perez., ''Antiferromagnetic FeMn alloys electrodeposited from chloride-based electrolytes '', Physical Chemistry Chemical Physics, 18, 11, 21, 8212-8218 (2016) .
  • I.Lucas, D. Ciudad, M. Plaza, S.Ruiz-Gomez, C.Aroca, L.Perez, ''Assessment of Layer Thickness and Interface Quality in CoP Electrodeposited Multilayers'', ACS Appl. Mater. Interfaces, 2016, 8 (29),18930-18934 (2016), doi: 10.1021/acsami.6b02577.
  • A. Boscá, J. Pedrós, J. Martínez, T. Palacios, F. Calle , ''Automatic graphene transfer system for improved material quality and efficiency'', Scientific Reports 6, 21676; doi: 10.1038/srep21676 (2016).
  • VJ. Gomez, Z. Gacevic, PED. Soto-Rodriguez, P. Aseev, R. Notzel, E. Calleja, MA. Sanchez-Garcia, ''Comparative study of single InGaN layers grown on Si(111) and GaN(0001) templates: The role of surface wetting and epitaxial constraint'', Journal of Crystal Growth, 447, 48-54 (2016), doi: 10.1016/j.jcrysgro.2016.04.007.
  • P. Romero, P.A. Postigo, E. Baquedano, J. Martinez, A. Bosca, R. Guzman de Villoria, ''Controlled synthesis of nanocrystalline glass-like carbon thin films with tuneable electrical and optical properties'', Chemical Engineering Journal, 299, 1, 8-14 (2016), http://dx.doi.org/10.1016/j.cej.2016.04.005.
  • V. E. Demidov, M. Evelt, V. Bessonov, S. O. Demokritov, J. L. Prieto, M. Muñoz, J. Ben Youssef, V. V. Naletov, G. de Loubens, O. Klein, M. Collet, P. Bortolotti, V. Cros, A. Anane, ''Direct observation of dynamic modes excited in a magnetic insulator by pure spin current'', Scientific Reports 6, Article number: 32781 (2016) doi:10.1038/srep32781.
  • I. Griffiths, D. Cherns, S. Albert, A. Bengoechea, M.A. Sánchez, E. Calleja, T.Schimpke, M.Strassburg, ''Distinguishing Cubic and Hexagonal phases within InGaN/GaN micro-structures using Electron Energy Loss Spectroscopy'', J Microsc. 262(2):167-70. doi: 10.1111/jmi.12285 (2016).
  • A.Kurtz, A Hierro, M.López-Ponce, G Tabares, J M Chauveau, ''Electrical mechanisms for carrier compensation in homoepitaxial nonpolar m-ZnO doped with nitrogen'', Semicond. Sci. Technol. 31 (2016) 035010 (8pp) doi:10.1088/0268-1242/31/3/035010.
  • A. Pérez, G.F. Iriarte, V. Lebedev, F. Calle, ''Electro-optical characterization of IC compatible microcantilevers'', Microsystems Technology, 1-8 (2016), doi: 10.1007/s00542-015-2629-x.
  • P.E.D. Soto Rodríguez, C.M. Mari, S. Sanguinetti, R. Ruffo, R.Nötzel , ''Epitaxial InN/InGaN quantum dots on Si: Cl- anion selectivity and pseudocapacitor behavior'', Applied Physics Express, 9, 081004 (2016), doi:http://doi.org/10.7567/APEX.9.081004.
  • P. Corfdir, R. B. Lewis, O. Marquardt, H. Kupers, J. Grandal, E. Dimakis, A. Trampert, L. Geelhaar, O. Brandt, R. T. Phillips, ''Exciton recombination at crystal-phase quantum rings in GaAs/Inx Ga1-xAs core/multishell nanowires'', Appl. Phys. Lett. 109, 082107 (2016), doi: http://dx.doi.org/10.1063/1.4961245.
  • D. Gonzalez, D.F. Reyes, A.D. Utrilla, T. Ben, V. Braza, A. Guzman, A. Hierro, JM. Ulloa, ''General route for the decomposition of InAs quantum dots during the capping process'', Nanotechnology, 27, 12, 125703 (2016), doi: 10.1088/0957-4484/27/12/125703 .
  • M. Collet, X. de Milly, O. D Allivy Kelly, V.V. Naletov, R. Bernard, P. Bortolotti, J. Ben Youssef, V.E. Demidov, S.O. Demokritov, J.L. Prieto, M. Muñoz, V. Ros , A. Anane, G. de Loubens, O. Klein, ''Generation of coherent spin-wave modes in yttrium iron garnet microdiscs by spin-orbit torque'', Nature Communications 7, 10377 (2016) doi: 10.1038/ncomms10377.
  • M. Evelt, V. E. Demidov, V. Bessonov, S. O. Demokritov, J. L. Prieto, M. Muñoz, J. Ben Youssef, V. V. Naletov, G. de Loubens, O. Klein, M. Collet, K. Garcia-Hernandez, P. Bortolotti, V. Cros, A. Anane, ''High-efficiency control of spin-wave propagation in ultra-thin yttrium iron garnet by the spin-orbit torque '', Appl. Phys. Lett. 108, 172406 (2016); doi: 10.1063/1.4948252 View online: http://dx.doi.org/10.1063/1.4948252 View Table of Contents: http://aip.scitation.org/toc/apl/108/17.
  • A.D. Utrilla, J.M. Ulloa, Z. Gacevic, D.F. Reyes, I. Artacho, T. Ben, D. González, A. Hierro, A. Guzmán, ''Impact of alloyed capping layers on the performance of InAs quantum dot solar cells'', Solar Energy Materials & Solar Cells 144,128-35 (2016).
  • D.J. Choi, A. Boscá, J. Pedrós, J. Martínez, V. Barranco, J.M. Rojo, J.J. Yoo, Y.-H. Kim, F. Calle, ''Improvement of the adhesion between polyaniline and commercial carbon paper by acid treatment and its application in supercapacitor electrode'', Composite Interfaces, vol 23, Issue 2, 133-143 (2016), doi: 10.1080/09276440.2016.1112221..
  • P. Aseev, Z. Gacevic, A. Torres-Pardo, JM. Gonzalez-Calbet, E. Calleja, ''Improving optical performance of GaN nanowires grown by selective area growth homoepitaxy: Influence of substrate and nanowire dimensions'', Applied Physics Letters, 108, 25, 253109 (2016), doi: 10.1063/1.4954742.
  • Z.Gacevic, N.Vukmirovic, N.Garcia-Lepetit, A.Torres-Pardo, M. Muller, S.Metzner, S.Albert, A.Bengoechea-Encabo, F.Bertram, P.Veit, J.Christen, JM Gonzalez-Calbet, E. Calleja, ''Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires'', Physical Review B, 93, 12, 125436 (2016), doi: 10.1103/PhysRevB.93.125436.
  • Z.Gacevic, N. Vukmirovic, N. García-Lepetit, A. Torres-Pardo, M. Muller, S. Metzner, S. Albert, A. Bengoechea-Encabo, F. Bertram, P. Veit, J. Christen, J. M. González-Calbet, E. Calleja, ''Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires'', Phys. Rev. B 93, 125436 (2016), doi: https://doi.org/10.1103/PhysRevB.93.125436.
  • D. Gonzalez, D.F. Reyes, T. Ben, A.D. Utrilla, A. Guzman, A. Hierro, J.M. Ulloa, ''Influence of Sb/N contents during the capping process on the morphology of InAs/GaAs quantum dots '', Solar Energy Materials And Solar Cells, 145, 154-161 (2016), doi: 10.1016/j.solmat.2015.07.015 .
  • C.A. Barrios, V. Canalejas-Tejero, ''Light coupling in a Scotch tape via an integrated metal diffraction grating'', Optics Letters, 41, pp. 301-304 (2016).
  • CA. Barrios, V. Canalejas-Tejero, ''Micro-Shaping of Nanopatterned Surfaces by Electron Beam Irradiation'', Micromachines, 7, 4, 66 (2016). doi: 10.3390/mi7040066.
  • A.Prados, L.Perez, A.Guzman, R. Ranchal, ''Mixed Effects of the Atomic Arrangement and Surface Chemistry on the Electrodeposition of Bi Thin Films on n-GaAs Substrates'', Journal of Physical Chemistry C, 120, 49, 28295-28306 (2016), doi: 10.1021/acs.jpcc.6b09144.
  • A. Bengoechea-Encabo, S. Albert, M.A. Sanchez-Garcia, E. Calleja, ''Oxygen-related photoluminescence quenching in selectively grown GaN nanocolumns: Dependence on diameter'', Materials Science in Semiconductor Processing, 55 (2016), 59-62 http://dx.doi.org/10.1016/j.mssp.2016.03.018.
  • J. Pedros, A. Bosca, J. Martinez, S. Ruiz-Gomez, L. Perez, V. Barranco, F. Calle. , ''Polyaniline nanofiber sponge filled graphene foam as high gravimetric and volumetric capacitance electrode'', Journal of Power Sources, 317, 35-42 (2016); doi: 10.1016/j.jpowsour.2016.03.041.
  • A.Eljarrat, L.Lopez-Conesa, C.Magen, N.Garcia-Lepetit, Z. Gacevic, E.Calleja, F.Peiro, S.Estrade , ''Quantitative parameters for the examination of InGaN QW multilayers by low-loss EELS '', Physical Chemistry Chemical Physics, 18, 33, 23264-23276 (2016) .
  • CA. Barrios, ''Rapid On-Site Formation of a Free-Standing Flexible Optical Link for Sensing Applications'', Sensors, 16, 10, 1643 (2016), doi: 10.3390/s16101643.
  • FJ. Tilley, M. Roy, PA Mksym, PM. Koenraad, CM. Krammel, JM. Ulloa, ''Scanning tunneling microscopy contrast of isovalent impurities on the GaAs (110) surface explained with a geometrical model'', Physical Review B, 93,3,035313 (2016), doi: 10.1103/PhysRevB.93.035313.
  • V. Canalejas-Tejero, A. López, R. Casquel, M. Holgado, C.A. Barrios, ''Sensitive metal layer-assisted guided-mode resonance SU8 nanopillar array for label-free optical biosensing'', Sensors and Actuators B: Chemical, 226, pp. 204-210 (2016).
  • A. Minj, M. F. Romero, Y. Wang, O. Tuna, M. Feneberg, R. Goldhahn, G. Schmerber, P. Ruterana, C. Giesen, M. Heuken, ''Stimulated emission via electron-hole plasma recombination in fully strained single InGaN/GaN heterostructures'', Appl. Phys. Lett. 109, 221106 (2016); doi: http://dx.doi.org/10.1063/1.4968799.
  • G. Bárcena-González, MP. Guerrero-Lebrero, E. Guerrero, D. Fernández-Reyes, D. González, A. Mayoral, AD. Utrilla, JM Ulloa, PL Galindo, ''Strain mapping accuracy improvement using super-resolution techniques'', J Microsc. 262(1):50-8 (2016). doi: 10.1111/jmi.12341. Epub 2015 Oct 26..
  • E. Alarcon-Llado, T. Brazzini, J. W Ager, ''Surface origin and control of resonance Raman scattering and surface band gap in indium nitride'', Journal of Physics D: Applied Physics, 49, 25 (2016).
  • Z. Gao, M. F. Romero, M. A. Pampillón, E. San Andrés, F. Calle, ''Thermal assessment of AlGaN/GaN MOSHEMTs on Si substrate using Gd2 O3 as gate dielectric'', IEEE Transactions on Electron Devices, 63, 7, 2729-2734 (2016). doi: 10.1109/TED.2016.2564301 .
  • X. Kong, H. Li, S. Albert, A. Bengoechea-Encabo, MA Sanchez-Garcia, E. Calleja, C.Draxl, A. Trampert, ''Titanium induced polarity inversion in ordered (In,Ga)N/GaN nanocolumns'', Physical Review B, 93, 12, 125436 (2016), doi: 10.1103/PhysRevB.93.125436.
  • M.Susano, M.P Proenca, S. Moraes, C.T Sousa, J. P. Araujo, ''Tuning the magnetic properties of multisegmented Ni/Cu electrodeposited nanowires with controllable Ni lengths'', Nanotechnology, 27,33 (2016).
  • P. Perna, F. Ajejas, D. Maccariello, J. L. Cuñado, R. Guerrero., M. A. Niño, M. Muñoz, J. L. Prieto, R. Miranda, J. Camarero, ''Two-dimensional chiral asymmetry in unidirectional magnetic anisotropy structures'', AIP Advances 6, 055819 (2016), doi: http://dx.doi.org/10.1063/1.4944345.
  • J. Zazo,S.Valcarcel Macua,S. Zazo, M. Pérez, I. Pérez-Álvarez, E. Jiménez, L. Cardona, J. Hernández, E. Quevedo., ''Underwater Electromagnetic Sensor Networks, Part II: Localization and Network Simulations'', Sensors 2016, 16(12),(2016); doi:10.3390/s16122176.
  • Y. Nieda, M. Suzuki, A. Nakamura, J. Temmyo, G. Tabares, A.Kurtz, M. Lopez, J.M Ulloa, A. Hierro, E. Muñoz, ''Wurtzite Zn1-y(MgxCd1-x)yO quaternary systems for photodiodes in visible spectral range'', Journal of Crystal Growth, 449, 27-34 (2016). http://dx.doi.org/10.1016/j.jcrysgro.2016.05.032.
  • A. Hierro, G. Tabares, M. Lopez-Ponce, J. M. Ulloa, A. Kurtz, E. Muñoz, V. Marín-Borrás, V. Muñoz -Sanjose, J. M. Chauveau , ''ZnMgO-based UV photodiodes: a comparison of films grown by spray pyrolysis and MBE'', Proc. SPIE 9749, Oxide-based Materials and Devices VII, 97490W (15 March 2016); doi: 10.1117/12.2213697.
Year 2015
  • J. Perkins, G. M. Foster, M. Myer, S. Mehra, J. M. Chauveau, A. Hierro, A. Redondo-Cubero, W. Windl, L. J. Brillson, '' Impact of Mg content on native point defects in MgxZn1-xO (0 ≤ x ≤ 0.56)'', APL Materials 3, 062801, 6 pg (2015).
  • C.A. Barrios, V. Canalejas-Tejero, S. Herranz, J. Urraca, M.C Moreno-Bondi, M. Avella-Oliver; Á.. Maquieira, R.Puchades, ''Aluminum nanoholes for optical biosensing'', Biosensors, 5, pp. 417-431, (2015). ISSN 0265-928X.
  • E. Chernysheva, Z. Gacevic, N. García -Lepetit, H. P. Van Der Meulen, M. Müller, F. Bertram, P. Veit, A. Torres-Pardo, J. M. González Calbet, J. Christen, ''Blue-to-green single photons from InGaN/GaN dot-in-a-nanowire ordered arrays'', EPL (Europhysics Letters), volume 111, issue 2, article id. 24001 (2015).
  • M. Pérez, R. Ranchal, I. De Mendizábal Vázquez, P. Cobos, C. Aroca, ''Combined alternating gradient force magnetometer and susceptometer system'', Rev. Sci. Instrum. 86, 015110 (2015); http://dx.doi.org/10.1063/1.4905686 .
  • C.A. Barrios, V. Canalejas-Tejero, ''Compact discs as versatile cost-effective substrates for releasable nanopatterned aluminium films'', Nanoscale. 7, pp. 3435- 3439, (2015). ISSN 2040-3364.
  • S. Albert, A. Bengoechea-Encabo, M.A. Sánchez-García, E. Calleja, ''Correlation between growth conditions, morphology and optical properties of nanocolumnar InGaN/GaN heterostructures selectively grown by molecular beam epitaxy'', Crystal Growth&Design. 15 (6), pp 2661-2666 doi: 10.1021/cg501798j, (2015).
  • M. Abuín, Z. Turgut, N. Aronhime, V. Keylin, A. Leary, V. DeGeorge, J. Horwath, S.L. Semiatin, D.E. Laughlin, M.E. McHenry, ''Determination of Pressure Effects on the alpha-gamma Phase Transition and Size of Fe in Nd-Fe-B Spring Exchange Magnets'', Metallurgical and Materials Transactions A, 46A, 11 (2015) .
  • S. Lazic, E. Chernysheva, Z.Gacevic, H. P. van der Meulen, E. Calleja, J. M. Calleja Pardo, ''Dynamic control of optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves'', AIP Advances 5, 097217 (2015); http://dx.doi.org/10.1063/1.4932147.
  • H T. Nguyen, TB. Smith, RS. Hoy, N Ch. Karayiannis, ''Effect of chain stiffness on the competition between crystallization and glass-formation in model unentangled polymers '', J. Chem. Phys. 143, 144901 (2015); http://dx.doi.org/10.1063/1.4932193 .
  • D. F. Reyes, J. M. Ulloa, A. Guzman, A. Hierro, D.L. Sales, R. Beanland, A.M. Sanchez, D. Gonzalez, ''Effect of the annealing on the Sb and In distribution of type II GaAsSbcapped InAs quantum dots'', Semiconductor Science and Technology 30, 114006 (9 pp.) (2015).
  • P D. Soto Rodríguez, V. Calderón, P. Aseev, VJ. Gómez, P.Kumar. NH.Alvi, A. Sánchez, R. Villalonga, JM. Pingarrón, R.Notzel, ''Electrocatalytic oxidation enhancement at the surface of InGaN films and nanostructures grown directly on Si(111)'', Electrochemistry Communications, Vol. 60, 158-162 (2015).
  • M. Niehle, A. Trampert, S. Albert, A. Bengoechea-Encabo, E. Calleja, ''Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (11_22)GaN templates'', APL Materials 3, 036102 (2015). doi: 10.1063/1.4914102.
  • P.Y. Bokov, T. Brazzini, M. F. Romero, F. Calle, M. Feneberg, R. Goldhahn, ''Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures'', Semicond. Sci. Technol. 30, 085014 (2015), doi:10.1088/0268-1242/30/8/085014 (6pp) .
  • S. Albert, A. Bengoechea-Encabo, J. Ledig, T. Schimpke, M.A Sánchez-García, M. Strassburg, A. Waag, E. Calleja, ''First demonstration of InGaN/GaN core-shell micro LEDs grown by molecular beam '', Crystal Growth&Design, 15 (8), pp 3661-3665, (2015). DOI: 10.1021/acs.cgd.5b00235 .
  • Z.Gacevic, D. Gómez Sánchez, E. Calleja, ''Formation mechanisms of GaN nanowires grown by selective area growth epitaxy'', Nanoletters 15, 2, 1117 (2015). doi: 10.1021/nl504099s .
  • S. Ruiz-Gómez, A. Boscá, L. Pérez, J. Pedrós, J. Martínez, A. Páez, F. Calle, ''Graphene foam functionalized with electrodeposited nickel hydroxide for energy applications'', Diamond and Related Materials 57, 63-67 (2015), doi:10.1016/j.diamond.2015.03.003.
  • N. Ul Hassan Alvi, P. E. D. Soto Rodríguez, P. Aseev, V. J. Gómez, A. Ul Hassan Alvi, W. Ul Hassan, M. Willander, R. Nötzel, ''InN/InGaN quantum dot photoelectrode: Efficient hydrogen generation by water splitting at zero voltage'', Nano Energy (2015) 13, 291-297.
  • E. Ramos, C.López, J.Akerman, M. Muñoz, JL. Prieto, ''Joule heating in ferromagnetic nanostripes with a notch'', Phys. Rev. B 91, 214404 (2015).
  • Z. Gacevic, A. Bengoechea-Encabo, S. Albert, A. Torres-Pardo, E. Calleja, ''Journal of Applied Physics, 117, 035301 (2015). DOI: 10.1063/1.4905951.'', Journal of Applied Physics, 117, 035301 (2015). DOI: 10.1063/1.4905951 .
  • X. Kong, S. Albert, A. Bengoechea-Encabo, M.A. Sánchez-García, E. Calleja, A. Trampert, ''Lattice pulling effect and strain relaxation in axial (In,Ga)N/GaN nanowire heterostructures grown on GaN-buffered Si(111) substrate'', Soft Matter, 11(9) 1688-1700 DOI: 10.1039/C4SM02707H (2015).
  • G. Tabares, A. Hierro, M. López-Ponce, E. Muñoz, B. Vinter, J.-M. Chauveau, ''Light polarization sensitive photodetectors with m- and r-plane homoepitaxial ZnO/ZnMgO quantum wells'', Applied Physics Letters 106, 061114 (2015); doi: 10.1063/1.4908183. http://dx.doi.org/10.1063/1.4908183.
  • M. Díaz-Michelena, P. Cobos, C. Aroca, ''Lock-in amplifiers for AMR sensors'', Sensors and Actuators A, 222,149-159 (2015) .
  • R.Ranchal, S.Fin, D.Bisero, ''Magnetic microstructures in electrodeposited Fe1-xGaxthin films (15≤ x ≤ 22 at.%)'', J. Phys. D: Appl. Phys. 48 (2015) 075001 (5pp). doi:10.1088/0022-3727/48/7/075001.
  • A. Boscá, J. Pedrós, J. Martínez, F. Calle, ''Method for extracting relevant electrical parameters from graphene field-effect transistors using a physical model. '', Journal of Applied Physics, 117, 044504 (2015); doi: 10.1063/1.4906972. http://scitation.aip.org/content/aip/journal/jap/117/4/10.1063/1.4906972.
  • N. Ch. Karayiannis, K. Foteinopoulou, M. Laso, ''Monte Carlo simulations of densely-packed athermal polymers in the bulk and under confinement'', Chemical Engineering Science, 121, 118-132 (2015).
  • L. Martín-García, S. Ruíz-Gómez, M. Abuín, Y. Montaña, N. Carmona, L. Pérez. , ''Multifunctional core-shell Co-SiO2 nanowires via electrodeposition and sol-gel. '', RSC Adv. 5, 97503-97507 (2015) .
  • G. M. Foster, J. Perkins, M. Myer, S. Mehra, J. M. Chauveau, A. Hierro, A. Redondo-Cubero, W. Windl, L. J. Brillson, ''Native point defect energies, densities, and electrostatic repulsion across (Mg, Zn)O alloys'', Physica Status Solidi A-Applications and Materials Science 212, 1448-1454 (2015).
  • P. Aseev, P.E.D. Soto Rodríguez, V.J. Gómez, N. Ul Hassan Alvi, J.M. Manuel, F.M. Morales, J.J. Jimenez, R. García, A. Senichev, C. Lienau, E. Calleja and R. Nötzel, ''Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range'', Applied Physics Letters 106, 072102 (2015).
  • M. López-Ponce, A. Hierro, V. Marín-Borrás, G. Tabares, A. Kurtz, S. Albert, S. Agouram, V. Muñoz-Sanjosé, E. Muñoz, J.M. Ulloa, ''Optical properties of ZnMgO films grown by Spray Pyrolysis and their application to UV photodetection'', Semiconductor Science and Technology 30, 105026 (2015).
  • S. Lazic, E. Chernysheva, Z. Gacevic, N. Garcia-Lepetit, H.P. Van Der Meulen, M. Muller, F. Bertram, P. Veit, J. Christen, A. Torres-Pardo, J.M. Gonzalez Calbet, E. Calleja, J.M. Calleja,, ''Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters'', Proc. SPIE Vol. 9363, Gallium Nitride Materials and Devices X, 93630U (2015). Ed. by Jen-Inn Chyi, Hiroshi Fujioka, and Hadis Morkoc. doi: 10.1117/12.2074898.
  • A.Pérez, G.F. Iriarte, J. Hernando-García, F. Calle , ''Post-CMOS compatible high-throughput fabrication of AIN-based piezoelectric microcantilevers'', J. Micromech. Microeng. 25,025003 (11pp) 2015. .
  • A. Guzman, K. Yamamoto, J.M. Ulloa, J.M. Llorens, A. Hierro, ''Role of the wetting layer in the enhanced responsivity of InAs/GaAsSb quantum dot infrared photodetectors'', Applied Physics Letters 107, 011101 (2015).
  • S. Albert, A. Bengoechea-Encabo, D. López-Romero, P. De Mierry, J. Zúñiga-Pérez, X. Kong, A. Trampert, M.A Sánchez-García., E. Calleja, ''Selective area growth of III-nitride nanorods on polar, semi-polar, and non-polar orientations: device applications'', Proc. SPIE Vol. 9370, Quantum Sensing and Nanophotonic Devices XII, 937017 (2015). Ed. by Manijeh Razeghi, Eric Tournie, and Gail J. Brown. doi: 10.1117/12.2085079. .
  • A. Wang, S. Martín-Horcajo, M.J. Tadjer, F. Calle , ''Simulation of temperature and electric field effects of barrier traps in AlGaN/GaN HEMTs'', Semicond Sci. Technol. 30, 015010 -8pp (2015).
  • J. L. Mesa, M. Díaz-Michelena, D. Ciudad, Whitney Schoenthal, M. E. Mchenry, M. Maicas, C. Aroca, ''Single Point Gradiometer for Planetary Applications'', IEEE Magnetics Letters, vol. 6, 6500104 (2015).
  • A.D. Utrilla, J.M. Ulloa, Z. Gacevic, D.F. Reyes, D. Gonzáalez, T. Ben, A. Guzmáan, A. Hierro, ''Stacked GaAs (Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell efficiency'', Proc. of SPIE, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV, Vol. 9358, 93580J (2015).
  • P E. D. Soto Rodríguez, P. Aseev, V. J. Gómez, P. Kumar, N. Ul Hassan Alvi, E. Calleja, J.M. Manuel, F. M. Morales, J.J. Jiménez, R. García, A. Senichev, Ch. Lienau, R. Nötzel , ''Stranski-Krastanov InN/InGaN Quantum Dots Grown directly on Si(111)'', Applied Physics Letters 106, 023105 (2015). http://scitation.aip.org/content/aip/journal/apl/106/2/10.1063/1.4905662.
  • A. Prados, R. Ranchal, L. Pérez, ''Strategies to unblock the n-GaAs surface when electrodepositing Bi from acidic solutions '', Electrochimica Acta 174, 264-272 (2015).
  • N.Ch. Karayiannis, K.Foteinopoulou, M. Laso , ''The role of bond tangency and bond gaps in hard sphere crystallization of chains'', Soft Matter, 2015, Advance Article. Blog of Soft Matter: http://blogs.rsc.org/sm/. Link to article: http://pubs.rsc.org/en/Content/ArticleLanding/2015/SM/C4SM02707H#!divAbstract.
  • S. Martín-Horcajo, A. Wang, A. Boscá, M.F. Romero, M.J. Tadjer, A. Koehler, T. Anderson, F. Calle, ''Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries'', Semiconductor Science and Technology, Vol. 30, Number 3 (2015).
  • J.M. Llorens, L. Wewior,E.R. Cardozo De Oliveira, J.M. Ulloa, A.D. Utrilla, A. Guzman, A. Hierro, B. Alen, ''Type II InAs/GaAsSb quantum dots: highly tunable exciton geometry and topology'', Applied Physics Letters 107, 183101 (4 pp.) (2015).
Year 2014
  • C.H. Wu, N.Ch. Karayiannis, M. Laso, D.Qu, Q.Luo, J. Shen, ''A metric to gauge local distortion in metallic glasses and supercooled liquids'', Acta Materialia 71, 229 (2014).
  • A. Kurtz, A. Hierro, E. Muñoz, S. K. Mohanta, A. Nakamura, J. Temmyo, ''Acceptor levels in ZnMgO:N probed by deep level optical spectroscopy'', Applied Physics Letters 104, 081105/1-081105/5 (2014).
  • S. Albert, A. Bengoechea-Encabo, F. Barbagini, D.López-Rormero, M. Sánchez-García, E. Calleja, ''Advances in MBE Selective Area Growth of III-Nitride Nanostructures: From NanoLEDs to Pseudo Substrates'', Proc. WOFE Conf. Editors: Sorin Cristoloveanu and Michael Shur. International Journal of High Speed Electronics and Systems, Vol. 23, Nos. 3 & 4 (2014) 1450020. doi: 10.1142/S0129156414500207.
  • C.A. Barrios, V. Canalejas-Tejero, S. Herranz, M.C. Moreno-Bondi, M. Avella-Oliver, R. Puchades, A. Maquieira, ''Aluminum nanohole arrays fabricated on polycarbonate for compact disc -based label-free optical biosensing'', Plasmonics (2014). DOI: 10.1007/s11468-014-9676-5.
  • T. Brazzini, S. Martín-Horcajo, F. Romero, Z. Gacevic, F. Calle , ''Analysis of InAl(Ga)N/GaN wet-etching by structural, morphological and electrical methods '', Semicond. Sci. Technol. 29, 075003 -7pp (2014), doi:10.1088/0268-1242/29/7/075003. .
  • A. Prados, R. Ranchal, L. Pérez , ''Blocking effect in the electrodeposion of Bi on n-GaAs in acidic electrolytes'', Electrochim. Acta 143, 23 (2014) .
  • J.M. Ulloa, D. F. Reyes, A. D. Utrilla, A. Guzmán, A. Hierro, T. Ben, D. González, ''Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots'', Journal of Applied Physics 116, 134301/1-7 (2014).
  • S. Carrasco, V. Canalejas-Tejero, F. Navarro-Villoslada, C.A. Barrios, M.C. Moreno-Bondi, ''Cross-linkable linear copolymer with double functionality: resist for electron beam nanolithography and molecular imprinting'', J. Mater. Chem. C (2014). DOI: 10.1039/C3TC31499E..
  • G. Mutta, T. Brazzini, L. Mechin, J.-M. Routoure, B. Guillet, J.-L. Doulan, J. Grandal, M.C. Sabido, F. Calle, P. Ruterana, ''Electrical contacts of InN-based optoelectronic devices'', Semicond. Sci. Technol. 29, 095010 -8pp (2014), doi:10.1088/0268-1242/29/9/095010. .
  • A. D. Utrilla, D. F. Reyes, J. M. Ulloa, D. González, T. Ben, A. Guzman, A. Hierro, , ''GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics'', Applied Physics Letters 105, 043105/1-4 (2014).
  • R. Ranchal, D. Maestre , ''Growth and characterization of Fe1-xGax thin films from citrate-based electrolytes'', J. Phys. D: Appl.Phys, 47, 355004 (2014) .
  • S. Albert, A.Bengoechea-Encabo, M.Sabido-Siller, Müller, G.Schmidt, S. Metzner, P.Veit, F.Bertram, M.A. Sánchez-García, J.Christen, E.Calleja, ''Growth of InGaN/GaN core-shell structures on selectively etched GaN rods by molecular beam epitaxy'', Journal of Crystal Growth 392, 5-10 (2014).
  • D. F. Grossi, P. Smereka, J. G. Keizer, J. M. Ulloa,P. M. Koenraad, ''Height control of self-assembled quantum dots by strain engineering during capping'', Appl. Phys. Lett. 105, 143104 (2014).
  • S. Martín-Horcajo, A. Wang, M.F. Romero, M.J. Tadjer, A. Koehler, T. Anderson, F. Calle , ''Impact of device geometry at different ambient temperatures on the self-heating of GaN-based HEMTs'', Semicond Sci. Technol. 29, 115013 (2014) .
  • J. G. Keizer, J. M. Ulloa, A. D. Utrilla, P. M. Koenraad, ''InAs quantum dot morphology after capping with In, N, Sb alloyed thin films'', Appl. Phys. Lett. 104, 053116 (2014).
  • A Redondo-Cubero, L Vazquez, L C Alves, V Corregidor, M F Romero, A Pantellini, C Lanzieri, , E. Muñoz , ''Influence of lateral and in- depth metal segregation on the patterning of ohmic contacts for GaN-based devices'', J. Phys. D: Appl. Phys. 47, 185302 (2014).
  • E. Luna, J. Grandal, E. Gallardo, J.M. Calleja, M.A. Sánchez-García, E. Calleja, A. Trampert,, ''Investigation of III-V nanowires by plan-view transmission electron microscopy: InN case study'', Microscopy and Microanalysis, 1-8 (2014). doi: 10.1017/S1431927614013038.
  • S. Albert, A. Bengoechea-Encabo, D. López-Romero, F. Barbagini, M.A. Sánchez-Garcí E. Calleja, ''Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range'', Nanotechnology 25, 435203 (2014).
  • A Bengoechea-Encabo, S Albert, D Lopez-Romero, P Lefebvre, F Barbagini, A Torres-Pardo, J M Gonzalez-Calbet, M.A. Sanchez-Garcia, E Calleja, ''Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range'', Nanotechnology 25, 435203 (2014).
  • A. D. Utrilla, J. M. Ulloa, A. Guzman, A. Hierro, ''Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer'', Nanoscale Research Letters 9, 36 (2014).
  • A. Lara, O. V. Dobrovolskiy, J. L. Prieto, M. Huth, F. G. Aliev, ''Magnetization reversal assisted by half antivortex states in nanostructured circular cobalt disks circular cobalt disks'', Appl. Phys. Lett. 105, 182402 (2014).
  • C. Hahn, V. V. Naletov, G. De Loubens, O. Klein, O. D allivy Kelly, A. Anane, R. Bernard, E. Jacquet, P. Bortolotti, V. Cros, J. L. Prieto, M. Muñoz , ''Measurement of the intrinsic damping constant in individual nanodisks of Y3Fe5O12 and Y3Fe5O12|Pt'', Appl. Phys. Lett. 104, 152410 (2014).
  • M.J. Tadjer, M.A. Mastro, J.M. Rojo, A. Boscá, F. Calle, F. Kub, C.R. Eddy, Jr. , ''MnO2-based electrochemical supercapacitors on flexible carbon substrates'', J. Electron. Mat. 43, 1188-1193 (2014), doi: 10.1007/s11664-014-3047-z. .
  • J.L. Urraca, C.A. Barrios, V. Canalejas-Tejero, G. Orellana, M.C. Moreno-Bondi, ''Molecular recognition with nanostructures fabricated by photopolymerization within metallic subwavelength apertures'', Nanoscale, 6, 8656-8663 (2014).
  • J.L. Urraca, M. Castellari, C.A. Barrios, M.C. Moreno-Bondi, ''Multiresidue analysis of fluoroquinolone antimicrobials in chicken meat by molecularly imprinted solid-phase extraction and high performance liquid chromatography'', Journal of Chromatography A, 1343, 1-9 (2014).
  • C.A. Barrios et al., ''Nanosensors on CDs simplify biosample study'', Photonics Spectra, June 2014, pg 24,26: view on line: http://www.photonicsspectra-digital.com/photonicsspectra/june_2014#pg1, more information: http://www.isom.upm.es/noticias.php.
  • V. Canalejas-Tejero, S. Herranz, A. Bellingham, M.C. Moreno-Bondi, C.A. Barrios, ''Passivated aluminum nanohole arrays for label-free biosensing applications'', ACS Appl. Mater. Interfaces, 6, 1005-1010 (2014).
  • N. H. Alvi, P. E. D. Soto Rodríguez, P. Kumar, V. J. Gómez, P. Aseev, A. H. Alvi, M. A. Alvi, M. Willander, R. Nötzel, ''Photoelectrochemical water splitting and hydrogen generation by a spontaneously formed InGaN nanowall network'', Applied Physics Letters 104, 223104 (2014); doi: 10.1063/1.4881324.
  • M J Milla, J M Ulloa, A Guzman, ''Photoexcited-induced sensitivity of InGaAs surface QDs to environment'', Nanotechnology 25, 445501 (2014).
  • D. Cucak, M. Vasic, O. Garcia, Y. Bouvier, J. Oliver, P. Alou, J.A. Cobos, A. Wang, S. Martin-Horcajo, F. Romero, F. Calle, ''Physical Model for GaN HEMT Design Optimization in High Frequency Switching Applications'', Solid State Device Research Conference (ESSDERC), p. 393 (2014).
  • A.Pérez Campos, G.F. Iriarte, V. Lebedev, F. Calle, ''PostCMOS compatible sacrificial layers for aluminum nitride microcantilevers'', Journal of micro/nanolithography, MEMS and MOEMS 13, 4, 043012, 8 pp (2014).
  • M.A. Sánchez-García, E. Calleja, ''Selective Area Growth (chapter in Nucleation and growth mechanisms of GaN and ZnO nanowires)'', ISTE Wiley, Hermes Sc ience Publishing, eds. V. Consonni, G. Feuillet (2014).
  • S. Albert, A. Bengoechea-Encabo, J. Zúñiga-Pérez, M.A. Sánchez-García, E. Calleja, ''Selective area growth of GaN nanostructures for the fabrication of high quality (11-22) a-plane pseudo-substrates'', Applied Physics Letters 105, 091902 (2014).
  • J. Akerman, M. Muñoz, M. Maicas, J.L. Prieto, ''Selective injection of magnetic domain walls in Permalloy nanostripes'', J. Appl. Phys. 115, 183909 (2014).
  • B. Dev Choudhury, R. Casquel, M.J. Bañuls, F.J. Sanza, M.F. Laguna, M. Holgado, R. Puchades, A. Maquieira, C.A. Barrios, S. Anand, ''Silicon nanopillar arrays with SiO2 overlayer for biosensing application'', Optical Materials Express, 4, 1345-1354 (2014).
  • M. J. Milla, J. M. Ulloa, A. Guzman, ''Strong Influence of the Humidity on the Electrical Properties of InGaAs Surface Quantum Dots'', Appl. Mater. Interfaces 6, 6191 (2014).
  • W. Schoenthal, X. Liu, T. Cox, J. L. Mesa, M. Maicas, M. Diaz-Michelena, D. E. Laughlin, M. E. Mchenry, ''Synthesis and magnetic properties of single phase titanomagnetites'', J. Appl. Phys. 115, 17A934 (2014).
  • R. Ranchal, S. Fin, D. Bisero, C. Aroca et al., ''Tailoring the magnetic anisotropy and domain patterns of sputtered TbFeGa alloys'', Journal of Alloys and Compounds, 582, 839-843 (2014) .
  • M.J. Tadjer, K.D. Hobart, T.J. Anderson, T.I. Feygelson, R.L. Myers-Ward, A.D. Koehler, F. Calle, C.R. Eddy, Jr., D.K. Gaskill, B.B. Pate, F.J. Kub , ''Thermionic-field heterojunctions between epitaxial nanocrystalline diamond and 4H-SiC'', IEEE Electron. Dev. Lett. 35, 1173 (2014).
  • M. Abuín, L.Pérez, A. Mascaraque, M. Maicas , ''Tuning the magnetic properties of FeCo by pulsed DC magnetron sputtering'', CrystEngComm 16, 9528 (2014).
  • N. Ch. Karayiannis, K. Foteinopoulou, M. Laso, ''Twinning of Polymer Crystals Suppressed by Entropy'', Symmetry 6, 758 (2014).
  • M.López-Ponce, A.Nakamura, M.Suzuki, J.Temmyo, S. Agouram,MC. Martínez-Tomás, V. Muñoz-Sanjosé, P. Lefebvre, JM. Ulloa, E.Muñoz, A. Hierro, ''VIS-UV ZnCdO/ZnO multiple quantum well nanowires and the quantification of Cd diffusion'', Nanotechnology 25 (2014) 255202 (6pp); doi:10.1088/0957-4484/25/25/255202.
  • A.Gómez, J Del Valle, E. M Gonzalez, C. E Chiliotte, S. J Carreira, V. Bekeris, JL. Prieto, IK Schuller, J L Vicent, ''Vortex pinning vs superconducting wire network: origin of periodic oscillations induced by applied magnetic'', Supercond. Sci. Technol. 27, 065017 (2014).
Year 2013
  • Z. Gacevic, V.J. Gomez, N.Garcia Lepetit, P.E.D. Soto Rodriguez, A. Bengoechea, S. Fernandez-Garrido, R. Notzel, E. Calleja, ''A comprehensive diagram to grow metal-polarity InGaN alloys by molecular beam epitaxy'', Journal of Crystal Growth, volume 364, Pages 123-127 (2013).
  • N. H. Alvi, V. J. Gómez, P.E.D. Soto Rodríguez, P.Kumar, S. Zaman, M.Willander, R.Nötzel , ''An InN/InGaN Quantum Dot Electrochemical Biosensor for Clinical Diagnosis'', Sensors 2013, 13, 13917-13927 (2013); doi:10.3390/s131013917.
  • M. Feneberg, M.F. Romero, M. Roppischer, C. Cobet, N. Esser, B. Neuschl, K. Thonke, M. Bickermann, R. Goldhahn, ''Anisotropic absorption and emission of bulk (1-100) AlN'', Physical Review B, Vol. 87, 235209 (9 pp) .
  • D. Cucak, M. Vasic, O. Garcia, J. Oliver, P. Alou, J. A. Cobos, M. Tadjer, F. Calle, F. Benkhelifa, R. Reiner, P. Waltereit, S. Muller, ''Application of GaN FET in 1MHz Large Signal Bandwidth Power Supply for Radio Frequency Power Amplifier'', IEEE Applied Power Electronics Conference (APEC Digest), 664-671 (2013).
  • S.J. Leigh, J.L. Prieto, J. Bowen, S. Lewis, A.P.G. Robinson, P. Iqbal, J.A. Preece, ''Controlling gold nanoparticle assembly on electron beam-reduced nitrophenyl self-assembled monolayers via electron dose. '', Colloids and Surfaces A- Physicochemical and Engineering Aspects, 433, 181 (2013).
  • J. Schiefele, J. Pedrós, F. Sols, F. Calle, F. Guinea, ''Coupling light into graphene plasmons with the help of surface acoustic waves. '', Physical Review Letters, 111, 237405-1-237405-4 (2013).
  • JY. Yuan, CY. Jin, M. Skacel, A. Urbanczyk, T.Xia, PJ. Van Veldhoven, R. Nötzel, ''Coupling of InAs/InP quantum dots to the plasmon resonance of In nanoparticles grown by metal-organic vapor phase epitaxy'', Applied Physics Letters, 102, 19, 191111 (2013). DOI: 10.1063/1.4805043.
  • A. B. Fernandez, M.E.McHenry, M. Diaz-Michelena, C. Aroca, M. Maicas, ''Database of Extraterrestrial Magnetic Minerals, Test and Magnetic Simulation '', IEEE Transactions on magnetics, 49, 7, 3533-3536 (2013) .
  • MJ. Milla, JM. Ulloa. A. Guzman, ''Dependence of Surface InGaAs Quantum Dot Luminescence on the Molecular Properties of the Environment'', Applied Physics Express 6 (2013) 092002. http://dx.doi.org/10.7567/APEX.6.092002.
  • F.J. Ortega, M.J Bañuls, F.J Sanza, MF. Laguna, M. Holgado, R.Casquel, C.A. Barrios, D. López-Romero, A. Maquieira, R. Puchades, ''Development of a versatile biotinylated material based on SU-8'', J. Mater. Chem. B, 1, 2750 (2013).
  • F. Lloret, D. Araújo, M.P. Villar, J.G. Rodríguez-Madrid, G.F. Iriarte, O.A. Williams, F. Calle, ''Diamond underlayer microstructure effect on the orientation of AlN piezoelectric layers for high frequency SAW resonators by TEM'', Microelectronic Engineering, 112, 193-197 (2013), with the DOI: 10.1016/j.mee.2013.04.007.
  • L. García-Gancedo, J.Pedrós, E. Iborra, M. Clement, X.B. Zhao, J. Olivares, J. Capilla, J.K. Luo, J.R. Lu, W.I. Milne, A.J. Flewitt, ''Direct comparison of the gravimetric responsivities of ZnO-based FBARs and SMRs.'', Sensors and Actuators B. 183,136-143. (Switzerland): Elsevier, 05/07/2013. ISSN 0925-4005 (2013).
  • A. Sasikumar, A. R. Arehart, S. Martin-Horcajo, M. F. Romero, Y. Pei, D. Brown, F. Recht, M. A. di Forte-Poisson, F. Calle, M. J. Tadjer, S. Keller, S. P. DenBaars, U. K. Mishra, S. A. Ringel, ''Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy'', Applied Physic Letters, 103, 3, 033509 - 033509-4 (2013).
  • P. Kumar, P. E. D. Soto Rodríguez, V.J. Gómez, N. H. Alvi, E.Calleja, R. Nötzel, ''Direct growth of indium-rich InGaN on silicon'', Semiconductor Today, Vol. 8, Issue 3, April/May 2013, page 82 (2013).
  • A. Redondo-Cubero, M.D. Ynsa, M.F. Romero, L.C. Alves, E. Muñoz , ''Effect of rapid thermal annealing on the composition of Au/Ti/Al/Ti ohmic contacts for GaN-based microdevices'', Nuclear Instruments and Methods in Physics Research B 306, 212-217 (2013).
  • I.Lorite, L. Pérez, J. J. Romero, J. F. Fernández, ''Effect of the dry nanodispersion procedure in the magnetic order of the Co3O4 surface'', Ceramics International 39, 4377-4381 (2013).
  • S.K. Mohanta, A. Nakamura, G. Tabares, A. Hierro, A. Guzmán, E. Muñoz, J. Temmyo, ''Electrical characterization of Schottky contacts to n-MgZnO films'', Thin Solid Films, 548, 539-545 (2013).
  • A.Llavona, A. Prados, V. Velasco, P. Crespo, M. C. Sánchez, L. Pérez , ''Electrochemical synthesis and magnetic properties of goethite single crystal nanowires'', CrystEngComm, 15, 4905 (2013).
  • P. Kumar , P. E. D. Soto Rodríguez, V.J. Gómez, N. H. Alvi, E.Calleja, R. Nötzel , ''Eliminating the buffer between InGaN and Si'', Compound Semiconductor magazine on page 61. View on line: http://www.compoundsemiconductor.net/csc/adminpanel/uploads/magazine_images/CSApril_May2013.pdf. (2013).
  • M. Romera, J. Grollier, S.Collin, T. Devolder, V. Cros, M. Muñoz, JL Prieto, ''Enhanced stability in spin transfer nanopillars due to a Fe/Gd/Fe trilayer'', Appl. Phys. Lett. 103, 122404 (2013); doi: 10.1063/1.4821510. View on line: http://dx.doi.org/10.1063/1.4821510 (5 pages).
  • A.Llavona, L. Pérez, M. C. Sánchez, V. de Manuel, ''Enhancement of anomalous codeposition in the synthesis of Fe-Nialloys in nanopores'', Electrochimica Acta, 106, 392-397 (2013).
  • R. Ranchal, B. S. Yadav, A. Trampert , ''Ferromagnetism at room temperature of c-and m-plane GaN:Gd films grown on different substrates by reactive molecular beam epitaxy'', J. Phys. D: Appl. Phys. 46, 075003 (2013) .
  • P. Kumar, P. E. D. Soto Rodríguez, V.J. Gómez, N. H. Alvi, E.Calleja, R. Nötzel, ''First Demonstration of Direct Growth of Planar High-In-Composition InGaN Layers on Si'', Appl. Phys. Express 6, 035501-4 pages (2013).
  • M. Mandl, X. Wang, T. Schimpke, C. Kolper, M. Binder, J. Ledig, A. Waag, X. Kong, A. Trampert, F. Bertram, J. Christen, F. Barbagini, E. Calleja, M. Strassburg, ''Group III nitride core-shell nano- and microrods for optoelectronic applications'', Phys. Stat. Solidi, Rapid Research Letters, 7, 10, Special Issue, 800 (2013).
  • V.J. Gómez, P. E. D. Soto Rodríguez, P.Aseev, E. Calleja, R. Noëtzel, ''High In Composition InGaN for InN Quantum Dot Intermediate Band Solar Cells'', Japanese Journal of Applied Physics 52, 08JH09 1-4 (2013). View on line: http://jjap.jsap.jp/link?JJAP/52/08JH09/.
  • J. G. Rodríguez-Madrid, G. F. Iriarte, O. A. Williams, F. Calle, ''High precision pressure sensors based on SAW devices in the GHz range'', Sensors and Actuators A.189,364-369 (2013) .
  • H. Alvi, V. J. Gómez, P.E.D. Soto Rodríguez, P.Kumar, M.Willander, R.Nötzel , ''Highly Sensitive and Fast Anion-Selective InN Quantum Dot Electrochemical Sensors'', Appl. Phys. Express 6, 115201 (2013).
  • T. Brazzini, S. Pandey, M.F. Romero, P.Y. Bokov, M. Feneberg, G. Tabares, A. Cavallini, R. Goldhahn, F. Calle, ''Impact of AlN spacer on metal-semiconductor-metal Pt-InAlGaN/GaN heterostructures for UV detection'', Jap. J. Applied Physics 52, 08JK04 (2013). View on line: http://dx.doi.org/10.7567/JJAP.52.08JK04.
  • A. Wang, M. J. Tadjer, T. J. Anderson, R. Baranyai, J. W. Pomeroy, T. I. Feygelson, K. D. Hobart, B. B. Pate, F. Calle, M. Kuball, ''Impact of intrinsic stress in diamond capping layers on the electrical behavior of AlGaN/GaN HEMTs'', IEEE Trans. Electron Devices, 60, 3149 (2013).
  • D. Utrilla, J. M. Ulloa, A. Guzmán, A. Hierro, ''Impact of the Sb content on the performance of GaAsSb-capped InAs/GaAs quantum dot lasers'', Applied Physics Letters 103, 111114/1-111114/4 (2013).
  • Z.Gacevic, A. Eljarrat, F. Peiró, E. Calleja,, ''Insight into high-reflectivity AlN/GaN Bragg reflectors with spontaneously formed (Al,Ga)N transient layers at the interfaces'', ournal of Applied Physics 113, 183106 (2013). http://dx.doi.org/10.1063/1.4805054.
  • A. Eljarrat, L. López-Conesa, C. Magén, Z. Gacevic, S. Fernández-Garrido, E. Calleja, S. Estradé, F. Peiró , ''Insight into the Compositional and Structural Nano Features of AlN/GaN DBRs by EELS-HAADF'', Microscopy & Microanalysis, 19, 698 (2013). doi:10.1017/S1431927613000512.
  • T. Brazzini, A. Bengoechea, M.A. Sánchez-García, F. Calle , ''Investigation of AlInN barrier ISFET structures with GaN capping for pH detection'', Sensors & Actuators: Chemical B 176, 704-707 (2013).
  • N.Ch. K.Arayiannis, K. Foteinopoulou, M. Laso, ''Jamming and Crystallization in Athermal Polymer Packings'', Philosophical Magazine 93, 4108 (2013).
  • A. Urbanczyk, JG. Keizer, PM. Koenraad, R. Nötzel , ''Long wavelength (> 1.55 mu m) room temperature emission and anomalous structural properties of InAs/GaAs quantum dots obtained by conversion of In nanocrystals'', Applied Physics Letters,102, 7, 073103 (2013). Doi: 10.1063/1.4792700 .
  • J. Pedrós, L. García-Gancedo, C.J.B. Ford, J.P. Griffiths, G.A.C. Jones, A.J. Flewitt., ''Low attenuation of GHz Rayleigh-like surface acoustic waves in ZnO/GaAs systems immersed in liquid helium.'', Applied Physics Letters. 102, 043507-1-043507-4 (2013). .
  • C. E. Chiliotte, S.J.Carreira, V.Bekeris, A.Góomez, E.M.González, J.L.Prieto, J.L. Vicent, ''Low Temperature Vortex Dynamics in Superconducting Nb Films Containing Square and Rectangular Arrays of Ni Nanodots'', IEEE Trans. Mag.,.49, 4643 (2013) .
  • S. Albert, A. Bengoechea-Encabo, M.A. Sánchez-García, E. Calleja, A. Trampert, ''Monolithic integration of blue, green, and red light emitting nanocolumnar structures for phosphor free white light emission'', Applied Physics Letters, 102, 181103 (2013). doi: 10.1063/1.4804.
  • PE. D. Soto Rodríguez, VJ. Gómez, P. Kumar, E.Calleja, R. Nötzel, ''Near-infrared InN quantum dots on high-In composition InGaN'', Appl. Phys. Lett. 102, 131909 (2013); doi: 10.1063/1.4800779. View online: http://dx.doi.org/10.1063/1.4800779.
  • M. Feneberg, M.F Romero, B .Neuschl, K. Thonke, M. Roppischer et al., ''Negative spin-exchange splitting in the exciton fine structure of AlN'', Appl. Phys. Lett. 102, 052112 (2013); doi: 10.1063/1.4790645.
  • M. Ghidini, R. Pellicelli, J. L. Prieto, X. Moya, J. Soussi, J. Briscoe, S. Dunn, N. D. Mathur , ''Non-volatile electrically driven repeatable magnetization reversal with no applied magnetic field'', Nature Communications 4:1421 doi: 10.1038/ncomms2398 (2013).
  • M. López-Ponce, A. Hierro, J. M. Ulloa, P. Lefebvre, E. Muñoz, et al., ''Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: Effect of thermal annealing'', Appl. Phys. Lett. 102, 143103 (2013); doi: 10.1063/1.4799491. View online: http://dx.doi.org/10.1063/1.4799491.
  • R. Ranchal, V. Gutierrez-Díaz, ''Perpendicular magnetic anisotropy in TbFeGa ternary alloys grown by cosputtering '', Thin Solid Films 534, 557 (2013) .
  • Z.Gacevic, G. Rossbach, R. Butté, F. Réveret, M. Glauser, J. Levrat, G. Cosendey, J.F. Carlin, N. Grandjean, E. Calleja, ''Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques'', Journal of Applied Physics, 114, 233102 (2013).
  • L.A. Rodríguez, C. Magen, E. Snoeck, C. Gatel, L. Marin, L. Serrano-Ramón, J.L. Prieto, M. Muñoz, P.A. Algarabel, L. Morellon, J.M. De Teresa, M.R. Ibarra, ''Quantitative in situ magnetization reversal studies in Lorentz microscopy and electron holography'', Ultramiscroscopy, 134, 144 (2013).
  • J.P. Morgan, J.Akerman,A.Stein, Ch. Phatak, R. M. L. Evans, S.Langridge, Ch.H. Marrows, ''Real and effective thermal equilibrium in artificial square spin ices'', Physical Review B87, 024405 (2013).
  • S. Albert, A. Bengoechea-Encabo, M.A. Sánchez-García, E. Calleja, U. Jahn, ''Selective area growth and characterization of InGaN nanocolumns for phosphor-free white light emission'', Journal of Applied Physics 113, 114306 (2013).
  • A. Bengoechea-Encabo, S. Albert, J. Zuñiga-Perez, A. Trampert, M.A. Sánchez-García, E. Calleja, ''Selective area growth and characterization of InGaN/GaN nanocolumns on semi-polar (11-22) GaN templates'', Applied Physics Letters 103, 241905 (2013).
  • S. Albert, A. Bengoechea-Encabo, M.A. Sánchez-García, E. Calleja, X Kong, A. Trampert, ''Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission'', Nanotechnology 24, 175303 (2013).
  • S. Fernández-Garrido, V. M. Kaganer, K.K. Sabelfeld, T. Gotschke, J.Grandal, E. Calleja, L. Geelhaar, O. Brandt, , ''Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy'', Nano Letters 13, 7, 3274 (2013) DOI: 10.1021/nl401483e.
  • S. Martín-Horcajo, A.Wang, M.F Romero, M.J Tadjer, F. Calle, ''Simple and Accurate Method to Estimate Channel Temperature and Thermal Resistance in AlGaN/GaN HEMTs'', IEEE Transactions on Electron Devices, 60,12 (2013).
  • R.S. Hoy, N.Ch. Karayiannis, ''Simple model for chain packing and crystallization of soft colloidal polymers'', Physical Review E 88, 012601 (2013).
  • A. Wang, M.J. Tadjer, F. Calle, ''Simulation of thermal management in AlGaN/GaN HEMTs with integrated diamond heat spreaders'', Semiconductor Science Technology, Semiconductor Science Technology, 28, 055010 (2013).
  • N.Ch. Karayiannis, K.Foteinopoulou, M.Laso, ''Spontaneous Crystallization in Athermal Polymer Packings'', International Journal Molecular Science 14, 332-358 (2013).
  • P. E. D. Soto Rodríguez, P. Kumar, V. J. Gómez, N. H. Alvi, J. M. Manuel, F. M. Morales, J. J. Jiménez, R. García, E. Calleja, R. Nötzel, ''Spontaneous formation of InGaN nanowall network directly on Si '', Appl. Phys. Lett. 102, 173105 (2013), View on line: http://dx.doi.org/10.1063/1.4803017 (3 pages).
  • T. Brazzini, M.J. Tadjer, Z.Gacevic, S.Pandey, A.Cavallini, F. Calle, ''Structural characterization of wet-etched quaternary InAlGaN barrier HEMT structure'', Semicond. Sci. Technol. 28 (2013) 055007 (6pp). View on line: http://iopscience.iop.org/0268-1242/28/5/055007/.
  • M.F. Romero, M. Feneberg, P. Moser, C. Berger, J. Blasing, A. Dadgar, A. Krost, E. Sakalauskas, F. Calle, R. Goldhahn, ''Systematic optical characterization of two-dimensional electron gases in InAlN/GaN-based heterostructures with different In content'', Jap. J. Applied Physics 52, 08JK02 (2013). view on line: http://dx.doi.org/10.7567/JJAP.52.08JK02..
  • V. Canalejas-Tejero, S. Carrasco, F. Navarro-Villoslada, J.L.García Fierro, MC. Capel-Sánchez, M.C Moreno-Bondi, C.A Barrios, ''Ultrasensitive non-chemically amplified low-contrast negative electron beam lithography resist with dual-tone behavior'', J. Mater. Chem. C, 1, 1392 (2013).
  • P. Aseev, P. E. D. Soto Rodríguez, P. Kumar, V.J. Gómez, N. H. Alvi, J. M. Manuel, F. M. Morales, J. J. Jiménez, R. García, E. Calleja, R. Nötzel, ''Uniform Low-to-High In Composition InGaN Layers Grown on Si'', Appl. Phys. Express 6, 115503 (2013).
Year 2012
  • J. M. Ulloa, J.M. Llorens, M. Del Moral, M. Bozkurt, P. M. Koenraad, A. Hierro, ''Analysis of the modified optical properties and band structure of GaAs1-xSbx-capped InAs/GaAs quantum dots'', Journal Applied Physics 112, 074311/1-074311/9 (2012).
  • F.J. Ortega, M-J. Bañuls, F.J. Sanza, R. Casquel, M.F. Laguna, M.Holgado, D. López-Romero, C.A. Barrios, Á . Maquieira and R. Puchades, ''Biomolecular Interaction Analysis of Gestrinone-anti-Gestrinone Using Arrays of High Aspect Ratio SU-8 Nanopillars'', Biosensors, vol. 2, pp.291-304, 2012..
  • E. Luna, A.Guzman, A.Trampert, G. Alvarez, ''Critical Role of Two-Dimensional Island-Mediated Growth on the Formation of Semiconductor Heterointerfaces'', Phis. Rev. Lett. 109, 126101 (2012).
  • E. Gur, G. Tabares, A. Arechart, J. M. Chauveau, A. Hierro, S. A. Ringel, ''Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy'', Journal Applied Physics 112, 123709/1-123709/7, 2012 .
  • J. Díaz, C. Quirós, L. M. Álvarez-Prado, C. Aroca, R. Ranchal, M. Ruffoni, S. Pascarelli., ''Determination of the magnetostrictive atomic environments in FeCoB alloys'', Phys. Rev. B 85, 134437 (2012).
  • Z. Budrikis, K.L. Livesey, J. P. Morgan, J. Akerman, A. Stein, S.Langridge, C.H Marrows, R.L Stamps, ''Domain dynamics and fluctuations in artificial square ice at finite temperatures'', New J. Phys. 14, 035014 (2012) view on line:doi:10.1088/1367-2630/14/3/035014.
  • F. Barbagini, A. Bengoechea-Encabo, S.Albert, P. Lefebvre, J. Martinez , M.A. Sanchez-Garcia, A. Trampert, E. Calleja , ''E-beam nano-patterning for the ordered growth of GaN/InGaN nanorods'', Microelectronic Engineering 98, 374-377 (2012).
  • T. J. Anderson, K. D. Hobart, L. O. Nyakiti, V. D. Wheeler, R. L. Myers-Ward, J. D. Caldwell, F. J. Bezares, D. K. Gaskill, C. R. Eddy, Jr, F. J. Kub, G. G. Jernigan, M. J. Tadjer, E. A. Imhoff, ''Electrical Characterization of the Graphene-SiC Heterojunction'', Materials Science Forum, 717-720, 641- 644, 2012 .
  • R. Nötzel, A. Urbanczyk, ''Epitaxial self-alignment: A new route to hybrid active plasmonic nanostructures'', Current Opinion in Solid State & Materials Science 16 (2), 59-63 (2012).
  • N. Karayiannis, R. Malshe, M. Kroger, J.J. de Pablo, M. Laso , ''Evolution of fivefold local symmetry during crystal nucleation and growth in dense hard-sphere packings'', Soft Matter 8, 844-858, 2012.
  • J. Martinez , F.Barbagini, A.Bengoechea-Encabo, S. Albert, M. A. Sanchez Garcia, E.Calleja, ''Fabrication of GaN nanorods by focused ion beam'', Microelectronic Engineering 98, 250-253 (2012).
  • C.A. Barrios, S. Carrasco, V. Canalejas-Tejero, D. López-Romero, F.Capel-Sánchez, ''Fabrication of luminescent nanostructures by electron-beam direct writing of PMMA resist,'', Materials Letters, vol 88, pp. 93-96, 2012..
  • G.F. Iriarte, J.G. Rodríguez-Madrid, F. Calle, ''Fabrication of sub-100 nm IDT SAW devices on insulating, semiconducting'', Journal of Materials Processing Technology, 212,3.707-712 (2012) http://dx.doi.org/10.1016/j.jmatprotec.2011.08.007.
  • M. Tadjer, A. Constant, P. Godignon, S. Martin- Horcajo, A. Bosca, F. Calle, M. Berthou, J. Millán, ''Gate oxide stability of 4H-SiC MOSFETs under on/off-state bias-temperature stress'', Materials Science Forum, 2012.
  • J. M. Ulloa, J.M. Llorens, B. Alén, D. F. Reyes, D.L. Sales, D. González, A. Hierro, ''High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing'', Applied Physics Letters 101, 253112/1-253112/4 (2012).
  • M.J. Milla, J.M. Ulloa, A. Guzmán, ''High optical sensitivity to ambient conditions of uncapped InGaAs surface quantum dots '', Applied Physics Letters, 100, 133701, 2012.
  • N. H. Alvi, P. E. D. Soto Rodriguez, V. J. Gómez, Praveen Kumar, G. Amin et al., ''Highly efficient potentiometric glucose biosensor based on functionalized InN quantum dots'', Appl. Phys. Lett. 101, 153110 (2012); doi: 10.1063/1.4758701.
  • D. F. Reyes, D. González, J. M. Ulloa, D. L. Sales, L. Dominguez, A. Mayoral, A. Hierro, ''Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots'', Nanoscale Research Letters 7, 653/1-653/7 (2012).
  • M.F. Romero, A.Jiménez, F. González-Posada Flores, S.Martín-Horcajo, F. Calle, E. Muñoz, ''Impact of N2 Plasma Power Discharge on AlGaN/GaN HEMT Performance'', IEEE Transactions on Electron Devices, 59, 374-9 (2012).
  • R. Gargallo-Caballero, A. Guzman, J. M. Ulloa, A. Hierro, M. Hopkinson, E. Luna, A. Trampert, , ''Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots'', Journal Applied Physics 111, 083530/1-083530/7 (2012).
  • J. M. Ulloa, D. F. Reyes, M. Montes, K. Yamamoto, D. L. Sales, D. González, A. Guzmán, A. Hierro, ''Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer'', Applied Physics Letters 100, 013107 (2012).
  • R. Ranchal, Y. Choi, M. Romera, J. W. Freeland, J. L. Prieto, D. Haskel, ''Influence of the Fe content on the Gd magnetic ordering temperature in Ni1-xFex/Gd multilayers'', Physical Review B 85, 024403 (2012).
  • R. Ranchal, V. Gutiárrez-Díez, V. González-Martín, ''Influence of the TbFe2 crystallization effect on the magnetic and magnetostrictive properties of [Fe3Ga/TbFe2]n heterostructures.'', Acta Materialia 60, 1840 (2012) .
  • C.A. Barrios, ''Integrated microring resonator sensor arrays for labs-on-chips'', Analytical and Bioanalytical Chemistry, vol. 403, pp. 1467-1475, 2012..
  • T. Brazzini, A. Bengoechea, M.A. Sánchez-García, F. Calle , ''Investigation of AlInN barrier ISFET structures with GaN capping for pH detection'', Sensors & Actuators: B. Chemical 176, 704-707 (2012), DOI:10.1016/j.snb.2012.09.109 .
  • T. J. Anderson, K. D. Hobart, L. O. Nyakiti, V. D. Wheeler, R. L. Myers-Ward, J. D. Caldwell, F. J. Bezares, G. G. Jernigan, M. J. Tadjer, E. A. Imhoff, A. D. Koehler, D. K. Gaskill, C. R. Eddy, Jr, F. J. Kub, ''Investigation of the Epitaxial Graphene/p-SiC Heterojunction'', IEEE Electron device letters, 11, 1610 - 1612 (2012).
  • J. G. Keizer, P. M. Koenraad , P. Smereka , J. M. Ulloa, A. Guzman, A. Hierro, ''Kinetic Monte Carlo simulations and cross-sectional scanning tunneling microscopy as tools to investigate the heteroepitaxial capping of self-assembled quantum dots'', Physical Review B 85, 155326/1-8 (2012).
  • A. Urbanczyk, R. Nötzel, ''Low-density InAs QDs with subcritical coverage obtained by conversion of In nanocrystals'', Journal of Crystal Growth 341 (1), 24-26 (2012).
  • G.F. Iriarte, ''Método de fabricación de sustratos de circuitos integrados basados en tecnología CMOS'', Oficina Española de Patentes y Marcas (OEPM),patente de invención con examen previo, Fecha de expedición 23/02/2012, Número de publicación ES2346396.
  • R. Ranchal, V. Gutiérrez-Díez, V. González-Martín, ''Magnetic properties of nanostructured systems based on TbFe2'', J. Alloys Compn. 536S, S329 (2012).
  • P. Perna, C. Rodrigo, M. Muñoz, J. L. Prieto, A. Bollero, D. Maccariello, J. L. F. Cuñado, M. Romera, J. Akerman, E. Jiménez, N. Mikuszeit, V. Cros, J. Camarero, R. Miranda, ''Magnetization reversal signatures in the magnetoresistance of magnetic multilayers'', Phys. Rev. B 86, 024421 (2012) [4 pages], view on line: 10.1103/PhysRevB.86.024421.
  • C.A. Barrios, S. Carrasco, M. Francesca, P. Yurrita, F.Navarro-Villoslada, M.C. Moreno-Bondi , ''Molecularly imprinted polymer for label-free integrated optical waveguide bio(mimetic)sensors '', Sensors and Actuators B: Chemical, vol. 161, pp. 607- 614, 2012.
  • A. Minj, D. Cavalcoli, S. Pandey, B. Fraboni, A. Cavallini, T. Brazzini, F. Calle, ''Nanocrack-induced leakage current in AlInN/AlN/GaN'', Scripta Materialia, 66, 327-330 (2012).
  • J.G. Rodríguez-Madrid, G.F. Iriarte, D. Araujo, M.P. Villar, O.A. Williams, W. Müller-Sebert, F. Calle, ''Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators'', Materials Letters, 66, 339-342 (2012).
  • A. Eljarrat,, S. Estradé, Z. Gacevic, S. Fernández-Garrido, E. Calleja, C. Magén, F. Peiró, ''Optoelectronic Properties of InAlN/GaN Distributed Bragg Reflector Heterostructure Examined by Valence Electron Energy Loss Spectroscopy'', Microscopy and Microanalysis 18, 1143-1154 (2012).
  • S. Albert, A. Bengoechea-Encabo, M.A. Sánchez-García, F. Barbagini, E. Calleja, E. Luna, A. Trampert, U. Jahn,P. Lefebvre, L.L. López, S. Estradé, J.M. Rebled, F. Peiro, G. Nataf, P. De Mierry, J. Zuñiga-Pérez, ''Ordered gan/ingan nanorods arrays grown by molecular beam epitaxy for phosphor-free white light emission'', International Journal of High Speed Electronics and Systems. Vol. 21, No. 1, 1250010 (24 pages), (2012).
  • P. Lefebvre, S. Albert, J. Ristic, S. Fernandez-Garrido, J. Grandal, M.-A. Sanchez-Garcia, E. Calleja, ''Oxygen photo-adsorption related quenching of photoluminescence in group-III nitride nanocolumns'', Superlattices and Microstructures 52,165-171 (2012).
  • X.Kong, S Albert, A Bengoechea-Encabo, M.A Sanchez-Garcia, E Calleja, A Trampert , ''Plasmon excitation in electron energy-loss spectroscopy for determination of indium concentration in (In,Ga)N/GaN nanowires'', Nanotechnology 23, 485701 (6pp), (2012). http://dx.doi.org/10.1088/0957-4484/23/48/485701.
  • S. Pandey, D. Cavalcoli, B. Fraboni, A. Cavallini, T. Brazzini, F. Calle, ''Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures'', Appl. Phys. Lett. 100, 152116 (2012).
  • S. Albert, A. Bengoechea-Encabo, P. Lefebvre, F. Barbagini, M. A. Sanchez-Garcia et al., ''Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies'', Applied Physics Letters 100, 231906 (2012).
  • A. Bengoechea-Encabo, S. Albert, M.A. Sánchez-García, L.L. López, S. Estradé, J.M. Rebled, F. Peiró G. Nataf, P. De Miery, J. Zuñiga, E. Calleja, , ''Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography'', Journal of Cristal Growth, 353, 1, 1-4, (2012) available online (2011).
  • S. Rajappan Achary, S. Agouram, J.F. Sánchez-Royo, M. López-Ponce, J. M. Ulloa, E. Muñoz, A. Hierro, V. Muñoz-Sanjosé, ''Self-assembled MgxZn1-xO quantum dots (0≤ x ≤1) on different substrates using spray pyrolysis methodology'', CrystEngComm,15,182 (2013). DOI: 10.1039/c2ce26253c, www.rsc.org/crystengcomm (2012).
  • A. Redondo-Cubero, A. Hierro, J.-M. Chauveau, K. Lorenz, G. Tabares, N. Franco, E. Alves, E. Muñoz, ''Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behavior of Mg at large contents'', CrystEngComm, 14, 1637 (4 p.) (2012) DOI: 10.1039/c2ce06315h, www.rsc.org/crystengcomm.
  • A. Urbanczyk, R. Nötzel , ''Site-controlled Ag nanocrystals grown by molecular beam epitaxy-Towards plasmonic integration technology'', Journal of Applied Physics 112 (12), 124302 (2012).
  • J.G. Rodríguez-Madrid, G.F. Iriarte, J. Pedrós, O.A. Williams, D. Brink, F. Calle, ''Super-High-Frequency SAW Resonators on AlN/Diamond'', EEE Electron Dev Lett, 33,4,495-497 (2012).
  • F.A.I. Chaqmaqchee, N. Balkan, J.M. Ulloa Herrero, ''Top-Hat HELLISH-VCSOA for optical amplification and wavelength conversion for 0.85 to 1.3mm operation'', Nanoscale Research Letters 2012, 7,525 (2012) View on line: http://www.nanoscalereslett.com/content/7/1/525.
  • M.J. Tadjer, T.J. Anderson, K.D. Hobart, L.O. Nyakiti, V.D. Wheeler, R.L. Myers-Ward, D.K. Gaskill, C.R. Eddy, Jr., F.J. Kub, F. Calle, ''Vertical conduction mechanism of the epitaxial graphene / n-type 4H-SiC heterojunction at cryogenic temperatures'', Appl. Phys. Lett. 100, 193506 (2012).
Year 2011
  • M. Bozkurt, J.M. Ulloa, P.M. Koenraad, ''An atomic scale study on the effect of Sb during capping of MBE grown III-V semiconductor QDs'', Science and Technology, 26(6), 064007-1/11 (2011).
  • F.J. Sanza, M. Holgado, F.J. Ortega, R. Casquel, D. López-Romero, M.J. Bañuls, M.F. Laguna, C.A. Barrios, R. Puchades, A. Maquieira, ''Bio-Photonic Sensing Cells over transparent substrates for anti-gestrinone antibodies biosensing'', Biosensors and Biolectronics, vol. 26, pp. 4842-4847 (2011) .
  • J. Yuan, H. Wang, P.J. van Veldhoven, J. Wang, T. de Vries, B. Smalbrugge, C. Jin, P. Nouwens, E.J. Geluk, A.Y. Silov, R. Nötzel, ''Controlling polarization anisotropy of site-controlled InAs/InP (100) quantum dots'', Applied Physics Letters 98, 201904 (2011).
  • F.J. Sanza, M.F. Laguna, R. Casquel, M. Holgado, C.A. Barrios, F.J. Ortega, D. López-Romero, J.J. García-Ballesteros, M.J. Bañuls, A. Maquieira, R. Puchades, ''Cost-effective SU-8 micro-structures by DUV excimer laser lithography for label-free biosensing'', Applied Surface Science, 257, 5403-5407 (2011).
  • F. Barbagini, A. Bengoechea-Encabo, S. Albert, J. Martínez, M.A. Sánchez-García, A. Trampert, E. Calleja , ''Critical aspects of substrate nanopatterning for the ordered growth of GaN nanocolumns'', Nanoscale Research Letters, 6:632 (2011) doi:10.1186/1556-276X-6-632, http://www.nanoscalereslett.com/content/6/1/632/abstract.
  • D.R. Khanal, A.X. Levander, K.M. Yu, Z. Liliental-Weber, W. Walukiewicz, J. Grandal, E. Calleja, J. Wu, ''Decoupling Single Nanowire Mobilities Limited by Surface Scattering and Bulk Impurity Scattering'', Journal of Applied Physics 110, 033705 (2011).
  • J. López-Gejo, A. Navarro, A. Arranz, C. Palacio, E. Muñoz, G. Orellana, ''Direct Grafting of Long-Lived Luminescent Indicator Dyes to GaN Light-Emitting Diodes (LEDs) for Chemical Microsensor '', ACS Applied Materials & Interfaces, 3, 3846-54 (2011) .
  • G.F.Iriarte, J.G.Rodríguez, F.Calle, ''Effect of substrate-target distance and sputtering pressure in the synthesis of AlN thin films'', Microsystem Technologies, 17, 3, 381-386, DOI: 10.1007/s00542-010-1198-2 (2011).
  • K. Ding, Z. Liu, L. Yin, H. Wang, R. Liu, M.T. Hill, M.J.H. Marell, P.J. van Veldhoven, R. Nötzel, C.Z. Ding, ''Electrical injection, continuous wave operation of subwavelength-metallic-cavity lasers at 260 K'', Applied Physics Letters 98, 231108 (2011).
  • L. Midolo, P.J. van Veldhoven, M.A. Dundar, R. Nötzel, A. Fiore, ''Electromechanical wavelength tuning of double-membrane photonic crystal cavities'', Applied Physics Letters 98, 211120 (2011).
  • S. Albert, P. Lefebvre, A. Bengoechea-Encabo, M.A. Sanchez-Garcia, E. Calleja, U. Jahn, A. Trampert, ''Emission control of InGaN nanocolumns grown by MBE on Si(111) substrates'', Applied Physics Letters 99, 131108 (2011).
  • R. Ranchal, E. López, J. L. Prieto, C. Aroca, ''Enhancement of the crystallization process of TbxFe1-x thin films upon the formation of alpha-Tb phase'', Revista. Acta Materialia, 59, 2865-2871 (2011).
  • P E. Malinowski, J. Duboz, P. De Moor, K. Minoglou, J.John, S.Martin Horcajo, F. Semond, E. Frayssinet, P. Verhoeve, M. Esposito,B. Giordanengo, A. Benmoussa, R. Mertens,C. Van Hoof, ''Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes'', Appl. Phys. Lett. 98, 141104, http://dx.doi.org/10.1063/1.3576914 (3 pages) (2011).
  • N. Karayiannis, R. Malshe, J.J. de Pablo, M. Laso , ''Fivefold symmetry as an inhibitor to hard-sphere crystallization'', Phys. Rev. E 83, 061505 (2011).
  • K. Yamamoto, A. Nakamura, J. Temmyo, E. Muñoz, A. Hierro, , ''Green Electroluminescence from ZnCdO Multiple Quantum Well Light-Emitting Diodes Grown by Remote-Plasma-Enhanced Metalorganic Chemical Vapor Deposition'', IEEE Photonics Technology Letters, 23,1052-54 (2011) .
  • G.F.Iriarte , ''Growth of Nickel Silicide (NiSix) Nanowires by Silane Decomposition '', Current Applied Physics 11, 82-86, (2011). doi:10.1016/j.cap.2010.06.023.
  • Z. Gacevic, S. Fernández-Garrido, J. M. Rebled, S. Estradé, F. Peiró, E.Calleja, ''High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy'', Applied physics letters 99, 031103 (2011).
  • P. Cobos, M. Maicas, M. Sanz, C. Aroca, ''High Resolution System for Nanoparticles Hyperthermia Efficiency Evaluation'', IEEE Transactions on magnetics, 47,10,2360-2363 (2011).
  • A. Urbanczyk, G.J. Hamhuis, R. Nötzel, ''Hybrid semiconductor quantum dot-metal nanocrystal structures prepared by molecular beam epitaxy'', Journal of Crystal Growth 323, 290-292 (2011).
  • G. N. Toepperwein, N. C. Karayiannis, R. A. Riggleman, M. Kroger, J. J. de Pablo , ''Influence of nanorod inclusions on structure and primitive path network of polymer nanocomposites at equilibrium and under deformation'', Macromolecules, 44, 1034-1045 (2011).
  • G.F.Iriarte, D. F. Reyes, D. González, J.G.Rodríguez, R. García, F.Calle, ''Influence of substrate crystallography on the room temperature synthesis of AlN thin films by reactive sputtering'', Applied Surface Science, 257 (2011) 9306 - 9313, http://dx.doi.org/10.1016/j.apsusc.2011.05.025(2011).
  • R. Cuerdo, F. Calle, ''Influence of temperature and drain current on source and drain resistances in AlGaN/GaN HEMTs'', Solid-State Electronics, 63, 1,184-188 (2011).
  • D. F. Reyes, D. González, D. L. Sales, R. Gargallo-Caballero, A. Guzmán, J. M. Ulloa, A. Hierro, ''Inhibition of In desorption in diluted nitride InAsN QD'', Applied Physics Letters, 98, 071910 (2011).
  • J. Grandal, J. Pereiro, A. Bengoechea-Encabo, S. Fernández-Garrido, M.A. Sánchez-García, E. Muñoz, E. Calleja, E. Luna, A. Trampert, ''InN/InGaN multiple quantum wells emitting at 1.5 µm grown by MBE'', Applied Physics Letters 98, 061901 (2011).
  • Z. Gacevic, A. Das, J. Teubert, Y. Kotsar, P. K. Kandaswamy, Th. Kehagias, T. Koukoula, Ph. Komninou, E. Monroy, ''Internal quantum efficiency of III-nitride quantum dot superlattices growth by plasma-assisted molecular-beam epitaxy '', Journal of Applied Physics 109, 103501 (2011).
  • R. Ranchal, V. González-Martín, ''Investigation on the structural and magnetic properties of sputtered TbFe2/Fe3Ga heterostructures'', J. Appl. Phys. 110, 053901 (2011).
  • G.F.Iriarte , ''Large scale synthesis of silicon nanowires '', Journal of Nanoparticle Research,13, 4, 1737-1745, DOI: 10.1007/s11051-010-9928-z (2011), http://www.springerlink.com/content/c757879511404866/ .
  • M. Romera, R. Ranchal,D. Ciudad, M. Maicas, C. Aroca, ''Magnetic properties of sputtered Permalloy/molybdenum multilayers'', Journal of Applied Physics 110, 083910 (2011).
  • E. Cueto, M. Laso, F. Chinesta, ''Meshless stochastic simulation of micro-macro kinetic theory models'', International Journal for Multiscale Computational Engineering 9, 1-16 (2011).
  • K. Swaminathan, L. Yang, T. J. Grassman, G. Tabares, A. Guzmán, A. Hierro, S. A. Ringel, ''Metamorphic In0.20Ga0.80As p-i-n photodetectors grown on GaAs substrates for near infrared applications'', Optics Express, 19, 8, 7280-7288 (2011).
  • C.A. Barrios, C. Zhenhe, F. Navarro-Villoslada, D. López-Romero, M.C. Moreno-Bondi , ''Molecularly imprinted polymer diffraction grating as label-free optical bio(mimetic)sensor'', Biosensors and Bioelectronics, 26, 2801-2804 (2011).
  • M. Montes, J.M. Ulloa, M del Moral, A. Guzmán, A. Hierro, ''Near Infrared InAs/GaAsSb Quantum Dot Light Emitting Diodes'', IEEE Journal of Quantum Electronics, 47, 12, 1547(2011.
  • A. Dussaigne, P.Corfdir, J. Levrat, T. Zhu, D. Martin, P. Lefebvre, J.-D. Ganiiere, B. Deveaud-Plédran, N. Grandjean, Y. Arroyo, P. Stadelmann , ''One dimensional exciton luminescence induced by extended defects in nonpolar (Al,Ga)N/GaN quantum wells'', Semiconductor Science and Technology 26 (2), 025012 (2011).
  • R. Casquel, M. Holgado, F.J. Sanza, M.F. Laguna, C.A. Barrios, D. López-Romero, F.J. Ortega, M.J. Bañuls, R. Puchades, A. Maquieira, ''Optimization of a label-free biosensor vertically characterized based on a periodic lattice of high aspect ratio SU-8 nano-pillars with a simplified 2D theoretical model'', Physica Status Solidi (c), 6, 1087-1092 (2011).
  • MJ. Milla, A. Guzmán, R.Gargallo-Caballero, JM. Ulloa, A. Hierro, ''Optimization of InGaAsN(Sb)/GaAs Quantum Dots for optical emission at 1.55 µm with low optical degradation'', Journal of Crystal Growth,323 215-218 (2011) .
  • M.A. Dundar, B. Wang, R. Nötzel, F. Karouta, R.W. van der Heijden, ''Optothermal tuning of liquid crystal infiltered InGaAsP photonic crystal nanocavities'', Journal of the Optical Society of America B-Optical Physics 28,1514-1517 (2011).
  • X. Kong, J. Ristic, E. Calleja, M.A. Sanchez-Garcia, A. Trampert, ''Polarity determination by electron energy-loss spectroscopy: Application to ultra-small III-nitride semiconductor nanocolumns'', Nanotechnology (41):415701. Epub (2011).
  • G. Tabares, A. Hierro, B. Vinter, J.-M. Chauveau, ''Polarization-sensitive Schottky photodiodes based on a-plane ZnO/ZnMgO multiple quantum-wells'', Appl. Phys. Lett. 99, 071108 (2011); http://dx.doi.org/10.1063/1.3624924.
  • M. Currie, J. D. Caldwell, F. J. Bezares, J. Robinson, T. Anderson, H. Chun, M. J. Tadjer, ''Quantifying Pulsed Laser Induced Damage to Graphene'', Appl. Phys. Lett 99, 211909 (2011).
  • P. Lefebvre, S. Fernández-Garrido, J. Grandal, J. Ristíc, M.A. Sánchez-García, E. Calleja, ''Radiative defects in GaN nanocolumns: correlation with growth conditions and sample morphology'', Applied Physics Letters, 98, 083104 (2011).
  • A. Guzmán, R. San-Román, A. Hierro, ''Room temperature absorption in laterally biased Quantum Infrared Detectors fabricated by MBE regrowth'', Journal of Crystal Growth, 323, 1, 496-500 (2011).
  • A. Urbanczyk, F.W.M. Van Otten, R. Nötzel, ''Self-aligned epitaxial metal-semiconductor hybrid nanostructures for plasmonics'', Applied Physics Letters 98, 243110 (2011).
  • R. Cuerdo, F. Calle, ''Source and drain resistances behaviour as a function of temperature and drain current in AlGaN/GaN HEMTs'', Solid State Electronics, 63,184-188 (2011).
  • B. Wang, M.A. Dundar, R. Nötzel, F. Karouta, S. He, R.W. van der Heijden, ''Spectrally encoded photonic crystal nanocavities by independent lithographic mode tuning '', Journal of the Optical Society of America B-Optical Physics 28, 721-726 (2011).
  • J.L. Prieto, M. Muñoz, E. Martínez, ''Structural characterization of magnetic nanostripes by fast domain wall injection'', Physical Review B,83,104425 (2011).
  • M. Romera, M. Muñoz, M. Maicas, J. M. Michalik, J. M. de Teresa, C. Magén, J. L. Prieto, ''Study of the enhanced exchange and reduced magnetization of Gd in an Fe/Gd/Fe trilayer'', Phys. Rev. 84, 094456 (2011).
  • A. Redondo-Cubero, M. Vinnichenko, M. Krause, A. Mucklich, E. Muñoz et al., ''Sublattice-specific ordering of ZnO layers during the heteroepitaxial growth at different temperatures'', J. Appl. Phys. 110, 113516 (7 p.) (2011); doi: 10.1063/1.3665204,http://dx.doi.org/10.1063/1.3665204 .
  • M.Muñoz, J.L.Prieto, ''Suppression of the intrinsic stochastic pinning of domain walls in magnetic nanostripes'', Nature Communications, DOI: 10.1038/ncomms1575 (2011).
  • M. J. Tadjer, R. Cuerdo, T. J. Anderson, K. D. Hobart, S. Martín-Horcajo, F.Calle, ''Temperature and time dependent threshold voltage characterization of AlGaN/GaN high electron mobility transistors'', Physica Status solidi c 8, 2232-2234 (2011).
  • F.J. Aparicio, M. Holgado, I. Blaszczyk-Lezak, A. Borras, A. Griol, C.A. Barrios, R. Casquel, F. J. Sanza, H. Sohlstrom, M. Antelius, A.R. González-Elipe, A. Barranco, ''Transparent nanometric organic luminescent films as UV active components in photonic structures'', Advanced Materials, 23, 761-765 (2011).
  • A. Bengoechea-Encabo, F. Barbagini, S. Fernández-Garrido, J. Grandal, J. Ristic, Sánchez-García, E. Calleja, U.Jahn, E. Luna, A. Trampert, ''Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks'', Journal of Cristal Growth, 325,1,89-92 (2011).
  • G.R. Mutta, J.M. Routoure, B. Guillet, L. Mechin, J. Grandal, S. Martin, T. Brazzini, F. Calle, M. A. Sanchez-Garcia, P. Marie, P. Ruterana, ''Volume charge carrier number fluctuations probed by low frequency noise measurements in MBE grown InN layers'', Appl. Phys. Lett. 98, 252104 (2011).
Year 2010
  • J. M. Caridad, F. Rossella, V. Bellani, M. Maicas, M. Patrini, E. Díez, '' Effects of particle contamination and substrate interaction in the Raman response of unintentionally doped graphene'', Journal of Applied Physics 108, 084321(2010).
  • M. Montes, A. Guzmán, A. Trampert, A. Hierro, ''1.3 µm emitting GaInNAs/GaAs quantum well resonant cavity LEDs'', Solid State Electronics, 54, 492-496 (2010).
  • C. F. Carlborg, K. B. Gylfason, A. Kamierczak, F. Dortou, M. J. Bañuls Polo, A. Maquieira Catala, G. M. Kresbach, H. Sohlström, T. Moh, L. Vivien, J. Popplewell, G. Ronan, C.A. Barrios, G. Stemme, W. Van Der Wijngaart, ''A packaged optical slot-waveguide ring resonator sensor array for multiplex label-free assays in labs-on-chips'', Lab Chip, 10, 28-290 (2010) .
  • J. L. Prieto, R. Bermejo, M. Laso , ''A semi-Lagrangian micro-macro method for viscoelastic flow calculations'', Journal of Non-Newtonian Fluid Mechanics, 165, 120-135 (2010).
  • C. Rivera, J. Pereiro, A. Navarro, E. Muñoz , O. Brandt, H.T. Grahn, ''Advances in Group-III-Nitride Photodetectors'', The Open Electrical & Electronic Engineering Journal, 4, 1-9 (2010) .
  • M. Bozkurt, V. A. Grant, J. M. Ulloa, R. P. Campion, C. T. Foxon, E. Marega, Jr., G. J. Salamo, P. M. Koenraad , ''Atomic scale characterization of Mn doped InAs/GaAs quantum dots'', Applied Physics Letters, 96, 042108 (2010) .
  • G. Meneghesso, F. Rossi, G. Salviati, M. J. Uren, E. Muñoz, E. Zanoni, ''Correlation between kink and cathodoluminescence spectra in AlGaN/GaN high electron mobility transistors'', Applied Physics Letters 96, 263512 (2010).
  • M. Montes, A. Hierro, J. M Ulloa, J. Miguel-Sánchez, , A. Guzmán, B. Damilano, M. Hugues, M. Al Khalfioui, J.-Y. Duboz, J. Massies, ''Current spreading efficiency and Fermi level pinning in GaInNAs/GaAs quantum well laser diodes'', IEEE Journal of Quantum Electronics, 46, 7 (2010).
  • A. Redondo-Cubero, K. Lorenz, R. Gago, N. Franco, M.-A. Di Forte Poisson, E. Alves, E. Muñoz, ''Depth-resolved analysis of spontaneous phase separation in the growth of lattice-matched AlInN'', Journal Physics D: Appl. Phys. 43, 055406 (2010).
  • G.F.Iriarte , ''E-beam lithography of nano-interdigital transducers on insulating and semiconducting substrates '', Microsystem Technologies, 16 (12), 2023-2027, DOI: 10.1007/s00542-010-1149-y (2010).
  • J. M. Ulloa, P. M. Koenraad, M. Bonnet-Eymard, A. Létoublon, N. Bertru, ''Effect of a lattice-matched GaAsSb capping layer on the structural properties of InAs/InGaAs/InP quantum dots'', J. Appl. Phys. 107, 074309 (2010) .
  • P. Corfdir, P. Lefebvre, L. Balet, S. Sonderegger, A. Dussaigne, T. Zhu, D. Martin, J.-D. Ganiere, N. Grandjean, B. Deveaud-Plédran., ''Excitons recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence. '', Journal of Applied Physics 107, 043524 (2010)..
  • M. Montes, A. Hierro, J.M. Ulloa, A. Guzán, M. Al Khalfioui, M. Hugues, B. Damilano, J. Massies, ''External efficiency and carrier loss mechanisms in InAs/GaInNAs quantum dot light-emitting diodes'', Journal of Applied Physics, 108 (3), 033104 (2010).
  • J. M. Ulloa, R. Gargallo-Caballero, M. Bozkurt, M. Del Moral, P. M. Koenraad, A. Guzán, A. Hierro, ''GaAsSb-capped InAs quantum dots: from enlarged quantum dot height to alloy fluctuations'', Physical Review B, 81, 165305 (2010).
  • N. Sofikiti, N. Chaniotakis, J.Grandal, M. Utrera, M.A. Sánchez-García, E. Calleja., ''GaN and InN nanocolumns as electrochemical sensing elements: Potentiometric response to KCl, pH and urea.'', Materials Letters, 64, 12, 1332-1335 (2010).
  • G.F.Iriarte , ''Growth of nickel disilicide nanowires by CVD '', Journal of Non-Crystalline Solids 356, 1135-1144, (2010) .
  • D. López-Romero, C.A. Barrios, M. Holgado, M.F. Laguna, R. Casquel, ''High aspect-ratio SU-8 resist nano-pillar lattice by e-beam direct writing and its application for liquid trapping'', Microelectronic Engineering, 87, 663-667 (2010) .
  • G. Tabares, A. Hierro, J.M. Ulloa, A. Guzman, E. Muñoz, A. Nakamura, T. Hayashi, J. Temmyo, ''High responsivity and internal gain mechanisms in Au-ZnMgO Schottky photodiodes'', Applied Physics Letters 96, 101112 (2010).
  • G.F. Iriarte, J.G. Rodríguez, F. Calle , ''IC Compatible Synthesis of AlN for Energy Harvesting Applications '', Revista Materia. ISSN 1517-7076 , Volume 15 - Number 4, 4th quarter of 2010.
  • Z. Gacevic, S. Fernández-Garrido, D. Hosseini, S. Estrade, F. Peiró, E. Calleja, ''InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam Epitaxy'', Journal of Applied Physics, 108, 113117 (2010).
  • R. Ranchal, J. L. Prieto, P. Sánchez, C. Aroca. , ''Influence of the substrate stiffness on the crystallization process of sputtered TbFe_2 thin films'', Journal Applied Physics,107, 113918 (2010) .
  • A.Vilalta-Clemente, G. R.Mutta, M. P. Chauvat, M. Morales, J. L. Doualan, P. Ruterana,J. Grandal, M. A. S ánchez-Garcáa, F. Calle, E. Valcheva, K. Kirilov, ''Investigation of InN layers grown by molecular beam epitaxy on GaN templates'', Physica Status Solidi (a), 207, 1079-1082 (2010).
  • M. Holgado, C.A. Barrios, F.J. Ortega, F.J. Sanza, R. Casquel, M.F. Laguna, M.J. Bañuls, D. López-Romero, R. Puchades, A. Maquieira, ''Label-free biosensing by means of periodic lattices of high aspect ratio SU-8 nano-pillars'', Biosensors and Bioelectronics, 25, 2553-2558 (2010).
  • C.A.Barrios, M. Holgado, M.F.Laguna, R. Casquel, F.J. Sanza, A. Lavín, C. Molpeceres, M. Morales, D. López-Romero , ''Los biochips fotónicos facilitarán los diagnósticos'', Revista UPM, 18, 12-15 (2010).
  • E. Calleja, M.A. Sánchez-García, P. Lefebvre, J.Ristic, A. Bengoechea, Z. Gacevic, F. Barbagini, ''Los LEDs también iluminarán las ciudades'', Revista UPM, 16, 11-15 (2010).
  • M. Maicas, M. Sanz, H. Cui, C. Aroca, P. Sánchez , ''Magnetic properties and morphology of Ni nanoparticles synthesized in gas phase'', Journal of Magnetism and Magnetic Materials, 322, 3485-3489 (2010) .
  • J. Pereiro, A Redondo-Cubero, S. Fernández-Garrido, C. Rivera, A Navarro, E. Muñoz, E. Calleja, R. Gago, ''Mg doping of InGaN layers grown by PA-MBE for the fabrication of Schottky barrier photodiodes'', Journal Physics D: Applied Physics 43, 335101 (2010).
  • J. López-Gejo, A. Arranz, A. Navarro, C. Palacio, E. Muñoz, G. Orellana, ''Microsensors Based on GaN Semiconductors Covalently Functionalized with Luminescent Ru(II) Complexes'', J. Am. Chem Soc., 132(6), 1746-7 (2010) .
  • N. Karayiannis, K. Foteinopoulou, C. F. Abrams, M. Laso, ''Modeling of crystal nucleation and growth in athermal polymers: self-assembly of layered nano-morphologies'', Soft Matter 6, 2160-2173 (2010).
  • K. Foteinopoulou, M. Laso , ''Numerical simulation of bubble dynamics in a Phan-Thien-Tanner liquid: Non-linear shape and size oscillatory response under periodic pressure'', Ultrasonics 50, 758-776 (2010).
  • K.B. Gylfason, C.F. Carlborg, A.Kazmierczak, F.Dortu, H. Sohlström, L. Vivien, C.A. Barrios, W. Van Der Wijngaart, G. Stemme, ''On-chip temperature compensation in an integrated slot-waveguide ring resonator refractive index sensor array'', Optics Express, 28, 4, 3226-3237 (2010) .
  • E. Sakalauskas, P. Schley, J. Rathel, T.A. Klar, R. Muller, J. Pezoldt, K. Tonisch, J. Grandal, M.A. Sáchez-García, E. Calleja, A. Vilalta-Clemente, P. Ruterana, R. Goldhahn, ''Optical properties of InN grown on Si(111) substrate'', Physica Status Solidi (a), 207, 1066-1069 (2010).
  • MF. Romero, M.M.Sanz, I. Tanarro, A Jiménez, E. Muñoz , ''Plasma diagnostic and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma enhanced chemical vapour deposition'', Journal. D: Appl. Phys. 43, 495202 (2010).
  • M. Amado. E. Díez, D. López-Romero, F. Rosella, J. M. Caridad, F. Dionigi, V. Belland, D.K.Maude, ''Plateau-insulator transition in grapheme'', New Journal of Physics 12, 053004 (9pp) (2010).
  • A. Nakamura, T. Hayashi, A. Hierro, G. Tabares, J.M. Ulloa, E. MuÑoz , J. Temió, ''Schottky barrier contacts formed on polar and nonpolar MgZnO films grown by remote plasma enhanced MOCVD'', Phys. Stat. Sol. B 247, 1472 (2010).
  • M.J Bañuls, V.González-Pedro, C.A. Barrios, R. Puchades, Á. Maquieira , ''Selective chemical modificationof silicon nitride/silicon oxide nanostructures to develop label-free biosensors '', Biosensors and Bioelectronic, 25, 1460-1466 (2010) .
  • J. Akerman, M. Muñoz, M. Maicas, J.L. Prieto, ''Stochastic nature of the domain wall depinning in permalloy magnetic nanowires'', Physical Review B 82, 064426 (2010).
  • J.L. Prieto, P. Ilg, R. Bermejo, M. Laso, ''Stochastic semi-Lagrangian micro-macro calculations of Liquid Crystalline solutions in complex flows'', Journal of Non-Newtonian Fluid Mechanics 165,185-195 (2010).
  • G.F.Iriarte , ''Structural characterization of highly textured AlN thin films grown on titanium'', Journal of Materials Research, 25 (3), 458-463,(2010) .
  • R. Gago, M. Vinnichenko, A. Redondo-Cubero, Z. Czigany, L. Vázquez, ''Surface Morphology of Heterogeneous Nanocrystalline Rutile/Amorphous Anatase TiO2 Films Grown by Reactive Pulsed Magnetron Sputtering'', Plasma Processes and Polymers, 7, 9-10, 813-823 (2010).
  • G.F. Iriarte, J.G. Rodríguez, F. Calle, ''Synthesis of c-axis oriented AlN thin films on different substrates: A review '', Materials Research Bulletin 45, 1039-1045, (2010) .
  • G.F.Iriarte , ''The influence of the magnetron on the growth of aluminium nitride thin films deposited by reactive sputtering'', Journal of Vacuum Science and Technology A, 28(2), 193-198 (2010).
  • G.F.Iriarte , ''Using Transmission Electron Microscopy (TEM) for Chemical Analysis of Semiconductors'', Microscopy: Science, Technology, Applications and Education, Book Chapter, 1888-1896, Edittors: Antonio Mendez-Vilas and Jesus Diaz Alvarez, Publisher: Formatex Research Center, Volum 3, ISBN (13), 97.
  • J. Pedrós, F. Calle, R. Cuerdo, J. Grajal, Z. Bougrioua , ''Voltage tunable surface acoustic wave phase shifter on AlGaN/GaN'', Applied Physics Letters, 96,123505 (2010).
Year 2009
  • S. Fernández-Garrido, J. Grandal, E. Calleja, M.A. Sánchez-García, D. L. Romero, ''A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)'', Journal of Applied Physics, 106, 126102, (2009) .
  • C. Angulo Barrios, ''Analysis and modeling of a silicon nitride slot-waveguide microring resonator biochemical sensor'', Optical Sensors, Proceding of SPIE, 7356, 735605 (1-9) (2009).
  • E. Pawel, Jj. Malinowski, J-Y Duboz, G. Hellings, A.Lorenz, J.G. Rodriguez Madrid, Ch. Turdevant, K. Cheng, M. Leys, J. Derluyn, J. Das, M. Germain, K. Minoglou, P. De Moor, E. Frayssinet, F. Semond, J-F. Hochedez, B. Giordanengo, R. Mertens, ''Bakside-Illuminated GaN-on-Si Schottky Photodiodes for UV Radiation Detection'', IEEE Electron Device Letters, 30,12, 1308-1310 (2009).
  • A. Redondo-Cubero, K Lorenz, R Gago, N Franco, S. Fernández-Garrido, P.J.M. Smulders, E.Muñoz, E. Calleja, I.M. Watson, E. Alves, ''Breakdown of anamalous channeeling with ion energy for accurate strain determination in GaN-based heterostructures'', Applied Physics Letters, 95, 051921-3 (2009) Applied Physics Letters, 95, 051921-3 (2009) Applied Physics Letters, 95, 051921-3 (2009) .
  • A .Hierro, G. Tabares, J. M. Ulloa, E. Muñoz, A. Nakamura, T. Hayashi, J. Temmyo, ''Carrier compensation by deep levels in Zn1-xMgxO/sapphire'', Applied Physics Letters, 94, 232101-1, 232101-3 (2009).
  • J. Eroles, A. Bengoechea, M.A. Sánchez-García ,F. Calle, ''Characterization of a pH sensor based on an AlGaN/GaN transistor'', IEEE Conf. Proc. 2009 Spanish Conference on Electron Devices (2009).
  • N. Karayiannis, M. Kroger, ''Combined molecular algorithms for the generation, equilibration and topological analysis of entangled polymers: methodology and performance'', International Journal of Molecular Sciences, 5054-5089 (2009).
  • C. Alemán, N. Karayiannis, D. Curco, K. Foteinopoulou, M. Laso, ''Computer Simulations of Amorphous Polymers: from Quantum Mechanical Calculations to Mesoscopic Models'', Journal of Molecular Structure: THEOCHEM 898, 62-72 (2009).
  • N. Karayiannis, K. Foteinopoulou, M. Laso, ''Contact network in nearly jammed disordered packings of hard-sphere chains'', Physical Review E 80, 011307 (2009).
  • R. Gargallo-Caballero, A.Guzmán, M. Hopkinson, J. M. Ulloa, A. Hierro, E. Calleja, ''Dependence of N incorporation into (Ga)InAsN QDs on Ga content probed by rapid thermal annealing'', Physica status solidi (c), 6, 6, 1441-1444 (2009).
  • N. Karayiannis, M. Laso, M. Kroger, ''Detailed atomistic molecular-dynamics simulations of α-conotoxin AuIB in water'', Journal of Physical Chemistry B, 113, 5016 (2009).
  • P.R. Edwards, R.W. Martin, K. Bejtka, K.P. O´Donnell, S. Fernández-Garrido, E. Calleja , ''Determination Correlating Composition and Luminescence Variations in AlInGaN epilayers '', Superlattices and Microstructures,45,151 (2009) .
  • D.R. Khanal, W. Walukiewicz, J. Grandal, E. Calleja, J. Wu, , ''Determining surface Fermi level pinning position of InN nanowires using electrolyte gating'', Applied Physics Letters, 95, 173114 (2009). .
  • N. Sofikiti, N. Chaniotakis, J. Grandal, M. Utrera, M.A. Sanchez-Garcia, E. Calleja, E. Iliopoulos, A. Georgakilas, ''Direct immobilization of enzymes in GaN and InN nanocolumns: The urease case study'', Applied Physics Letters 95, 113701 (2009) .
  • M. Montes, A. Hierro, J. M. Ulloa, A. GuzmÁn, M. Al Khalfioui, M. Hugues, B. Damilano, J. Massies, ''Electroluminescence analysis of 1.3-1.5 µm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers'', Phys. Stat. Sol. C, 6, 6, 1424-1427 (2009).
  • J.H. Blokland, M. Bozkurt, J.M. Ulloa, D. Reuter, A.D. Wieck, P.M. Koenraad, P.C.M. Christianen, J.C. Maan, ''Ellipsoidal InAs quantum dots observed by cross-sectional STM'', Applied Physics Letters, 94, 023107 (2009).
  • V. Haxha, R.Garg, M.A.Migliorato, I.W.Drouzas, J.M.Ulloa, P.M.Koenraad, M.J.Steer, H.Y.Liu, M.J.Hopkinson, D.J.Mowbray , ''Empirical bond order potential calculations of the elastic properties of epitaxial InGaSbAs layers'', Microelectronics Journal 40, 533-536 (2009).
  • N. Karayiannis, K. Foteinopoulou, M. Laso, ''Entropy-driven crystallization in dense systems of athermal chain molecules '', Physical Review Letters, 130, 164908 (2009).
  • Z. Gacevic, S. Fernández-Garrido, E. Calleja, E. Luna, A. Trampert, ''Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy'', Physica status Solidi (c), 6, S2, S643-S645 (2009).
  • A. Navarro, C. Rivera, J. Pereiro, E. Muñoz, B. Imer, S.P. Denbaars, J.S. Speck., ''High responsivity A-plane GaN-based metal-semiconductor-metal photodetectors for polarization-sensitive applications'', Applied Physics Letters, 94, 213512-1, 213512-3 (2009) .
  • R. Cuerdo, E. Sillero, M. F. Romero, M. J. Uren, M.-A. Di Forte Poisson, E.Muñoz, F. Calle, ''High Temperature Microwave Performance of Submicron AlGaN/GaN HEMTs on SiC'', IEEE Electron Device Letters, 30, 808-810 (2009).
  • F. González-Posada Flores, A. Redondo, A. Bengoechea, A.Jiménez, R.Gago, A.F.Braña, E. Muñoz, ''High-resolution hydrogen profiling in AlGaN/GaN heterostructures grown by different epitaxial methods'', Journal of physics D 42(5), 055406 (2009).
  • A. Redondo-Cubero, K. Lorenz, N. Franco, S. Fernández-Garrido, R. Gago, P.J.M. Smulders, E. Muñoz, E. Calleja, E. Alves, ''Influence of steering effects on strain detection in AlGaInN/GaN heterostructures by ion channelling'', J. Phys. D: Appl. Phys., 42 (6), 065420-1/8 (2009) .
  • M. Romera, M. Muñoz, P. Sánchez, C. Aroca, J. L. Prieto, ''Influence on the magnetoresistance of a spin valve due to the insertion of an ultrathin Gd layer in the free layer'', J. Appl. Phys. 106, 023922 (2009).
  • J.Grandal, M.A. Sánchez-García , E. Calleja , S. Lazic, E. Gallardo, J. M. Calleja, E. Luna , A. Trampert, M. Niebelschutz, V. Cimalla, O. Ambacher , ''InN nanocolumns (Book Chapter)'', Ed. Taylor and Francis Group: Indium Nitride and related alloys, 599-615 (2009).
  • J. Grandal, M.A. Sánchez-García, E. Calleja, E. Gallardo, J.M. Calleja, E. Luna, A. Trampert, U. Jahn , ''InN nanocolumns grown by plasma-assisted molecular beam epitaxy on A-plane GaN templates'', Applied Physics Letters, 94, 221908 (2009) .
  • J. M. Ulloa, M. Bozkurt, P. M. Koenraad, ''Intrinsic and Mn doped InAs quantum dots studied at the atomic scale by crossectional scanning tunnelling microscopy '', Solid State Comunications, R, 149, 1410 (2009).
  • V. Tasco, A. Campa, I. Tarantini, A. Passaseo, F. González-Posada, A. Redondo-Cubero, K. Lorenz, N. Franco, E. Muñoz, ''Investigation of different mechanisms of GaN growth induced on AlN and GaN nucleation layer'', Journal of Applied Physics, 105, 063510 (2009).
  • M. Laso, N. Ch. Karayiannis, K. Foteinopoulou, M. Kroger, M. Mansfield , ''Maximally random jammed packings of hard-sphere chain molecules: universal scaling, entanglement and knotting'', Soft Matter, 5 , 1762-1770 (2009).
  • F. Yakuphanoglu, R. Mehrotra, A. Gupta, M. Muñoz, ''Nanofiber organic semiconductors: The effects of nanosize on the electrical charge transport and optical properties of bulk polyanilines'', Journal of Applied Polymer Science, 114, 794-799 (2009).
  • T.E. Gómez álvarez-Arenas, P.Yu. Apel, O.L. Orelovitch, M.Muñoz, ''New ultrasonic technique for the study of teh pore shape of track-etched pores in polymer films'', Radiation Measurements, 44, 1114-1118 (2009).
  • C.Angulo Barrios, ''Optical Slot-Waveguide based Biochemical Sensors '', Sensors, 9, 6, 4751-4765 (2009) .
  • G.F. Iriarte, J.G. Rodríguez, F. Calle , ''Optimal Synthesis of C-Axis Oriented AlN Thin Films '', Integrated Ferroelectrics, 113: 1-10, 2009.
  • J. Pereiro, C. Rivera, A. Navarro, E. Muñoz, R. Czernecki, S. Grzanka, M. Leszczynski , ''Optimization of InGaN/GaN MQW photodetector structures for high responsivity performance '', IEEE Journal of Quantum Electronics, 45, 617-622 (2009) .
  • A. Ammar, F. Chinesta, D. Ryckelynck, M. Laso, ''Reduced Numerical Modeling of Flows Involving Liquid-Crystalline Polymers '', Journal of Non-Newtonian Fluid Mechanics, 160, 140-165 (2009).
  • V. Haxha, I. Drouzas, J.M. Ulloa, M. Bozkurt, P.M. Koenraad, D.J. Mowbray, H.Y. Liu, M.J. Steer, M. Hopkinson, M.A. Migliorato , ''Role of Segregation in InAs/GaAs Quantum Dot Structures Capped with a GaAsSb Strain Reduction Layer'', Physical Review B 80, 165334 (2009).
  • V. Mlinar, M. Bozkurt, J. M. Ulloa, M. Ediger, G. Bester, A. Badolato, P. M. Koenraad, R. J. Warburton, A. Zunger, ''Structure of quantum dots as seen by excitonic spectroscopy versus structural characterization: Using theory to close the loop'', Physical Review B, 80, 165425 (2009).
  • N. Karayiannis, K. Foteinopoulou, M. Laso, M. Kroger, ''Structure, Dimensions and entanglement statistics of long linear polyethylene chains'', Journal of Physical Chemistry B, 113, 442-455 (2009).
  • N. Karayiannis, K. Foteinopoulou, M. Laso, ''The characteristic crystallographic element norm: a descriptor of local structure in atomistic and particulate systems'', Journal of Chemical Physics, 130, 074704 (2009).
  • R. Cuerdo, Y. Pei, Z. Chen, S. Keller, S. P. Denbaars, F. Calle, U. K. Mishra, ''The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs'', IEEE Electron Device Letters, 30, 209-212 (2009).
  • C. Rivera, E. Muñoz, ''The role of electric field-induced strain in the degradation mechanism of AlGaN/GaN high-electron-mobility transistors'', Applied Physics Letters 94, 053501 (2009).
  • A. Guzmán, E. Luna, F. Ishikawa, A. Trampert, ''The role of Sb and N ions on the morphology and localization of (Ga,In) (N,As) quantum wells'', Journal of Crystal Growth 311,1728-1732 (2009).
  • N. Karayiannis, K. Foteinopoulou, M. Laso, ''The structure of random packings of freely jointed chains of tangent hard spheres '', Journal of Chemical Physics 130, 164908 (2009).
  • P. Corfdir, P. Lefebvre, J. Ristic, P. Valvin, E. Calleja, J.D. Ganière, B. Deveaud-Plédran, ''Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates'', Journal of Applied Physics, 105, 013113 (2009) .
  • R.S. Hoy, K. Foteinopoulou, M. Kroger , ''Topological analysis of polymeric melts: Chain-length effects and fast-converging estimators for entanglement length '', Physical Review E 80, 031803 (2009).
  • A . Bengoechea Encabo, J. Howgate, M. Stutzmann, M. Eickhoff, M.A. Sánchez-García, ''Ultrathin GaN/AlN/GaN solution-gate field effect transistor with enhanced resolution at low source-gate voltage'', Sensors and Actuators B, 142, 304-307 (2009).
  • K. Foteinopoulou, N. Ch. Karayiannis, M. Laso, M. Kroger, M. Mansfield, ''Universal Scaling, Entanglements, and Knots of Model Chain Molecules '', Virtual J. Quant. Info. 9:1 (2009).
  • K. Foteinopoulou, N. Ch. Karayiannis, M. Laso, M. Kroger, M. Mansfield, ''Universal Scaling, Entanglements, and Knots of Model Chain Molecules '', Virtual J. Biol. Phys. 17:1 (2009).
Year 2008
  • S. Fernández-Garrido, Z. Gacevic, E. Calleja , ''A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy '', Applied Physic Letters 93, 191907 (2008) .
  • A.M. Sánchez, R. Prieto, M. Laso, T. Riesgo, ''A Piezoelectric Minirheometer for Measuring the Viscosity of Polymer Microsamples'', IEEE Transactions on Industrial Electronics, 55, 427-436 (2008).
  • J. Grajal, F. Calle, J. Pedrós, J.L. Martínez-Chacón, A. Jiménez, ''AlGaN/GaN-based SAW delay-line oscillators '', Microwave and Optical Technology Letters 50, 2967-2970 (2008) .
  • A. Redondo-Cubero, R. Gago, F. Gonzalez-Posada, U. Kreissig, M.-A. Di Forte Poisson, A.F. Braña, E. Muñoz, ''Aluminium incorporation in AlGaN/GaN heterostructures: a comparative study by ion beam analysis and X-ray diffraction'', Thin Solid Films, 516,8147-8452 (2008).
  • M. Montes, A. Hierro, J. M. Ulloa, A Guzman, B Damilano, M Hugues , M AL Khalfioui, J-Y Duboz, J Massies , ''Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes '', J. Phys. D: Appl. Phys. 41, 155102 (2008).
  • L.R. Bailey, T.D. Veal, P.D.C. King, C.F. Mcconville, J. Pereiro, J. Grandal, M.A. Sánchez-García, E. Muñoz, E. Calleja, ''Band bending at In-rich InGaN surfaces'', Journal of Applied Physics 104, 113716 (2008).
  • G. Franssen, Al. Gorczyca, T. Suski, A. Kaminska, J. Pereiro, E.Muñoz, E. Lliopoulos, A. Georgakilas, S. B. Che, Y. Ishitani, A. Yoshikawa, N.E. Christensen, A. Svane, ''Bowing of the band gap pressure coefficients in InGaN alloys'', Journal of Applied Physics, 103, 033514 (2008).
  • N. Karayiannis, M. Laso, ''Dense and nearly jammed random packings of freely jointed chains of tangent hard spheres'', Physical Review Letters 100, 5, 050602 (2008).
  • K. Bejka, P.R. Edwards, R. W. Martin, S. Fernández-Garrido, E. Calleja, ''Determination of composition and luminescence properties of AlInGaN layers grown by plasma-assisted molecular beam epitaxy'', Journal of Applied Physics 104, 07353 (2008).
  • R. Ranchal, C. Aroca, E. López , ''Domain walls and exchange-interaction in Permalloy/Gd films'', New Journal of Physics,10, 013013 (10 pag) (2008) .
  • S. Fernández-Garrido, A. Redondo-Cubero, R. Gago, F. Bertram, J. Christen, E. Luna, A. Trampert, J. Pereiro, E. Muñoz, E. Calleja , ''Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy '', Journal of Applied Physics, 104, 083510 (2008) .
  • M. F. Romero, A. Jimenez, J. Miguel-Sanchez, A.F. Braña, F. González-Posada, R. Cuerdo, F. Calle, E.Muñoz, ''Effects of N2 plasma pre-treatment on the SiN Passivation of AlGaN/GaN HEMT'', IEEE Electron Devices Letters, 29, 3, 209-211 (2008).
  • E. Sillero, D. López-Romero, A. Bengoechea, M. A.Sóanchez-García, F. Calle , ''Fabrication and stress relief modelling of GaN based MEMS test structures grown by MBE on Si(111)'', Physica status Solidi (c) 5, 1974-1976 (2008).
  • J. Ibañez, S. Hernández, E. Alarcon-Lladó R. Cuscó, L. Artús, S. V. Novikov, C. T. Foxon, E. Calleja, ''Far-infrared transmission in GaN, AlN and AlGaN thin films grown by molecular beam epitaxy'', Journal of Applied Physics, 104, 033544 (2008) .
  • M. Laso, N. Karayiannis, ''Flexible chain molecules in the marginal and concentrated regimes: universal static scaling laws and cross-over predictions'', Journal of Chemical Physics, 128,174901 (2008).
  • A. Nakamura, T. Aoshima,T. Hayashi, S.Gangil, J. Temmyo, A. Navarro, J. Pereiro, E. Muñoz, ''Growth of Nitrogen-Doped MgxZn1-xO for Use in Visible Rejection Photodetectors'', Journal of the Korean Physical Society, 53, 5, 2909-2912 (2008).
  • R. Cuerdo, J. Pedrós, A. Navarro, A.F. Braña, J.L. Pau, E. Muñoz, F. Calle, ''High temperature assessment of nitride-based devices '', Journal of Materials Science: Materials in Electronics,19:189-193 (2008) .
  • R. Cuerdo, F. Calle, A.F. Braña, Y. Cordier, M.Azize, N. Baron, S. Chenot, E.Muñoz , ''High temperature behavior of GaN HEMT devices on Si(111) and sapphire substrates '', Physica Status Solidi c, 5, 1971 (2008) .
  • F. Ishikawa, A. Guzmán-Fernández, O. Brandt, A.Trampert, K. H. PLoog, ''Impact of carrier localization on the photoluminescence characteristics of (Ga,In)(N,As) and (Ga,In)(N,As,Sb) quantum wells'', Journal of Applied Physics,104, 11,113502-113502-5 (2008).
  • J. Miguel-Sanchez, A. Guzman, A. Hierro, E.Muñoz, U. Jahn, A. Trampert, ''Impact of Nitrogen Ion Density on the Optical and Structural Properties of MBE Growh GaInAs/GaAs (100) and (111)B Quantum Wells'', Dilute III-V Nitride Semiconductors and Material Systems Physics and Technology, Series: Springer Series in Materials Science, vol. 105, Editors. Erol, Ayse, ISBN: 978-3-540-74528-0 (2008).
  • M. A. Sánchez-García, M. Garrido, M.López-Vallejo, J. Grajal, ''Implementing FFT-based digital channelized receivers on FPGA platforms'', IEEE Transactions on Aerospace and Electronic Systems, 44,4, 1567-1585, ISSN: 0018-9251 (2008).
  • A. Arranz, C. Palacio, D. García-Fresnadillo, G. Orellana, A. Navarro, E. Muñoz , ''Influence of Surface Hydroxylation on 3-Aminopropyltriethoxysilane Growth Mode during Chemical Functionalization of GaN Surfaces: An Angle-Resolved X-ray Photoelectron Spectroscopy Study'', Langmuir, 24, 8667-8671 (2008).
  • S. Fernández-Garrido, G. Koblmäller, E.Calleja, J. S. Speck , ''In-situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction '', Journal of Applied Physics, 104, 033541(2008) .
  • J.M. Ulloa, P.Offermans, P.M.Koenraad , ''InAs quantum dot formation studied at the atomic scale by cross-sectional scanning tunneling microscopy '', Self-Assembled -Assembled semiconductor Nanostructures for new Devices in photonics and Electronics, Ed. Elsevier (2008) .
  • J. M. Ulloa, S. Anantathanasarn, P.J. van Veldhoven, P.M. Koenraad, R. Nötzel, ''Influence of an ultrathin GaAs interlayer on the structural properties of InAs/InGaAsP/InP (100) quantum dots investigated by cross-sectional scanning tunneling microscopy '', Applied Physics Letters, 92, 083103-1 (2008) .
  • J. Pereiro, J.L Pau, C. Rivera, A Navarro, E. Muñoz, R. Czernecki, G. Targowski, P. Prystawko, M. Krysko, M. Leszczynski, T. Suski, ''InGaN growth applied to the fabrication of photodetector devices '', Nitrides and dilute nitrides: Growth, physics and devices, J.Miguel-Sanchez editor, Research Signpost, ISBN 978-81-7895-250-5, 265-288 (2008).
  • C. A. Barrios, M.J. Bañuls, V. Gonzalez-Pedro, K.B. Gylfason, B. Sánchez, A. Griol, A. Maquieira, H. Sohlström, M. Holgado, R. Casquel , ''Label-free optical biosensing with slot-waveguides'', Optics Letters, 33, 7, 708-710 (2008).
  • E. Gallardo, S. Lazic, J.M. Calleja, J. Miguel Sánchez, M. Montes, A. Hierro, R. Gargallo-Caballero, A. Guzman, E. Muñoz, A.M. Teweldeberhan, S. Fahy, ''Local vibration modes and nitrogen incorporation in AlGaAs: N layers'', Physica status solidi (c),5,2345-2348 (2008).
  • M. Maicas, R. Ranchal, C. Aroca, P. Sánchez, E. López , ''Magnetic properties of permalloy multilayers with alternating perpendicular anisotropies '', European Physical Journal B, 62, 267-270 (2008) .
  • M. Laso, ''Modeling Smart Materials'', Shape-Memory Alloys and Effects: Types, Functions, Modeling, and Applications. Smart Materials, M. Schwartz, ed., CRC Press,190-197 (2008).
  • F. Coldren, K. Foteinopoulou, D. Carroll, M. Laso, ''Modeling the effect of cell-associated polymeric fluid layers on force spectroscopy measurements. Part I: model development'', Langmuir, 24, 9575-958 (2008).
  • F. Coldren, K. Foteinopoulou, W. Verbeeten, D. Carroll, M. Laso, ''Modeling the effect of cell-associated polymeric fluid layers on force spectroscopy measurements. Part II: model development'', Langmuir, 24, 9588-959 (2008).
  • N. Karayiannis, M. Laso, ''Monte Carlo Scheme for Generation and Relaxation of Dense and Nearly Jammed Random Structures of Freely Jointed Hard-Sphere Chains'', Macromolecules 2008, 41, 1537-1551 (2008).
  • S. Ghosh, C. Rivera, J.L. Pau, E. Muñoz, O. Brandt, H.T. Grahn, ''Narrow-band photodetection based on M-plane GaN films'', Physica status solidi (a) 205, 1100-1102 (2008).
  • J. Miguel-Sánchez, ''Nitrogen in seminconductors'', Nitrides and dilute nitrides: Growth, physics and devices, J.Miguel-Sanchez editor, Transworld Research Signpost, ISBN 978-81-7895-250-5, 265-288 (2008).
  • C. Rivera, E. Muñoz, ''Observation of giant photocurrent gain in highly doped (In,Ga)N/GaN MQW-based photodiodes '', Applied Physics Letters, 233510 (1)- 233510(3) (2008) .
  • J. Ristic, E. Calleja, S.Fernández-Garrido, L. Cerutti, A.Trampert, U. Jahn, K.H. Ploog , ''On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy '', Journal of Crystal Growth, 310, 4035 (2008).
  • A. Hierro, J.M. Ulloa, J. Miguel-Sánchez, A. Guzmán, A. Trampert, E. Tournié, ''Photo- and Electro-luminescence from GaInNAs/GaAs single quantum wells and light emitting diodes'', Nitrides and Dilute Nitrides: Growth, Physics and Devices. Editores: Transworld Research ISBN 978-81-7895-250-5,77-98 (2008) .
  • C. Rivera, ''Photodetectors based on quantum-well structures: theory, properties and novel concepts '', Edit. Alfred Ruyter & Harper OMahoney, Quantum Wells: Theory, Fabrication and Applications, 1-44 . Nova Science Publishers, Inc. Hauppauge, NY, USA (2008) .
  • J. Segura, N. Garro, A. Cantarero, J. Miguel-Sánchez, A. Guzmán, A. Hierro, ''Photoluminescence and magnetophotoluminescence studies in GaInNAs/GaAs quantum wells'', AIP Conf. Proc, 893, 425-426, Physics of semiconductors: 28th International Conference on the Physics of Semiconductors - ICPS 2006; DOI:10.1063/1.2729947 (2008).
  • S. Fernández-Garrido, J. Pereiro, F. González-Posada, E. Muñoz, E. Calleja, A. Redondo-Cubero, R. Gago, ''Photoluminiscence enhancement in quaternay III-nitrides alloys grown by molecular beam epitaxy with increasing Al content'', Journal of Applied Physics, 103, 4, 046104-1/3 (2008).
  • M.M. Sanz, I. Tanarro, ''Plasma basic concepts and nitrogen containing plasmas '', Nitrides and dilute nitrides: Growth, physics and devices. Book Chapter. Editor: Research Signpost, ISBN 81-7895-250-5, pag.15-46 (2008) .
  • S. Fernández-Garrido, E. Calleja, A. Redondo-Cubero, R. Gago, J. Pereiro, F. González-Posada, E. Muñoz, ''Properties and growth by Plasma Assisted Molecular Beam Epitaxy of Quaternary III-nitrides'', Nitrides and dilute nitrides: Growth, physics and devices, Book Chapter, Editors: Javier Miguel Sánchez-Transworld Research Network (2008).
  • S. Lazic, E. Gallardo, J.M. Calleja, F. Agullo-Rueda, J. Grandal, M.A. Sanchez-Garcia, E. Calleja , ''Raman scattering by coupled plasmon-LO phonons in InN nanocolumns '', Physica Status Solidi (c), 5, 6, 1562-1564 (2008) .
  • S. Lazic, E. Gallardo, J.M. Calleja, F. Agullo-Rueda, J. Grandal, M.A. Sanchez-Garcia, E. Calleja, ''Raman scattering by longitudinal optical phonons in InN nanocolumns grown on Si(111) and Si(001) substrates '', Physica E: Low-Dimensional Systemas & Nanostructures, 40, 2087-2090 (2008) .
  • C.A. Barrios, M. Holgado, O. Guarneros, B. Sánchez, K. Gylfason, R. Casquel, H. Sohlström, ''Reconfiguration of microring resonators by liquid adhesion'', Applied Physics Letters, 93, 20, 203114 (2008) .
  • E. Gallardo, S. Lazic, J.M. Calleja, J. Miguel-Sánchez, M. Montes, A. Hierro, R. Gargallo-Caballero, A. Guzmán, E. Muñoz, A.M. Teweldeberhan, S.Fahy, ''Resonant Raman study of local vibrational modes in AlGaAsN layers'', Physica E, 40, 2084 - 2086 (2008) .
  • A.M. Teweldeberhan, G. Stenuit, S. Fahy, E. Gallardo, S. Lazic, J.M. Calleja, J. Miguel-Sáchez, M. Montes, A. Hierro, R. Gargallo-Caballero, A. Guzman, E. Muñoz, ''Resonant Raman-active localized vibrational modes in AlyGa{1-y}NxAs{1-x} alloys: Experiment and first principles calculations'', Physical Review B 77,155208- 155213 (2008) .
  • K.B. Gylfason, B. Sánchez, A. Griol, C.A. Barrios, H. Sohlstrom, M.J. Banuls, V. Gonzalez-Pedro, A. Maquieira, M. Holgado, R. Casquel, D. Hill, G. Stemme, ''Robust Hybridization of Nanostructured Buried Integrated Opticalwaveguide Systems With On-Chip Fluid Handling For Chemical Analysis'', Twelfth International Conference on Miniaturized Systems for Chemistry and Life Sciences, San Diego, California, USA ISBN: 978-0-9798064-1 (2008).
  • J. M. Ulloa, P. M. Koenraad, D. Fuster, L. González, Y. González, M. U. González , ''Self-assembling processes involved in the molecular beam epitaxy growth of stacked InAs/InP quantum wires'', Nanotechnology 19, 445601 (2008).
  • M. Nielbelschütz, V. Cimalla, O. Ambacher, T. Machleidt, K.-H. Franke, J. Ristic, J. Grandal, M.A. Sanchez-García, E.Calleja , ''Space charged region in GaN and InN nanocolumns investigated by Atomic Force Microscopy '', Physica status solidi (c), Vol 5, nº 6, 1609-1611 (2008) .
  • U. Jahn, E. Calleja, J. Ristic, A. Trampert, C. Rivera , ''Spatially Resolved Luminescence Spectroscopy of Single GaN/(Al,Ga)N Quantum Disks '', Physica status solidi (c), 2164-2166 (2008) .
  • F. Coldren, K. Foteinopoulou, D. Carroll, M. Laso, ''Spectroscopy measurements. Part I: model development'', Langmuir, 24, 9588-959 (2008).
  • F. Coldren, K. Foteinopoulou, D. Carroll, M. Laso, ''Spectroscopy measurements. Part II: model development'', Langmuir, 24, 9575-958 (2008).
  • J.M. Ulloa, P.M.Koenraad, M. Hopkinson , ''Structural properties of GaAsN/GaAs quantum wells studied at the atomic scale by cross-sectional scanning tunnelling microscopy '', Applied Physics Letters, 93, 083103 (2008) .
  • A. Redondo-Cubero, R. Gago, M. F. Romero, A. Jiménez, F. González-Posada, A.F. Braña, E. Muñoz, ''Study of SiNx:Hy passivant layers for AlGaN/GaN high electron mobility transistors'', Phys. Stat. Sol. (c), 5, 2, 518-521 (2008).
  • R. Cuerdo, Y. Pei, F. Recht, N. Fichtenbaum, S. Keller, S. P. Denbaars, F. Calle, U. K. Mishra, ''Temperature-dependent High-Frequency Performance of Deep Submicron Ion-Implanted AlGaN/GaN HEMTs'', Physica Status Solidi (c ), 5, 2994-2997 (2008) .
  • D. Ciudad Rio-Pérez, P.C. Arribas, C.Aroca, P. Sánchez, ''Testing Thick Magnetic Shielding Effect on a New Low Frequency RFIDs System'', IEEE Transactions on Antennas and Propagation 8, 56, 12, 3838-3843 (2008).
  • R. Gargallo-Caballero, J. Miguel-Sánchez, Á.Guzmán, A. Hierro, E. Muñoz, ''The effect of rapid thermal annealing on the photoluminescence of InAsN/InGaAs dot-in-a-well structures,'', Journal of Physics D: Applied Physics, 41, 065413 (2008) .
  • R. Gargallo-Caballero, J. Miguel-Sánchez, Á.Guzmán, A. Hierro, E. Muñoz, ''The effect of the individual species of the N plasma on the characteristics of InAsN quantum dots grown by MBE'', Materials Science and Engineering B, 147,118 - 123 (2008).
  • C. Israel, L. Granja, T. M. Chuang, L. E. Hueso, D. Sánchez, J. L. Prieto, P. Levy, A. De Lozanne, N. D. Mathur , ''Translating reproducible phase-separated texture in manganites into reproducible two-state low-field magnetoresistance: An imaging and transport study'', Phys. Rev B 78, 054409 (2008).
  • K. Foteinopoulou, N. Ch. Karayiannis, M. Laso, M. Kröger, M. Mansfield, ''Universal Scaling, Entanglements, and Knots of Model Chain Molecules '', Physical Review Letters,101, 265702 (2008).
  • E. Luna, A. Trampert, J. Miguel-Sánchez, A. Guzmán, K.H. Ploog, ''Vertical composition fluctuations in (Ga,In)(N,As) quantum wells grown on vicinal (1 1 1)B GaAs'', Journal of Physics and Chemistry of Solids, 69, 343 - 346 (2008).
  • R.Casquel, M. Holgado, A. Lavin, C. A. Barrios, C. Molpeceres, M. Morales, J. L. Ocaña., ''Vertical resonant microcavities based on pillars analyzed by beam profile ellipsometry and reflectometry'', Eurosensors XII,1577-1580, ISBN: 978-3-00-025217 (2008).
Year 2007
  • E. Muñoz, ''(Al,In,Ga,Al)N- based photodetectors. Some materials issues'', Physica Status Solidi (b), 244, 2683-2696 (2007).
  • J. Grandal, M.A. Sanchez-Garcia , E. Calleja , E. Luna , A. Trampert, ''Accommodation mechanism of InN nanocolumns grown on Si (111) substrates by molecular beam epitaxy'', Applied Physics Letters, 91, 021902-021904 (2007) .
  • J. M. Ulloa, C. Celebi, P. M. Koenraad, A. Simon, E. Gapihan, A. Letoublon, N. Bertru, I. Drouzas, D.J. Mowbray, M.J. Steer, M. Hopkinson, ''Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots'', Journal of Applied Physics, 101, 081707-081712 (2007).
  • U. Jahn, J. Ristic, E.Calleja, ''Cathodoluminescence of GaN/(Al,Ga)N nanocolumns containing quantum disks'', Applied Physics Letters, 90, 161117-161119 (2007).
  • J. Grandal, M.A. Sánchez-García, E. Calleja, ''Characterization of In-polar indium nitride layers grown by molecular beam epitaxy on Si (111) substrates'', Nitrides and dilute nitrides: Growth, Characterization and devices Research SignPost,editor: Javier Miguel Sánchez, ISBN: 978-81-7895-250-5 (2007).
  • L. Ouattara, J. M. Ulloa, A. Mikkelsen, E. Lundgren, P. M. Koenraad, M. Borgström, L. Samuelson, W. Seifert, ''Correlation lengths in stacked quantum dot systems: Experiment and Theory'', Nanotechnology,18,145403 -145406 (2007).
  • S. Lazic, E. Gallardo, J.M. Calleja, F. Agullo-Rueda, M.A. Sanchez-Garcia, J. Grandal, E. Calleja, A. Trampert, ''Coupled longitudinal optical phonon-plasmon modes in InN nanocolumns'', AIP Conference Proceedings 893, 287 (2007).
  • Wierts, J.M. Ulloa, C. Celebi, P.M. Koenraad, H. Boukari, L. Maingault, R. André, H. Mariette, ''Cross-sectional scanning tunnelling microscopy study on II-VI multilayer structures'', Applied Physics Letters 91,161907-161909 (2007).
  • C. A. Barrios, B. Sánchez, K.B. Gylfason, A. Griol, H. Sohlström, M. Holgado, R. Casquel , ''Demonstration of slot-waveguide structures on silicon nitride/silicon oxide platform'', Optics Express, vol.15, no.11, 6846-6856 (2007).
  • J. Pereiro, C. Rivera, J.L. Pau, A. Navarro, S. Fernández-Garrido, S. Grzanka, M. Leszczynski, E. Muñoz , ''Design of InGaN based photodetectors by internal field engineering '', Conferences Proceedings 2007 Spanish Conference, 296-299 (2007) .
  • C. Rivera, E. Muñoz, O. Grandt, H.T. Grahn, ''Detection of the optical polarization angle with bandplass characteristics based on M-plane GaN photodetectors'', Applied Physics Letters, 91, 203514-203516 (2007)Applied Physics Letters, 91, 203514-203516 (2007).
  • J. M. Ulloa, P. M. Koenraad, E. Gapihan, A. LéToublon, N. Bertru , ''Double capping of MBE grown InAs/InP quantum dots studied by cross-sectional scanning tunneling microscopy '', Applied Physics Letters, 91, 073106-073109 (2007) .
  • C. Rivera, P. Misra, J. L. Pau, E. Muñoz, O. Brandt, H. T. Grahn, K. H. Ploog, ''Electrical and optical characterization of M-plane GaN films grown on LiAlO2 substrates'', Physica Status Solidi (c), 4, 2548-2551, 4 páginas (2007).
  • M. Niebelschütz, V. Cimalla, O. Ambacher, T. Machleidt, K.H. Franke, J. Ristic, J. Grandal, M.A. Sánchez-García, E. Calleja, ''Electrical characterization of Group III-Nitride nanocolumns with Scanning Force MicroscopyElectrical characterization of Group III-Nitride nanocolumns with Scanning Force Microscopy'', Modern Research and Educational Topics in Microscopy, N 3, Eds. A. Méndez-Vilas, J. Díaz. Formatex, 560-567 (2007).
  • M. Niebelschütz, V. Cimalla, O. Ambacher, T. Machleidt, J. Ristic, E. Calleja,, ''Electrical performance of Group III nitride nanocolumns'', Physica E 37, 200 (2007).
  • A. Verhulst, G.F. Iriarte, P.M.Vereecken, M.Karen, ''Elongate Nanostructure Semiconductor Device '', European Patent Office, EPO-05077991.7. Publication Date: 07/04/2007.
  • M. González-Guerrero, J.L Prieto, D. Ciudad, P. Sánchez, C.Aroca , ''Engineering the magnetic properties of amorphous (Fe80Co20)80B20 with multilayers of variable anisotropy direction '', Applied Physics Letters, 90, 162501-1, 62501-3 (2007) .
  • E. Calleja, J. Grandal, M.A. Sánchez-García, M. Niebelschütz, V. Cimalla, O. Ambacher , ''Evidence of electron accumulation at non-polar surfaces of InN nanocolumns'', Applied Physics Letters, 90, 262110-262112 (2007).
  • J. Pedrós, Y. Takagaki, T. Ive, M. Ramsteiner, O. Brandt, U. Jahn, K. H. Ploog, F. Calle, ''Exciton impact-ionization dynamics modulated by surface acoustic waves in GaN'', Physical Review B, 75, 115305 (2007) .
  • W. Eerenstein, F.D. Morrison, F. Sher, J.L. Prieto, J.P. Attfield, J.F. Scott, N.D. Mathur , ''Experimental difficulties and artefacts in multiferroic and magnetoelectric thin films of BiFeO3, Bi0.6Tb0.3La0.1FeO3 and BiMnO3 '', Phil. Mag. Letters Vol 87, Nº 3-4, 249-257 (2007) .
  • J. L. Pau, R. Mcclintock, K. Minder, C. Bayram, P.Kung, M.Razegui, E.Muñoz, D.Silversmith, ''Geiger-mode operation of back-illuminated GaN avalanche photodiodes'', Applied Physics Letters, 91, 041104-041107 (2007).
  • W.Eerenstein, M. Wiora, J.L.Prieto, J.F.Scott, N.D.Mathur. , ''Giant sharp and persistent converse magnetoelectric effects in multiferroic epitaxial heterostructures '', Nature Materials, vol 6, 347-351 (2007) .
  • Z. Bougrioua, P. Gibart, E. Calleja, U. Jahn, A. Trampert, J. Ristic, M. Utrera, G. Nataf, ''Growth of free-standing GaN using Pillar-Epitaxial Lateral Overgrowth from GaN nanocolumns'', Journal of Crystal Growth, 309, 113-115 (2007).
  • E. Calleja, J. Ristic, S. Fernández-Garrido, L. Cerutti, M. A. Sánchez-García, J. Grandal, A. Trampert, U. Jahn, G. Sanchez, A. Griol, B. Sanchez, ''Growth, morphology and structural properties of group-III-nitride nanocolumns and nanodisks '', Physica Status Solidi (b), 244, 2816-2837 (2007) .
  • G. Koblmüller, F. Wu, T. Mates, J.S. Speck, S. Fernandez-Garrido, E. Calleja, ''High electron mobility GaN grown under N-rich conditions by plasma-assisted molecular beam epitaxy'', Applied Physics Letters, 91, 221905-221907 (2007).
  • J. L. Prieto , ''Hopes for growth in Spain '', Nature 449, 1086 (2007).
  • G. Koblmüller, J.S. Speck , S. Fernandez-Garrido, E. Calleja, ''In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001) GaN'', Applied Physics Letters, 91, 161904-161906 (2007).
  • E. Calleja, S. Lazic, J. Sanchez-Páramo, F. Agulló-Rueda, L. Cerutti, J. Ristic, S. Fernández-Garrido, M.A. Sánchez-Garcia, J. Grandal, E. Calleja, A. Trampert, U. Jahn, ''Inelastic light scattering spectroscopy of semiconductor nitride nanocolumns '', Physica Status Solidi (b), 244, 2838-2846 (2007).
  • M. González-Guerrero, J.L Prieto, P. Sánchez, C.Aroca, ''Influence of the deposition-induced stress on the magnetic properties of sputtered magnetostrictive amorphous (Fe80Co20)80B20'', Journal of Applied Physics, 102, 123903-12906 (2007).
  • M. González-Guerrero, J.L Prieto, P. Sánchez, C.Aroca , ''Influence of the deposition-induced stress on the magnetic properties of sputtered magnetostrictive amorphous (Fe80Co20)80B20 multilayers with orthogonal anisotropy '', Journal of Applied Physics, 102, 123903-12906 (2007) .
  • C. Rivera, P. Misra, J. L. Pau, E. Muñoz, O. Brandt, H. T. Grahn, K. H.Ploog, ''Intrinsic photoluminescence of M-plane GaN films on LiAlO2 substrates'', Journal of Applied Physics, 101, 053527-053533 (2007).
  • A. Navarro, C. Rivera, R. Cuerdo, J.L. Pau, J. Pereiro, E. Muñoz, ''Low frequency noise in InGaN/GaN MQW-based photodetector structures '', Physica Status Solidi (a), 204, 262-266 (2007).
  • C. Rivera, P. Misra, J.L. Pau, E. Muñoz, O. Brandt, H.T. Grahn, K.H. Ploog, ''M-plane GaN-based dichroic photodetectors'', Physica Status Solidi (c), 4 , 86-89 (2007).
  • A. Navarro, C. Rivera, R. Cuerdo, J.L. Pau, J. Pereiro, F. Calle, E. Muñoz , ''Noise study in photodiodes based on InGaN/GaN MQW'', 2007 Spanish Conference on Electron Devices 321-324, ISBN: 1-4244-0868-7 (2007) .
  • S. Valdueza-Felip, F.B. Naranjo, M. González-Herráez, H. Fernández, J. Solis, S. Fernández, F. Guillot, E. Monroy, J. Grandal, M.A. Sánchez-García , ''Novel nitride - based materials for nonlinear optical signal processing applications at 1.5 µm Novel nitride - based materials for nonlinear optical signal processing applications at 1.5 µm '', IEEE Inter. Symposium on Intelligent Signal Processing WISP (2007) .
  • F. Chinesta, A. Ammar, A. Falcó, M. Laso, ''On the reduction of stochastic kinetic theory models of complex fluids'', Modelling and Simulation in Materials Science and Engineering,15, 639-653 (2007).
  • D. Ciudad, J.L.Prieto, I. Lucas C. Aroca, P. Sánchez, ''Optimization of magnetic properties of electrodeposited CoP for sensor applications'', Journal of Applied Physics, 101, 043907-1, 043907-5 (2007) .
  • S. Lazic, E. Gallardo, J.M. Calleja, F. Agullo-Rueda, J. Grandal, M.A. Sanchez-Garcia, E. Calleja, E. Luna, A. Trampert, ''Phonon-plasmon coupling in electron surface accumulation layers in InN nanocolumns '', Physical Review B, 76, 205319-205321 (2007).
  • R. Gargallo-Caballero, M. Sanz, A. Guzmán, E. Calleja, E. MuÑOz , ''Quantum Dot Infrared Photodetector for mid-infrared detection at high temperatures'', 2007 Spanish Conference on Electron Devices IEEE Proceedings, ISBN: 1-4244-0868-7 (2007).
  • J. Miguel-Sánchez, A. Guzmán, U. Jahn, A. Trampert, J. M. Ulloa, E. Muñoz, A. Hierro, ''Role of ionized nitrogen species in the optical and structural properties of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitax'', Journal of Applied Physics, 101, 1035261-10352616 (2007).
  • E. Sillero, D. López-Romero, F. Calle, M. Eickhoff, J. F. Carlin, N. Grandjean, M. Ilegems, ''Selective etching of AlInN/GaN heterostructures for MEMS technology'', Microelectronic Engineering, 84, 1152-1156 (2007).
  • C. A. Barrios, K.B. Gylfason, B. Sánchez, A. Griol, H. Sohlström, M. Holgado, R. Casquel , ''Slot-waveguide biochemical sensor'', Optics Letters, vol. 32, no. 21,3080-3082 (2007).
  • C. Rivera, U. Jahn, T. Flissikowski, J.L. Pau, E. Muñoz, H.T. Grahn, ''Strain-confinement mechanism in mesoscopic quantum disks based on piezoelectric materials'', Physical Review B (seleccionado por el Virtual Journal of Nanoscale Science & Technology), 75, 0453163-0453173 (2007).
  • C. Rivera, P. Misra, J.L. Pau, E. Muñoz, O. Brandt, H.T. Grahn, K.H. Ploog , ''Strained M-plane GaN for polarization-sensitive applications '', Conferences Proceedings 2007 Spanish Conference, 250-253 .
  • J. M. Ulloa, I. W. D. Drouzas, P. M. Koenraad, D.J. Mowbray, M.J. Steer, H. Y. Liu, M. Hopkinson , ''Suppression of InAs/GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer'', Applied Physics Letters, 90, 213105-213108 (2007).
  • F. González-Posada, J.A. Bardwell, S. Moisa, S. Haffouz And H. Tang, A.F. Braña, E. Muñoz , ''Surface cleaning and preparation in AlGaN/GaN-based HEMT processing as assessed by X-ray photoelectron spectroscopy'', Applied Surface Science, 53, 14, 6185-6190 (2007).
  • R. Ranchal, C. Aroca, M. Maicas, E. Lopez, ''Temperature dependence of the magnetic and electrical properties of Permalloy/gadolinium/Permalloy thin films '', Journal of Applied Physics, 102, 053904-1 053904-3 (2007).
  • S. Ghosh, C. Rivera, J. L. Pau, E. Muñoz, O. Brandt, H. T. Grahn, ''Very narrow-band ultraviolet photodetection based on strained M-plane GaN films'', Applied Physics Letters, 90, 091110-091112 (2007).
Year 2006
  • J. Miguel-Sánchez, A. GuzmáN, J.M. Ulloa, A. Hierro, E. Muñoz, '' New Challenges in the growth of diluted nitrides'', Focus on Crystal growth research, Editor: George Karas. Nova Science Publishers, 2006. ISBN: 1-59454-540-5.
  • L. Cerutti, J. Ristic, S. Fernández-Garrido, E. Calleja, A. Trampert, K.H. Ploog, S. Lazic, J.M. Calleja, '' Wurtzite GaN Nanocolumns Grown on Si (001) by Molecular Beam Epitaxy: an Open Door to Optoelectronics Integration on Si'', Applied Physics Letters 88, 213114 (2006).
  • B. Pereira LO, A. J. Haslam, C. S. Adjiman, M.Laso, ''A method for the systematic estimation of parameters for a stochastic reptation model in Multiscale modelling for polymer properties, E.A. Perpète, M. Laso, eds., '', Computer-Aided Chemical Engineering 22, 69-84, Elsevier ISBN 0444521879 (2006).
  • L. Pérez, I. Lucas, C. Aroca, P. Sánchez, E. López, M.C. Sánchez, ''Analytical model for the sensitivity of a fluxgate sensor'', Sensors and Actuators A 130-131, 142-146 (2006).
  • J. Miguel-Sanchez, U. Jahn, A. Guzmán, E. Muñoz, ''Cathodoluminescence investigations of GaInAs on GaAs(111)'', Applied Physics Letters 89, 231901 (2006) .
  • J.M. Ulloa, A. Hierro, J. Miguel-Sánchez, A. Guzmán, J.M. Chauveau, A. Trampero, E. Tournié, E. Calleja, ''Correlation between quantum well morphology, carrier localization, and the opto-electronic properties of GaInNAs/GaAs light emitting diodes'', Semiconductor Science and Technology 21, 1047-1052 (2006).
  • M. Laso, N. Jimeno, L.M. Muneta, M. Müller, ''Determination of rotary diffusivity of poly-(n-propyl isocyanate) by molecular dynamics'', Journal of Chemical Physics, 125, 244901 (2006).
  • R. Ranchal, C Aroca, M.C. Sánchez, P. Sánchez, E. López, ''Effective exchange-coupling in Py/Gd films'', Physica Status Solidi (A) 203, 1415-1419 (2006).
  • C.A. Barrios, ''Electrooptic Modulation of Multi Silicon-on-Insulator Photonic Wires, '', IEEE Journal of Lightwave Technology, 24, no. 5, 2146-2155 (2006).
  • M.A. Sanchez-Garcia, J. Grandal, E. Calleja, S. Lazic, J.M. Calleja, A. Trampert,, ''Epitaxial growth and characterization of InN nanorods and compact layers on silicon substrates'', Physica Status Solidi (b), 243, 7, 1490 (2006)..
  • S. Dhar, T. Kammermeier, A. Ney, L. Pérez, K.H. Ploog, A. Melnikov, A.D. Wieck, ''Ferromagnetism and colossal magnetic moment in Gd-focused ion-beam-implanted GaN'', Applied Physics Letters 89, 062503 (2006).
  • M. Laso , L.M. Muneta, M. Müller, V. Alcázar, F. Chinesta, A. Ammar, ''Hierarchical Approach to Flow Calculations for Polymeric Liquid Crystals in Multiscale modelling for polymer properties, E.A. Perpète, M. Laso, eds., '', Computer-Aided Chemical Engineering, 22, 359-401, Elsevier ISBN 0444521879 (2006).
  • J. Pedrós, R. Cuerdo, R. Lossy, N. Chaturvedi, J. Würfl, F. Calle , ''High temperature characterization of Pt-based Schottky diodes on AlGaN/GaN heterostructures'', Physica Status Solidi (c) c) 3, 1709 (2006)..
  • M. Laso, J. Ramirez, ''Implicit Micro-Macro Methods in Multiscale modelling for polymer properties, E.A. Perpète, M. Laso, eds., '', Computer-Aided Chemical Engineering, 22, 85-108, Elsevier ISBN 0444521879 (2006).
  • J. Ramirez , M. Laso, ''Implicit Viscoelastic Calculations using Brownian Configuration Fields in Multiscale modelling for polymer properties, E.A. Perpète, M. Laso, eds., '', Computer-Aided Chemical Engineering, 22, 161-180, Elsevier ISBN 0444521879 (2006).
  • R. Ranchal, C Aroca, M. C. Sánchez, P. Sánchez, E. López, ''Improvement of the structural and magnetic properties of Permalloy/Gadolinium multilayers with Mo spacers'', Applied Physics A , 82 , 697- 701 (2006).
  • R. Ranchal, C. Aroca, E. López, ''In-plane magnetotransport properties of Permalloy/Gadolinium/Permalloy trilayers'', Journal of Applied Physics 100, 103903 (2006).
  • L. Perez, G.S. Lau, S. Dhar, O. Brandt, K.H. Ploog, ''Magnetic phases and anisotropy in Gd-doped GaN'', Physical Review B 74, 195207 (2006).
  • J. Miguel-Sánchez, A. Guzmán, J. M. Ulloa, M. Montes, A. Hierro, E. Muñoz, ''MBE growth and processing of diluted nitride quantum well lasers on GaAs(111)B'', Microelectronics Journal 37, 1442-1445 (2006).
  • J. Ramirez , M. Laso, ''Micro-macro 3D calculations of viscoelastic flow in Multiscale modelling for polymer properties, E.A. Perpète, M. Laso, eds., '', Computer-Aided Chemical Engineering, 22, 123-142, Elsevier ISBN 0444521879 (2006).
  • M. Laso, N. Karayiannis, M. Müller, ''Min-map Bias Monte Carlo for Chain Molecules: Biased Monte Carlo Sampling Based on Bijective Minimum-to-Minimum Mapping'', Journal of Chemical Physics, 125, 164108 (2006).
  • M. Laso, N. Jimeno, C. Alemán, ''Monomer Solubility and Diffusion in Confined Polyethylene by Mapping Atomistic Trajectories onto the Macroscopic Diffusion Equation in Multiscale modelling for polymer properties, E.A. Perpète, M. Laso, eds., '', Computer-Aided Chemical Engineering, 22, 183-200, Elsevier ISBN 0444521879 (2006).
  • J. Miguel-Sánchez, A. Guzmán, J.M. Ulloa, A. Hierro, E. Muñoz, ''New Challenges in the growth of diluted nitrides'', Nova Science Publishers, Nova Science Publishers, 2006. ISBN: 1-59454-540-5.
  • O. de Abril, M.C. Sánchez , C. Aroca, ''New closed flux stripe domain model for weak perpendicular magnetic anisotropy films'', Applied Physics Letters 89, 172510-(1-3) (2006).
  • M. Bonito, M. Laso, M. Picasso, ''Numerical Simulation of 3D Viscoelastic Flows with Free Surfaces'', Journal of Computational Physics, 215 (2) 691-716 (2006).
  • J. Miguel-Súnchez, A. Guzmún, U. Jahn, E. Luna, E. Muñoz , ''Patterning by rapid thermal annealing of GaAs layers grown on diluted nitride QWs'', Microelectronics Journal 37, 1552-1556 (2006) .
  • C. Rivera, J.L.Pau, E. Muñoz, T. Ive, O. Brandt, ''Photocapacitance characteristics of (In,Ga)N/GaN MQW structures'', Physica Status Solidi (c), 3, 1978-1982 (2006) .
  • C. Rivera, J.L. Pau, E. Muñoz, , ''Photocurrent gain mechanism in schottky barrier photodiodes with negative average electric field, '', Applied Physics Letters 89, 263505 (2006).
  • C. Rivera, J.L Pau, A. Navarro, E. Muñoz, ''Photoresponse of (In,Ga)N/GaN multiple-quantum well structures in the visible and UVA ranges'', IEEE Journal of Quantum Electronics, 42, 1, 51-58 (2006) .
  • C. Rivera, J. L. Pau, E. Muñoz, P. Misra, O. Brandt, HT. Grahn, K.H.Ploog, ''Polarization-sensitive photodetectors based on M-plane GaN grown on LiAlO2 substrates'', Applied Physics Letters, 88, 213507 (2006) .
  • M. Plaza, L. Pérez, M.C. Sánchez, ''Reducing the losses in sintered permally by addition of ferrite'', Journal of Magnetism and Magnetic Materials 309, 207-211 (2006).
  • R. Gargallo, J. Miguel-Sánchez, A. Guzmán, U. Jahn, E. Muñoz , ''Self-organized GaAs patterns on misoriented GaAs (1 1 1)B substrates using dilute nitrides by molecular beam epitaxy '', Microelectronics Journal 37 (12), 1547-1551 (2006).
  • C.A. Barrios, M. Lipson, ''Silicon photonic read only memory, '', IEEE Journal of Lightwave Technology, 24, no. 7, 2898-2905 (2006).
  • D. Pastor, R. Cuscó, L. Artus, G. Gonzalez-Diaz, E. Iborra, J. Jimenez, F. Peiró, E. Calleja , ''The effect of substrate on high-temperature annealing of GaN epilayers: Si vs sapphire'', Journal of Applied Physics 100, 043508 (2006)..
  • O. de Abril, M.C. Sánchez , C. Aroca, ''The effect of the in-plane demagnetizing field on films with weak perpendicular magnetic anisotropy'', Journal of Applied Physics 100, 063904-(1-8) (2006).
  • C.A. Barrios, ''Ultrasensitive Nanomechanical Photonic Sensor based on Horizontal Slot-Waveguide Resonator'', IEEE Photonics Technology Letters, 18, no. 22, 2419-2421 (2006).
Year 2005
  • M. Zamfirescu, M. Abbarch, M. Gurioli, A. Vinattieri, J. Ristic, E. Calleja, '' Carrier Dynamics and Recombination in GaN Quantum Discs Embedded in AlGaN Nanocolumns'', Phys. stat. solidi (c) 2, n° 2, 822-825 (2005).
  • F. Calle, J. Pedrós, T. Palacios, J. Grajal, ''Acoustic wave devices on III-V nitrides'', Physica status solidi (c )2, 976-983 (2005).
  • J. Ristic, E. Calleja, A. Trampert, S. Fernández-Garrido, U. Jahn, K.H. Ploog, ''Columnar AlGaN/GaN Nanocavities with AIN/GaN Bragg Reflectors Grown by Molecular Beam Epitaxy on Si(111)'', Physical Review Letters, 94, 146102(2005).
  • L. Artús, R. Cuscó, D. Pastor, G. González-Díaz, S. Fernández-Garrido, E. Calleja, ''Effect of the Implantation Temperature on Lattice Damage of Be+-Implanted GaN'', Semiconductor Science and Technology, 20,374-377 (2005).
  • Z. Bougrioua, M. Azize, A. Jiménez, A. F. Braña, P. Lorenzini, B. Beaumonts, E. Muñoz, P. Gibart, ''Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs'', Phys. stat. sol. (c), 15 / DOI 10.1002 (2005).
  • J. Ristic, E. Calleja, S. Fernández-Garrido, A. Trampert, U. Jahn, K.H.Ploog, M. Povoloskyi, A. Di Carlo, ''GaN/AlGaN Nanocavities with AIN/GaN Bragg Reflectors grown in AlGaN Nanocolumns by Plasma Assisted MBE'', Physica status solidi (a) 202, 3, 367 (2005).
  • B. Damilano, J. Barjon, J-Y. Duboz, J. Massies, A. Hierro, J. M. Ulloa, E. Calleja, ''Growth and in situ annealing conditions for long-wavelength (Ga,In)(N,As)/GaAs lasers'', Applied Physics Letters, 86, 071105-071105-3 (2005).
  • J. Grandal, M. A. Sánchez-García, ''InN layers grown on Silicon substrate: effect of substrate temperature and buffer layers'', Journal of crystal growth, 278, 1-4, 373-377 (2005).
  • J. Grandal, M.A. Sánchez-García, F. Calle, E. Calleja, ''Morphology and Optical Properties on InN Layers Grown by Molecular Beam Epitaxy on Silicon Substrates'', Physica status solidi (c), 2, 7, 2289-2292 (2005).
  • M. Hugues, B. Damilano, J. Barjon, J.Y. Duboz, J. Massies, J-M. Ulloa, M. Montes, A. Hierro, ''Perfomance improvement of 1,52 1.52 µm (Ga,In)(N,As)/GaAs quantum well lasers on GaAs substrates'', Electronics Letters (a), 41, 595-596 (2005).
  • H. Teisseyre, I. Gorczyca, N.E. Christensen, A. Svane, F.B. Naranjo, E. Calleja,, ''Pressure behavior of beryllium acceptor level in gallium nitride'', Journal of Applied Physics, 97, 043704 (2005).
  • S. Lazic, M. Moreno, J.M. Calleja A. Trampert, K.H. Ploog, F. Naranjo, E. Calleja,, ''Resonant Raman Scattering in strained and relaxed InGaN(GaN) Quantum Wells'', Applied Physics Letters, 86, 061905 (2005)..
  • A. Hierro, J. M. Ulloa, E. Calleja, B. Damilano, J. Barjon, J-Y. Duboz, J. Massies, ''Room temperature perfomance of low threshold 1.34-1.44 mm GaInNAs/GaAs quantum-well lasers grown by molecular beam epitaxy'', IEEE Photonics Technology Letters, 17 (1),1142-1144, (2005).
  • C. Aleman, E. Armelin, J.L. Iribarren, F. Liesa, M. Laso, J. Casanovas, ''Structural and Electronic Properties of 3,4-Ethylenedioxithiophene, 3,4-Ethylenedisulfanylfurante and Thiophene Oligomers: A Theoretical Investigation '', Synthetic Metals 149, 151156 (2005).
Year 2004
  • A. Trampert, J-M Chauveau, K. Ploog, E. Tournié and A. Guzmán, '' Correlation between interface structure and light emission at 1.3-1.55 µm of (Ga,In)(N,As) diluted nitride heterostructures on GaAs substrates'', Journal of Vacuum Science and Technology B 22 (4), 2195-2200, (2004).
  • M. Laso, U. von Stockar, ''Absorption'', J. Phys. Chem. B, 108, 20331-20339 (2004).
  • F. Calle, J. Grajal, J. Pedrós, ''Active SAW filters using 2DEG AlGaN/GaN heteroestructures'', Electron. Letters 40, 1384-1385 (2004).
  • J. Pedrós, F. Calle, J. Grajal, R.J. Jiménez Riobóo, C. Prieto, J.L. Pau, J. Pereiro, M. Hermann, M. Eickhoff, Z. Bougrioua, ''Anisotropic propagation of surface acoustic waves on nitride layers'', Superlattices and Microstructures. 36, 815-823(2004).
  • H.C. Öttinger, M. Laso, ''CONNFFESSIT: Simulating Polymer Flow '', Simulation Methods for Modeling Polymers Kotelyanski, M.J. and Theodorou, D.N. (eds.) pp. 511-559, (2004).
  • M. Maicas, ''Current-driven magnetization switching in circular magnetic nanodots'', Physica B, 343, 251 (2004).
  • J.M. Ulloa, A. Hierro, J. Miguel-Sánchez, A. Guzmán, E. Tournié, J.L. Sánchez-Rojas, E. Calleja, ''Dominant Carrier Recombination Mechanisms in GaInAsN/GaAs Quantum Well Light Emitting Diodes'', Applied Physics Letters, 85, 40-42 (2004).
  • J. Miguel-Sánchez, A. Guzmán, J.M Ulloa, A. Hierro, E. Muñoz, ''Effect of nitrogen on the optical properties of InGaAsN p-i-n structures grown on misoriented (111)B GaAs substrates'', Applied Physics Letters 84(14) 2524-2526, (2004).
  • F.B. Naranjo, E. Calleja, Z. Bougrioua, A. Trampert, X. Kong, K.H. Ploog, ''Efficiency Optimization of p-type Doping in GaN: Mg Layers Grown by Molecular Beam Epitaxy'', Journal of Crystal Growth, A, 270, 542-546 (2004).
  • D. Curcó, M. Laso, C. Alemán, ''Generation-Relaxation Algorithms to Construct Representative Atomistic Models of Amorphous Polymers: Influence of the Relaxation Method'', J.Phys. Chem. B, 108, 20331-20339 (2004).
  • B. van Aken, J.L. Prieto, N. Mathur , ''Ground state and constrained domain walls in Gd/Fe multilayers'', J. Mag. Mag. Materials 272-76, 715-716 Part 1 (2004) .
  • M. González-Guerrero, L. Pérez, C. Aroca, M. C. Sánchez, E. López, P. Sánchez, ''Hybrid Ferrite-Amorphous Planar Fluxgate'', Journal of Magnetism and Magnetic Materials, 272-276, 777-779, (2004).
  • M. Laso, J. Ramirez, ''Implicit Micro-Macro Methods'', Journal of Non-Newtonian Fluid Mechanics, 122, 1-3, 215-226 (2004).
  • J. Miguel-Sánchez, A. Guzmán, J. M. Ulloa, A. Hierro, E. Muñoz , ''Influence of substrate misorientation and growth temperature on N incorporation in InGaAsN/GaAs quantum wells grown on (111)B GaAs'', Physica E, Vol. 23, 356 (2004).
  • R. Cuscó, L. Artús, E. Pastor, F. Naranjo, E. Calleja, ''Local Vibrational Modes of H-Complexes in Mg-doped GaN Grown by Molecular Beam Epitaxy'', Applied Physics Letters, 86, 897(2004).
  • M.A. Rivero, M.Maicas, E. López, C.Aroca, M.C.Sánchez, P. Sánchez, ''Magnetostatic interactions in bilayer films'', European Physical. J. Appl. Phys. 28, 305-311 (2004).
  • J. Ramirez, M. Laso, ''Micro-macro 3D calculations of viscoelastic flows'', Modelling and Simulation in Materials Science and Engineering 12, 12931306, (2004) .
  • D. Ciudad, C. Aroca, M. C. Sánchez, E. López, P. Sánchez, ''Modeling and Fabrication of a MEMS Magnetostatic Magnetic Sensor'', Sensors & Actuators A. Vol./Iss:115, 2-3, p. 408-416 (2004).
  • E. Muñoz, J.L. Pau, C. Rivera, ''Nitride Photodetectors in UV biological effects studies'', M.S. Shur and A. Zukauskas (eds), UV Solid-State Light Emitters and Detectors, 161-177, (2004).
  • J.L. Pau, C. Rivera, J. Pereiro, E. Muñoz, E. Calleja, U.Schühle, E. Frayssinet, B. Beaumont, J.P. Faurie, P. Gibart, ''Nitride-based photodetectors: from visible to X-ray monitoring'', Superlattices and Microstructures 36, 807-814, (2004).
  • C. Rivera, J. L. Pau, F.B Naranjo, E. Muñoz, ''Novel photodetectors based on InGaN/GaN multiple quantum wells'', Physica Status Solid. (a) 201, No. 12, 2658-2662 (2004).
  • A. Bonito, M. Laso, M. Picasso, ''Numerical Simulation of 3D Viscoelastic Flows with Free Surfaces'', Summitted to Journal of Non Newtonian Fluid Mechanics (2004).
  • L. Pérez, C. Aroca, P. Sánchez, E. López, M.C. Sánchez, ''Planar fluxgate sensor with an electrodeposited amorphous core '', Sensors Actuators A, 109, 208-211(2004).
  • P. Muret, A. Philippe, E. Monroy, E. Muñoz, B. Beaumont, F. Omnès, P. Gibart, ''Properties of a hole trap in n-type hexagonal GaN'', Journal Applied Physics 91(5) 3002, (2004).
  • C. Rivera, J. L. Pau, J. Pereiro, E. Muñoz, ''Properties of Schottky barrier photodiodes based on InGaN/GaN MQW structures'', Superlattices and Microstructures 36, 849-857, (2004).
  • T. Palacios, F. Calle, J. Grajal, ''Remote Collection and Measurement of Photogenerated Carriers Swept by Surgace Accoustic Waves in Gan'', Applied Physics Letters, 84, 3166-8 (2004).
  • J.L. Pau, C. Rivera, E. Muñoz, E. Calleja, U. Schülle, E. Frayssinet, B. Beaumont, J.P. Faurie, P. Gibart., ''Response of Ultra-Low Dislocation Density GaN photodetectors in the near-and vacuum-UV'', Journal of Applied Physics 95, 8275-8279, (2004).
  • J. Ristic, E. Calleja. M.A. Sánchez-García, A.Trampert, K.H.Ploog, J. Sánchez-Páramo, J.M.Calleja, ''Self-organized molecular beam epitaxial growth of AlGaN/GaN Nanostructures on Si(111) substrates for optoelectronic applications'', Future Trends in Microelectronics: The Nano, the Giga, the Ultra, and the Bio, Ed. S. Luryi, J. Xu, A. Zavslavski, Wiley Interscience, Nueva York, p. 226 (2004).
  • J. Miguel-Sánchez, M. Hopkinson, M. Gutiérrez, H.Y. Liu, P. Navaretti, A. Guzmán, J. M. Ulloa, A. Hierro, E. Muñoz, ''Structural and optical quality of InGaAsN quantum wells grown on misoriented (111)B GaAs substrates by molecular beam epitaxy'', J.Crys. Growth, 270, 62-68 (2004).
  • J. Miguel-Sánchez, A. Guzmán, E. Muñoz, ''The role of N ions on the optical and morphological properties of InGaAsN quantum wells for 1.3 -1.5 micron applications'', Appl. Phys. Letters, 85 (11), 1940-1942 (2004).
  • J.L. Prieto, B.van Aken, G.Burnell, C.Bell, J.E.Evetts, M.G. Blamire, ''Transport properties of sharp antiferromagnetic boundaries in Gd/Fe multilayers'', Phys. Rev. B. 69, 54436 (2004).
Year 2003
  • F. Calle, T. Palacios, E. Monroy, J. Grajal, M. Verdú, Z. Bougrioua, I. Moerman, ''AlGaN/GaN HEMTs: Material, processing and characterisation'', Journal of Materials Science Materials in Electronic 14, 271-277, (2003).
  • M. Laso, N. Jimeno, M. Müller, ''An Atomistic Investigation of Solubility and Diffusion of Ethylene in Polyethylene Confined in a Pore'', Polymer Reaction Engineering 11(1), 116 (2003).
  • A. Hierro, J.M. Ulloa, J.M. Chauveau, A. Trampert, M.A. Pinault, E. Tournié, A. Guzmán, J.L. Sánchez- Rojas, E. Calleja, ''Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N Contents Grown by molecular beam epitaxy'', Journal of Applied Physics, 94, 2319-2324, (2003).
  • E. Grande, M. Laso, M. Picasso, ''Calculation of Variable-Topology Free Surface Flows Using CONNFFESSIT'', Journal of Non-Newtonian Fluid Mechanics, 113, 127-145 (2003).
  • J. Ristic, E. Calleja, M.A. Sánchez-García, J.M. Ulloa, J. Sánchez-Páramo, U. Jahn, A. Trampert, K.H. Ploog, ''Characterization of GaN quantum discs embedded in AlxGa1-xN nanocolumns grown by molecular beam epitaxy'', Physical Review B 68, 125305, (2003).
  • U. Schuehle, J.-F.Hochedez , J. L. Pau, C. Rivera, E. Muñoz, J. Alvarez, J.-P. Kleider, P. Lemaire, T. Appourchaux, B. Fleck, A. Peacock, M. Richter, U. Kroth, A. Gottwald, M.C. Castex, A. Deneuville, P. Muret, M. Nesladek, F. Omnes, J. John, C. Van Hoof, ''Development of imaging arrays for solar UV observations based on wide band gap materials'', Proc. SPIE, 5171, 231 - 238, in Telescopes and Instrumentation for Solar Astrophysics (2003).
  • E. Luna, M. Hopkinson, J.M. Ulloa, A. Guzmán, E. Muñoz, ''Dilute nitride based double-barrier quantum-well infrared photodetector operating in the near infrared'', Applied Physics Letters, 83, 3111-3113, (2003).
  • J.M. Ulloa, J.L. Sánchez-Rojas, A. Hierro, J.M.G. Tijero, E. Tounié, ''Effect of Nitrogen on the Band-Structure and Material Gain of In(x)Ga(1-x)As(1-y)N(y)/GaAs Quantum Wells '', IEEE Journal of Selected Topics on Quantum Electronics,9, 716-722 (2003).
  • Z. Bougrioua, I. Moerman, L. Nistor, B. Ban Daele, E. Monroy, T. Palacios, F. Calle, M. Leroux, ''Engineering of an Insulating Buffer and use of AlN Interlayers: two optimisations for AlGaN-GaN HEMT-like structures'', Physica status solidi (a) 195, 93-100, (2003). .
  • E. Luna, A. Guzmán, J.L Sánchez-Rojas, J.M.G. Tijero, R. Hey, J. Hernando, E. Muñoz, ''Growth and characterization of modulation-doped double barrier quantum well infrared photodetectors'', Journal of Vacuum Science and Technology B, B 21(2), 883-887, (2003).
  • A. Jiménez, J.M. Tirado, A.F. Braña, E. Muñoz, E. Calleja, Z. Bougrioua, I. Moerman, ''Improved AlGaN/GaN High Electron Mobility Transistor devices using AlN interlayers'', Applied Physics Letters, 82, 4827, (2003).
  • M.A. Rivero, M. Maicas, E.López, C. Aroca, M.C. Sánchez, P. Sánchez, ''Influence of the sensor shape on Permalloy/Cu/Permalloy magnetoimpedance'', J. Mag. Mag. Mat. 254-255, 636-638, (2003).
  • L. Pérez, Ó. De abril, C. Aroca, P. Sánchez, E. López, M.C. Sánchez, ''Magnetic domain structures in CoNiFe thin films and lines'', Mat. Res. Soc. Symp. Proc. 738, G13.9.1-G13.9.6, (2003) .
  • R.P. Almazán, L. Pérez, C. Aroca, M.C. Sánchez, P. Sánchez, E. López, ''Magnetometric sensors based on planar spiral coils'', J. Mag. Mag. Mat. 254-255, 630-632, (2003).
  • J.L. Prieto, M.G. Blamire, J.E. Evetts, ''Magnetoresistance in a constricted Domain Wall'', Phys. Rev. Lett. 90, 27201 (2003).
  • E. Luna, J.L. Sánchez-Rojas, A. Guzmán, J.M.G Tijero, E. Muñoz Merino, ''Modulation-Doped Double-Barrier Quantum Well Infrared Detectors for Photovoltaic Operation in 3-5 µm'', IEEE Photonics Technology Letters, 15 (1), 105-107, (2003).
  • E. Luna, A. Guzmán, J.L Sánchez-Rojas, E. Calleja, E. Muñoz, ''Modulation-doping in 3-5 µm GaAs/AlAs/AlGaAs double barrier QW infrared photodetectors. An alternative to achieve high photovoltaic perfomance and high temperature detection'', Infrared Physics & Technology, 44, 383-390, (2003).
  • E. Luna, A. Guzmán, A. Trampert, J.L. Sánchez-Rojas, E. Calleja, ''On the growth conditions of 3-5 µm well doped AlGaAs/AlAs/GaAs infrared detectors and its relation to the photovoltaic effect studied by Transmission Electron Microscopy, '', Infrared Physics & Technology, 44, 391-398, (2003).
  • J. Ristic, M.A. Sánchez-García, E. Calleja, A. Trampert, K.H. Ploog. J. Sánchez-Páramo, J.M. Calleja, ''Self-organized molecular beam epitaxial growth of AlGaN/GaN nanostructrues for Optoelectronic applications'', Future Trends in Microelectronics: The Nano, the Giga, the Ultra, and the Bio, Proceeding, Córcega (France), 2003.
  • F.M. Morales, A. Pone, S.I.. Molina, D. Araujo, R. García, J. Ristic, M.A. Sánchez-García, E. Calleja, V. Cimalla, J. Pezoldt, ''Structural study of GaN layers grown on carbonized Si(111) substrates'', Mat. Sci. Forum 433-436, 1003-6, (2003).
  • A. Guzmán, E. Luna, J. Miguel-Sánchez, E. Calleja, E. Muñoz, ''Study GaAsN/AlAs/AlGaAs double barrier quantum wells grown by Molecular Beam Epitaxy as an alternative to infrared absoption below 4 µm. '', Infrared Physics and Technology, 44, 377-382, (2003).
  • O. García Pascua, O. Ahumada, M. Laso, M., Müller, ''The effect of the initial guess generator on molecular mechanics calculations'', Molecular Simulation 29(3), 187 - 199 (2003) .
  • D. Zanuy, C. Alemán, M. Laso, S. Muñoz-Guerra, ''Thermally induced transitions in helical comb-like poly(b-peptide)s: An atomistic simulation'', Journal of Computational Chemistry 24, 770-778 (2003).
  • N. Jimeno, J.C Esteve, ''Usos del relleno estructurado en columnas de absorción líquido-gas'', Polymer Reaction Engineering 11(1), 116 (2003).
  • E. Monroy, F. Omnès, F. Calle, ''Wide bandgap semiconductor ultraviolet photodetectors'', Semicond. Sci. Technol. 18, R33-R51, (2003) R inv.
Year 2002
  • A.M. Sánchez, F.J. Pacheco, S.I. Molina, P.Ruterana, F. Calle, T.A. Palacios, M.A. Sánchez-García, E. Calleja, R. García, ''AIN Buffer layer thickness influence on inversion domains in GaN/AIN/Si(111)'', Materials Science and Engineering B93, 181-184, (2002).
  • J. Ristic, M.A. Sánchez-García, J.M. Ulloa, E. Calleja, J. Sánchez-Páramo, J.M. Calleja, U. Jahn, A. Trampert, K.H. Ploog., ''AlGaN Nanocolumns and AlGaN/GaN/AlGaN Nanostructures Grown by Molecular Beam Epitaxy'', Physica Status solidi (b), 234,717, (2002).
  • J. Ristic, M.A. Sánchez-García, E. Calleja, J.Sánchez-Páramo, J.M. Calleja, U. Jahn, Kh. Ploog., ''AlGaN nanocolumns Grown by Molecular Beam Epitaxy: Optical and structural Characterization'', Physica Status solidi (a), 192, 60-66, (2002) .
  • J.L. Pau, E. Monroy, M.A. Sánchez-García, E. Calleja, E. Muñoz, ''AlGaN Ultraviolet Photodetectors Grown by Molecular Beam Epitaxy on Si(111) Substrates '', Materials Science & Engineering B93, 159-162, (2002).
  • E. Monroy, T. Palacios, O. Hainaut, F. Omnes, F. Calle, J-F. Hochedez, ''Assessment of GaN metal-semiconductor-metal photodiodes for high-energy UV photodetection'', Applied Physic Lett. 80, 3198-3200, (2002) .
  • J. Rubio-Zuazo, R. J. Jiménez-Rioboó, C. Prieto, T. Palacios, F. Calle, E. Monroy, M.A. Sánchez-Garcia, ''Brillouin Characterization of the acoustic-waves phase-velocity in AlGaN epilayers'', Materials Science and Engineering B93, 168-171, (2002) .
  • T. Fleischmann, J.M.Ulloa, M.Moran, G.J.Rees, J.Woodhead and M.Hopkinson,, ''Characterisation of strained (111)B InGaAs/GaAs quantum well lasers with intracavity optical modulator'', Microelectronics Journal 33, 547-552 (2002) .
  • E.R. Glaser, S.C. Binari, G.C. Braga, W.E. Carlos, J. A. Freitas, R.L. Henry, D. D. Koleske, W.J. Moore, B.V. Shanabrook, A. E. Wickenden, M.W. Bayerl, M.S. Brandt, H. Obloh, P.Kodozoy, S.P. Denbaars, U.K, Mishra, S. Nakamura, E. Haus, J.S. Speck, J.E. Van Nos, ''Characterization of Nitrides by Electron Paramagnetic Resonance (EPR) and Optically Detected Magnetic Resonance (ODMR),'', Materials Science & Engineering B93, 39, (2002).
  • M. Laso, J.L Cormenzana, ''Computational Techniques For Smart Materials'', Encyclopedia of Smart Materials, Mel Schwartz Ed., pp. 265-274, John Wiley & Sons, New York (2002).
  • J.J. Sánchez, J.I. Izpura, J.M.G. Tijero, E. Muñoz, S. Cho, A. Majerfeld, ''Confirmation of the pyroelectric coefficient of strained InxGa(1-x)As/GaAs quantum well structures grown on (111)B GaAs by differential photocurrent spectroscopy'', J. Appl. Phys, 91 (5), 3002-3006, (2002).
  • E. López Cabarcos, A. F. Braña, B. Frick, F. Batallán, ''Correlation Between Molecular Dynamics and Thermal Hysteresis in the 60/40 Vi-nylidene Fluoride and Trifluoroethylene Ferroelectric Copolymer'', Physica-A 324, 714-721, (2002).
  • A. Jiménez, E. Calleja, E. Muñoz, M. Varela, C. Ballesteros. U.Jahn, K. Ploog, F. Omnes, P. Gibart, ''Correlation between transport, optical and structural properties in AlGaN/GaN heterostructures'', Materials Science & Engineering B93, 64, (2002) .
  • A. Jiménez, D. Buttari, D. Jena, R. Coffie, S. Heikman, N.Q. Zhang, L. Shen, E. Calleja, E. Muñoz, J. Speck, U.K. Mishra, ''Effect of p-Doped Overlayer Thickness on RF-Dispersion in GaN Junction Field Effect Transistors'', IEEE Electronic Device Letters 23 (6), 306-309, (2002) .
  • B. Roycroft, M. Akhter, P. Maaskant, P. De Mierry, S. Fernández, F. B. Naranjo, E. Calleja, T. McCormack, B. Corbett, ''Experimental Characterization of GaN-Based Resonant Cavity Light Emitting Diodes'', Physica Status Solidi (a), 192, 97, (2002) .
  • F. Calle, T. Palacios, E. Monroy, J. Grajal, J. M. Tirado, A. Jiménez, R. Ranchal, E. Muñoz, M. Verdú, F. J. Sánchez, M. T. Montojo, Z. Bougrioua, I. Moerman, ''Fabrication and performance of AlGaN/GaN HEMTs'', Proc. 4th Int Conf. Materials for Microelectronics and Nanoengineering, 25-28. ISBN: 1-86125-155-6. IOM Comm, Ltd .
  • F.B. Naranjo, S. Fernández, F. Calle, M.A. Sánchez-García, E. Calleja, ''From UV to green InGaN-based Standard and Resonant-cavity LEDs grown by MBE '', Physica status solidi (a) 192, 341-347, (2002) .
  • E. Luna, A. Guzmán, J.L. Sánchez-Rojas, J. Miguel-Sánchez, A. Guzmán, Elías Muñoz Merino: member IEEE, ''GaAs-Based Modulation-Doped Quantum-Well Infrared Photodetectors for Single-and Two-Color Detection in 3-5 mm'', IEEE Journal of Selected Topics in Quantum electronics, 8 (5), 992-997, (2002) .
  • M.A. Sánchez-García, E. Calleja, E. Muñoz, F. Calle, F. B. Naranjo, J. L.Pau, A. Jiménez, S. Fernández, J. Ristic, ''Growht of III-Nitrides on Si (111) and GaN Templates: Challenges and Prospects'', Future Trends in Microelectronics: The Nano Millenium, 293-304. Ed. S. Luryi, J. Xu, A. Zavslavski. (ISBN 0-471-21247-4). Wiley Interscience, New York, (2002).
  • S. Fernández, F. B. Naranjo, F. Calle, E. Calleja, A. Trampert, K.H.Ploog, ''Growth and Characterization of High Quality Ten-priod AlGaN/GaN Bragg reflectors grown by MBE'', Materials Science and Engineering B93, 31-34, (2002) .
  • J. Ristic, M.A. Sánchez-García, E.Calleja, A.Pérez-Rodríguez, C. Serre, A. Romano-Rodríguez, J.R. Morante, V.R.Koegler, W. Skorupa, ''Growth of GaN layers on SiC/Si(111) Substrates by Molecular Beam Epitaxy'', Materials Science & Engineering B93, 172, (2002) .
  • S. Fernández, F. B. Naranjo, F. Calle, M.A. Sánchez-García, E. Calleja, P. Vennegues, ''High quality distributed Bragg reflectors for Resonant-cavity LED applications'', Physica status solidi (a) 192, 389-393, (2002) .
  • T. Palacios, E. Monroy, F. Calle, F. Omnes, ''High responsivity sub-micron MSM UV detectors'', Appl. Phys. Lett. 81, 1902-1904, (2002).
  • R.J. Jiménez Riobóo, E. Rodríguez-Cañas, M. Vila, C. Prieto, F. Calle, T. Palacios, M.A. Sánchez-García, F. Omnés, O. Ambacher, B. Assouar, O. Elmazria, ''Hypersonic characterization of sound propagation velocity in AlGaN thin films'', Journal Applied Physics 92, 6868-6874 (2002).
  • E. Monroy, F. Calle, E. Muñoz, F. Omnès, ''III-Nitride Based UV Photodetectors'', in III-Nitride Semiconductors: Applications and Devices, ed. E. T. Yu and M. O. Manasreh, Taylor & Francis (New York), 2002.
  • A. Hierro, A. R. Arehart, B. Heying, M. Hansen, U.K. Misrhra, S. P. Denbaars, J.S.Speck, S.A. Ringel, ''Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular beam epitaxy'', Applied Physics Letters A, 80, 805-807, (2002).
  • H.P.D. Schenk. P. De Mierry, P. Vennegues, O. Tottereau, M. Laügt, M. Vaille, E. Feltin, B. Beaumont, P. Gibart, S. Fernández, F. Calle, ''In situ growth control of distributed GaN/AlGaN Bragg reflectors by metalorganic vapor phase epitaxy'', Applied Physic Lett. 80, 174-176, (2002) ..
  • D. Morecroft, C.W. Leung. J.L.Prieto, G. Burnell, M.G. Blamire, ''In situ-magnetoresistance measurements during patterning of thin films and spin valve devices'', J. Appl. Phys. 91, 10 (2002).
  • A.L. Álvarez, F. Calle, E. Monroy, J. L. Pau, M. A. Sánchez-García, E. Calleja, E. Muñoz, ''Interplay between Ga-N and Al-N sublattices in wurzite AlGaN alloys studied by Raman spectroscopy '', Journal of Applied Physics 92, 223-226, (2002) .
  • M.A. Sánchez-García, J. Ristic, E. Calleja, A. Pérez- Rodríguez, C. Serre, A. Román-Rodríguez, J.R. Morante, R. Koegler, W. Skorupa, A. Trampert, K.H. Ploog, ''Luminescence and morphological properties of GaN layers grown on SiC/Si(111) substrates'', Physica status solidi (a) 192,401, (2002).
  • L. Pérez, K. Attenbourough, J. De Boeck, J.P. Celis, C.Aroca, P. Sánchez, E. López, M.C. Sánchez, ''Magnetic properties of CoNiFe alloys electrodeposited under potential and current control conditions'', J. Mag. Mag. Mat. 242-245,163-165, (2002) .
  • M. Maicas, M. Rodríguez, E. López, M.C. Sánchez, C. Aroca, P. Sánchez, ''Magnetic switching fields in square monolayer and bilayer nanodots'', Comp. Mat. Sci. 25, 525-530, (2002).
  • A. Guzmán, E. Tournié, M.-A Pinault., ''Mechanism affecting the photoluminescence spectra of GaInNas after post-growth annealing'', Applied Physics letters 80 (22), 4148 - 4152, (2002).
  • M. Maicas, M. A. Rivero, E. López, C. Aroca, M.C. Sánchez, P. Sánchez, ''Micromagnetic structures in square magnetic dots'', J. Mag. Mag. Mat., 242-245, 1024-1025, (2002).
  • E. López Cabarcos, A. F. Braña, B. Frick, F. Batallán, ''Molecular dynamics and thermal hysteresis loops of the vinilydene fluoride trifluoro-ethylene ferroelectric copolymer.'', Phys Rev. B 65, 104110, (2002) .
  • T. Palacios, F. Calle, E. Monroy, J. Grajal, M. Eickhoff, O. Ambacher, C. Prieto, ''Nanotechnology for SAW devices on AlN epilayers'', Materials Science and Engineering B93, 154-158, (2002) .
  • M.D. Michelena, C. Aroca, E. López, M. C. Sánchez, P. Sánchez, ''New hybrid magnetometric sensor'', Sensors & actuators 100,153-159, (2002) .
  • F. Calle, F. B. Naranjo, S. Fernández, M. A. Sánchez-García, E. F. Calleja, E. Muñoz, ''Nitride RCLEDs grown by MBE for POF applications'', Physica status solidi (a) 192, 27, (2002) .
  • T. Palacios, F. Calle, E. Monroy, F. Omnes, ''Novel approaches for submicron metal-semiconductor-metal GaN UV photodetectors'', Physica status solidi (a) 194, 476-479, (2002) .
  • S. Cho, A. Majerfeld, J. J. Sánchez, E. Muñoz, J.M. G. Tijero, I. Izpura, ''Observation of the pyroelectric effect in strained Piezoelectric InGaAs/GaAs quantum-wells grown on (111)B GaAs substrates'', Microelectronics Journal 33, 531-534, (2002) .
  • M.D. Michelena, F. Montero, P. Sánchez, E. López, M.C. Sánchez, C. Aroca, ''Piezoelectric-magnetostrictive magnetic sensors using stripe actuators'', J. Mag. Mag. Mat. 242, 245,1160-1162, (2002) .
  • M.A. Sánchez-García, J. L Pau, F. Naranjo, A. Jiménez, S. Fernández, J. Ristic, F. Calle, E. Calleja, E. Muñoz, ''Plasma-assisted MBE growth of group-III nitrides: from basics to device applications'', Materials Science and Engineering B93, 190-197, (2002).
  • E. Calleja, E. Muñoz, K. Ploog, editors, ''Proceedings of the Fourth International Symposium on Blue Laser and Light Emitting Diodes'', Physica status solidi (a), 192,1-2, (2002) .
  • F.B. Naranjo, S. Fernández, F. Calle, M.A. Sánchez-García, E. Calleja, E. Muñoz, ''Resonant-cavity InGaN Multiple Quantum Well Green LED grown by MBE'', Applied Physic Lett., 80, 2198-2200, (2002) .
  • E. Muñoz, ''Semiconductor UV sources and Detectors: some non-consumer applications'', High Speed Electronics and Systems. Int. J.of High Speed Electronics and Systems, 12 (2), 421-428, (2002), and in Selected Topics in Electronics and Systems, Frontiers in Electronics. vol. 26, (2002) .
  • J.M. Ulloa, L. Borruel, J.M.G. Tijero, J.Temmyo, I. Esquivias, I. Izpura, J.L.Sánchez-Rojas, ''Spontaneous emission study of (111) InGaAs/GaAs Quantum Well Lasers'', Microelectronics Journal, vol. 33, 589-593, (2002).
  • F.B. Naranjo, M. A. Sánchez-García, F. Calle, E. Calleja, B. Jenichen, K.H. Ploog, ''Strong localization in InGaN layers with high In content grown by molecular beam epitaxy'', Applied Physic Lett. 80, 231-233, (2002) .
  • F.B. Naranjo, S. Fernández, M.A. Sánchez-García, F. Calle, E. Calleja, A. Trampert, K.H. Ploog, ''Structural and Optical Characterization of Thick InGaN Layers and InGaN/GaN MWQs grown by MBE'', Materials Science and Engineering B93, 131-134, (2002).
  • J. Sánchez-Páramo, J. M. Calleja, M.A. Sánchez-García, E. Calleja, U. Jahn, ''Structural and optical investigation of intrinsic GaN nanocolumns'', Physica E. 13, 1070-1073, (2002).
  • O. Ahumada, M. Laso, ''Structural effects of a benzene inclusion into a polyethylene matrix: a Monte Carlo simulation'', Macromolecules 35, 262-270 (2002).
  • T. Palacios, F. Calle, E. Monroy, E. Muñoz, ''Submicron Technology for III-Nitride Semiconductors'', J. Vac. Sci. & Tech. B, 20, 2071-2074, (2002).
  • J. Hernando, J.M.G. Tijero, J.L. Sánchez- Rojas, ''Temperature control in InGaAs-based quantum well structures grown by molecular beam epitaxy on GaAs(100) and GaAs(111)B substrates . '', Journal of Crystal Growth 246,1-8, (2002) .
  • R. Ranchal, M. Torija, E. López, M.C. Sánchez, C. Aroca, P. Sánchez, ''The influence of the anisotropy on magnetoresistence of Permalloy-Copper-Permalloy thin films'', Nanotechnology 13, 392-297, (2002).
  • E. Monroy, F. Calle, R. Ranchal, T. Palacios, M. Verdú, F.J. Sánchez, M. T. Montojo, M. Eickhoff, F. Omnés, Z. Bougrioua, I. Moerman, ''Thermal stability of Pt and Ni based Schottky contacts on GaN and AlGaN'', Semicond. Sci. Technol. 17, L47-L54, (2002).
  • A. Link, T. Graf, O. Ambacher, A. Jiménez, E. Calleja, Y. Smorchkova, J. Speck, U. Mishra, M. Stutzmann, ''Transport Properties of 2DEGs in AlGaN/GaN Heterostructures: Spin Splitting and Occupation of Higher Subbands'', Physica Status Solidi (a), Phys. Stat. Sol. (b) 234, n°3, 805-809, (2002).
  • J.L. Pau, E. Muñoz, M. A. Sánchez-García, E. Calleja, ''Visible- and solar-blind AlGaN metal-semiconductor-metal photodetectors grown on Si (111) substrates'', Physica Status Solidi 192, 314-319, (2002).
Year 2001
  • J.L. Pau, E. Monroy, F. B. Naranjo, E. Muñoz, F. Calle, M. A. Sánchez-García, E. Calleja, ''AlGaN photodetectors grown on Si(111) by Molecular Beam Epitaxy'', J. Cryst. Growth 230, 548-552, (2001).
  • E. Monroy, F. Calle, J. L. Pau, E. Muñoz, F. Omnès, B. Beaumont, P. Gibart, ''AlGaN-based UV photodetectors'', J. Cryst. Growth 230, 541-547, (2001).
  • E. Monroy, F. Calle, J. L. Pau, E. Muñoz, F. Omnès, B. Beaumont, P.Gibart , ''Application and performance of GaN based UV-detectors'', Phys. Stat. Sol. A 185, 91-97, (2001).
  • J. Cormenzana, A. Ledda, M. Laso, B. Debbaut, ''Calculation of Free Surface Flows Using CONNFFESSIT'', Journal of Rheology 45(1) 237-258 (2001).
  • J. Ramírez, M. Laso, ''Conformational kinetics in liquid n-butane by Transition Path Sampling'', Journal of Chemical Physics, 115, 7285-7292 (2001).
  • D. Morecroft, C.W. Leung, N.A. Stelmashenko, J.L. Prieto, D.B. Jardine, M.G. Blamire, ''Control of the switching properties of magnetic thin films and spin valve devices by patterning'', IEEE Trans. Mag. 37, 4, 1, 2079-2081 (2001).
  • P. Muret, A. Philippe, E. Monroy, E. Muñoz, B. Beaumont, F. Omnès, P. Gibart, ''Deep levels in MOCVD n-type hexagonal gallium nitride studied by high resolution deep level transient spectroscopy'', Mater. Sci. Eng. B 82, 91-94, (2001).
  • S. Cho, A. Majerfeld, A. Sanz-Hervas, J.J. Sanchez, J.L. Sanchez-Rojas, I. Izpura, ''Determination of the pyroelectric coefficient in strained InGaAs/GaAs quantum wells grown on (111)B GaAs substrates'', J. Appl. Phys. 90 (2), 915-91,7 (2001).
  • J.F. Hochedez, P. Bergonzo, M.-C. Castex, P. Dhez, O. Hainaut, M. Sacchi, J. Alvarez, H. Boyer, A. Deneuville, P. Gibart, B. Guizard, J-P. Kleider, P. Lemaire, C. Mer, E. Monroy, E. Muñoz, P. Muret, F. Omnès, J.L. Pau, V. Ralchenko, D. Tromson, E. Verwichte, J, ''Diamond UV detectors for future solar physics missions'', Diamond and Related Mat. 10, 673-680, (2001).
  • E. Monroy, F. Calle, J. L. Pau, E. Muñoz, M. Verdú, F. J. Sánchez, M. T. Montojo, F. Omnès, Z. Bougrioua, I. Moerman, E. San Andrés, ''Effect of dielectric layers on the performance of AlGaN-based UV Schottky photodiodes'', Phys. Stat. Sol. A 188, 307-310, (2001).
  • J. Hernando, J. L. Sanchez-Rojas, J. M. G. Tijero, D. Gonzalez, G. Aragon, R. Garcia, A Guzman Y E. Muñoz., ''Effect of Indium content on the normal incident photoresponse of InGaAs/GaAs quantum well infrared photodetectors '', Appl. Phys. Lett., vol. 78, n 16, 2390-2393, (2001).
  • J.L. Pau, E. Monroy, E. Muñoz, F. Calle, M. A. Sánchez-García, E. Calleja, ''Fast AlGaN metal-semiconductor-metal photodetectors grown on Si(111)'', Electron. Lett., 37, 239-240, (2001).
  • S. Fernández, F. B. Naranjo, F. Calle, M.A. Sánchez García, E. Calleja, P. Vennegues, A. Trampert, K. H. Ploog, ''High-Quality Distributed Bragg Reflectors based on AlxGa1-xN/GaN Multilayers grown by Molecular Beam Epitaxy'', Appl. Phys. Lett. 79, 2136, (2001).
  • E. Muñoz, E. Monroy, J.L. Pau, F. Calle, F. Omnès, P. Gibart, ''III-Nitrides and the UV detection'', J. Phys. Condensed Matter, 13, 7115-7137, (2001).
  • J.L. Prieto, N. Rouse, N.K. Todd, D. Morecroft, J. Wolfman, J.E. Evetts, M.G. Blamire, ''Integrated magnetic field sensor based on magnetoresistive Spin Valve structure'', Sensors & Actuators A, 94, 64-68 (2001).
  • S. Fernández, F. B. Naranjo, F. Calle, M.A. Sánchez García, E. Calleja, P. Vennegues, A. Trampert, K. H. Ploog, ''MBE-grown High-quality (Al, Ga)N/GaN Distributed Bragg Reflectors for Resonant Cavity LEDs'', Semiconductor Science and Technology vol. 16, 11, 913-917 (2001).
  • S. León, C. Alemán, F. Escalé, M. Laso, ''MCDP: An Advanced Tool to Simulate Comb-Like Polymers'', Journal of Computational Chemistry 22 (2), 162-171 (2001) .
  • J. Dumont, E. Monroy, E. Muñoz, P. Boieriu, F. Omnès, R. Sporken, ''Metal/GaN and metal/AlGaN contacts studied by XPS depth profiles and by electrical measurements'', J. Cryst. Growth 230, 562-567, (2001).
  • E. Calleja, M.A. Sánchez-García, F. Calle, F.B. Naranjo, E. Muñoz, U. Jahn, K. Ploog, J. Sánchez, J.M. Calleja, K. Saarinen, P. Hautojärvi, ''Molecular beam epitaxy growth and doping of III-nitrides on Si(111): layer morphology and doping efficiency'', Mater. Sci. Eng. B 82, 2, (2001).
  • D. Zanuy, C. Alemán, F. López-Carrasquero, M.E. Báez, M. García-Alvarez, M. Laso, S. Muñoz-Guerra, ''On the Phase B of Comblike Poly(a-alkyl-b-L-aspartate)s: A Simulation of the Solubility of Small Penetrants'', Macromolecular Chemistry and Physics 202, 564-573 (2001).
  • J. Sanchez-Páramo, J.M. Calleja, M.A. Sanchez-García, E. Calleja, ''Optical investigation of strain in Si-doped GaN films'', Appl. Phys. Lett. 78, 4124, (2001).
  • L. Borruel, J.M.Ulloa, J.J.Sánchez, B.Romero, J.Temmyo, J.M.G.Tijero, J.L.Sánchez-Rojas and I.Esquivias, , ''Piezoelectric effects in InGaAs/GaAs Quantum Well Lasers grown on (111)B GaAs substrates'', Photonics West 2001, Integrated Optoelectronic Devices, 4283-28 (2001).
  • E. Monroy, F. Calle, T. Palacios, J. Sanchez-Osorio, M. Verdú, F. J. Sánchez, M. T. Montojo, F. Omnès, Z. Bougrioua, I. Moerman, ''Realibility of Schottky contacts on AlGaN'', Phys. Stat. Sol. A 188, 899-903 (2001).
  • J.I. Izpura, ''Side contact effects on the capacitance properties of junction devices.Application to III-Nitrogen structures'', Semicond. Sci. Technol., 16, 243-249, (2001).
  • T. Fleischmann, M. Moran, M. Hopkinson, H. Meidia, J.G. Rees, A.G. Cullis, J.L. Sanchez-Rojas, I. Izpura., ''Strained layer (111)B GaAs/InGaAs single quantum well lasers and the dependence of their characteristics upon indium composition.'', J. Appl. Phys. 89 (9), 4689-4696, (2001).
  • F. Vigué, E. Tournié, J.-P. Faurie, E. Monroy, F. Calle, E. Muñoz, ''Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes'', Appl. Phys. Lett. 78, 4192-4194, (2001).
  • A. Guzmán, J.L. Sánchez-Rojas, J.M.G. Tijero, J. Hernando, E. Calleja, E. Muñoz, ''Voltage-tunable two-color quantum well infrared detector with Al-graded triangular confinement barriers'', Semicond. Sci. Technol., vol. 16, 285-288, (2001).
Year 2000
  • M.A. Rivero, E. López, C. Aroca, M. C. Sánchez, P. Sánchez, ''Acoplamiento de paredes magnéticas en sandwiches de películas delgadas'', Rev. Esp.Cerámica y Vidrio, 39, 355-358, (2000).
  • F. Omnes, E. Monroy, B. Beaumont, F. Calle, E. Muñoz, P. Gibart, ''AlGaN based structures on sapphire for visible to solar blind Schottky barrier UV photodetectors: towards high performance device applications'', Photodetectors : Materials and Devices V. SPIE Optoelectronics 3948, 234-249, (2000).
  • F. Omnes, B. Beaumont, P. Gibart, E. Monroy, F. Calle, E. Muñoz, E. Dogheche, ''AlGaN based UV photodetectors and waveguides'', SOTAPOCS proc. 2000-1, 205-219, (2000).
  • F. Omnes, E. Monroy, F. Calle, E. Muñoz, B. Beaumont, P. Gibart, ''AlGaN based UV visible-blind photodetector device applications'', OptoElectronics Review 8 (1), 43-55, (2000).
  • E. Muñoz, E. Monroy, F. Calle, F. Omnès, P. Gibart, ''AlGaN Photodiodes for Monitoring the Solar UV Radiation'', J. of Geophys. Research Vol. 105, 4865-4871, (2000).
  • E. Muñoz, E. Monroy, F. Calle, E. Calleja, F. Omnès, B. Beaumont, P. Gibart, ''AlGaN-based UV Detectors and Applications'', LEOS?99 12th Annual Meeting, 96-97, (1999), IEEE 99 CH37009, v.1, p 96-97 (2000).
  • E. Muñoz, E. Monroy, J.L. Pau, F. Calle, E. Calleja, F. Omnes, B. Beaumont, P. Gibart , ''AlGaN-based UV Detectors and Applications'', Phys. Stat. Sol.(a) 180, 293-300, (2000).
  • E. Monroy, F. Calle, J.L. Pau, F.J. Sánchez, E. Muñoz, F. Omnès, B. Beaumont, P. Gibart, ''Analysis and Modeling of AlXGa1-xN-Based Schottky Barrier Photodiodes'', J. Appl. Phys. 88, 2081-2091, (2000).
  • L. Pérez, O. De Abril, M.C.Sánchez, C.Aroca, E. López, P. Sánchez, ''Electrodeposited amorphous CoP multilayers with high permeability'', J. Mag. Mag. Mat. 215-216, 337- 339, (2000).
  • F. Vigué, P. De Mierry, J.-P. Faurie, E. Monroy, F.Calle, E. Muñoz, ''High detectivity ZnSe-based Schottky barrier photodetectors for the blue and near-UV spectral range'', Electron. Lett., 36, 826-827, (2000).
  • N. Blanco, E. Redondo, F. Calle, I. Martil, G. Gonzalez-Diaz, ''High quality Si implanted InGaAs epitaxial layers and their application to n+ p junction devices'', J. Appl. Phys. 87, 3478-3482, (2000).
  • J.L. Pau, E. Monroy, F. B. Naranjo, E. Muñoz, F. Calle, M. A. Sánchez-García, E. Calleja, ''High visible rejection AlGaN photodetectors on Si(111) substrates'', Appl. Phys. Lett. 76, 2785-2787, (2000).
  • J.L. Prieto, P. Sánchez, C. Aroca, E. López, M.C.Sánchez, O.De Abril, L. Pérez, ''Improving the characteristics in magnetostrictive-piezoelectric sensors when the viscous interface is removed'', Sensors and Actuators 84, 338-341, (2000).
  • M. Alcalá, E.López, C.Aroca, M.C.Sánchez, P.Sánchez, ''Influence of hydrogen distribution on magnetic properties of amorphous samples'', Eur. Phys. J. B, 14, 473-476, (2000).
  • J.A. Garrido, B.E. Doutz, J.A. Smart, J.R. Shealy, M.J. Muephy, W.J. Schaff, L.F. Eastman, ''Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors'', Appl. Phys. Lett., 76, n 23, 442-3444, (2000).
  • E. Monroy, F. Calle, J.L. Pau, E. Muñoz, F. Omnès, P. Gibart, ''Low-noise Metal-Insulator-Semiconductor UV Photodiodes based on GaN'', Electron. Lett., 36, 2096-2098, (2000).
  • E. Calleja, M.A. Sanchez-Garcia, F.J. Sanchez, F. Calle, F.B. Naranjo, E. Muñoz, U. Jahn, K.H. Ploog, B. Monemar, K .Saarinen, P. Hautojarvi, ''Luminescence properties of GaN nanocolumns grown by molecular beam epitaxy'', Phys. Rev. B62, 16826, (2000).
  • J.L. Prieto, C. Aroca, E. López, M.C.Sánchez, P. Sánchez, ''Magnetostrictive-piezoelectric magnetic sensor with current excitation'', J. Mag. Mag. Mat. 215-216, pp.756-758, (2000).
  • C. Favieres, C. Aroca, M.C.Sánchez, V. Madurga, ''Matteucci effect as exhibited by cilindrical CoP amophous multilayers'', J. Appl. Phys. 87, 1889-1898, (2000).
  • J. Dumont, R. Caudano, R. Sporken, E. Monroy, E. Muñoz, B. Beaumont, P. Gibart, ''Metal/GaN contacts studied by electron spectroscopies'', MRS Internet J. Nitride Semicond. Res. 5S1, W11.79, (2000).
  • M. Hanzaz, A. Bouhdada, E. Monroy, E. Muñoz, P. Gibart, F. Omnès, ''Modeling of the spectral response of AlxGa1-xN p-n junction photodetectors'', Eur. Phys. J. Appl. Phys., 11, 29-34, (2000).
  • A. Bouhdada, M. Hanzaz, P. Gibart, F. Omnès, E. Monroy, E. Muñoz, , ''Modeling of the spectral response of AlxGa1-xN Schottky ultraviolet photodetectors'', J. Appl. Phys. 87 (12), 8286-8290, (2000).
  • S. León, C. Alemán, S. Muñoz-Guerra, M. Laso, ''Monte Carlo Structural Investigation of Helical Poly(b-L-aspartate)s Containing Linear Alkyl Side Chains'', Computational and Theoretical Polymer Science 10, 177-187, (2000).
  • F. Calle, E. Monroy, E. Muñoz, F. Omnès, J.L. Pau, E. Calleja, F. Jaque, B. Beaumont, P. Gibart, ''Nitride Photodetectors for UV Monitoring'', Advanced Nanoelectronics: Devices, Materials, and Computing. Memoirs of ISIR, vol. 57,165-166 (2000) .
  • M. Diaz Michelena, C.Aroca, M.C.Sánchez , E. López, P. Sánchez, ''Optical vibrating sample magnetometer'', J. Mag. Mag. Mat. 215-216, 677-679, (2000).
  • F.K. Koschnick, K. Michael, J.M. Spaeth, B. Beaumont, P. Gibart, E. Calleja, E. Muñoz, ''Optically detected magnetic resonance study of defects in undoped, be-doped, and mg-doped GaN'', Journal of Electronic Materials, vol. 29, n 12, 1351-1355, (2000).
  • E. Monroy, F. Calle, J.L. Pau, E. Muñoz, F. Omnès, B. Beaumont, P. Gibart, ''Present Status of III-Nitride Based photodetectors'', Mat. Res. Soc. Symp. vol 622, T3.7, 1-12, (2000).
  • A.F. Braña, C. Díaz-Paniagua, F. Batallan, J.A. Garrido, E. Muñoz, F. Omnes, ''Scattering times in AlGaN/GaN two-dimensional electron gas from magnetoresistance measurements'', J. Appl. Phys. 88(2), 932-937, (2000).
  • W.K. Maser, E. Muñoz, A.M. Benito, M.T. Martínez, G.F de la Fuente, E. Anglaret, A. Righi, J.L. Sauvajol, ''Single-wall carbon nanotubes: Study of production parameters using cw C02 laser ablation technique'', AIP Conf. Proc. 544(1) 213, (2000).
  • F.B. Naranjo, M.A. Sanchez-Garcia, J.L. Pau, A. Jimenez, E. Calleja, E. Muñoz, ''Study of the effects of Be and Mg co-dopingin GaN layers'', Phys. Stat. Sol. (a) 180, 97-102, (2000).
  • J.L. Sánchez-Rojas, J.A. Garrido, E. Muñoz, ''Tailoring of intenal fields in AlGaN/GaN and InGaN/GaN heterostructure devices'', Phys. Rev. B, 61, 4, 773-2778, (2000).
  • E. Monroy, F. Vigué, F. Calle, I. Izpura, E. Muñoz, J.-P. Faurie, ''Time response analysis of ZnSe and ZnMgBeSe based Schottky barrier photodetectors'', Appl. Phys. Lett. 77, 2761-2763, (2000).
  • M.A. Sánchez-García, F.B. Naranjo, J.L. Pau, A. Jiménez, E. Calleja, E. Muñoz, ''Ultraviolet electroluminescence in GaN/AlGaN single heterojunction light emitting diodes grown on Si(111)'', J. Appl. Phys. 87,1596, (2000).
  • C. Córdoba, I. Aguirre De Cárcer, A. Pérez, A. Sanz, C. Angulo, P. Vila, E. Monroy, E. Muñoz, F. Jaque, ''UV-B irradiance at Madrid during 1996, 1997, and 1998'', Journal of Geophy. Research, Vol. 105, 4903-4906, (2000).
  • M. Kröger, A. Alba, M. Laso, H.C. Öttinger, ''Variance reduced Brownian simulation of a bead-spring chain under steady shear flow considering hydrodynamic interaction effects'', Journal of Chemical Physics 113, 4767-4773 (2000).
  • T. Palacios, F. Calle, M. Varela, C. Ballesteros, E. Monroy, F. B. Naranjo, M. A. Sánchez-García, E. Calleja, E. Muñoz, ''Wet etching of GaN grown by molecular beam epitaxy on Si (111)'', Semicond. Sci. Technol. 15, 996-1000, (2000).
 

 

 

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