Sputtering system with 4 magnetrons (3 on a ternary system and
1 independent). It provides a loadlock and a rotary system where six samples can be
sequentially exposed to the plasma. The sample are mounted vertically. A timer that stops
the plasma in all the magnetrons when one of them looses the plasma, controls all
the DC plasma sources. An automatic electrovalve controls the chamber Argon pressure.
A RF source for the deposition of insulators is also available.
This system has 7 magnetron sources, 3 of them grouped for ternary
growth and 2 for binary growth. The sample can be placed on a spinning wheel for the
deposition of multilayers, up to 5 different materials. Alternatively, the sample
holder could be a variable height rotating substrate for the deposition of ternary
elements. The system can reach 10-8 mbars in 12 hours, and it allow 6 samples in
each run, so it is ideal for large productions. All the magnetrons are
situated on the flange. This gives large versatility to the system as changing
the configuration would only require the design of a new flange.
This system has 3 magnetrons and a simple holder with a
temperature controller. This holder allows the flow of liquid nitrogen through
and it increases its temperature through a halogen lamp. The samples are mounted
horizontally. The main purpose of the system is the deposition of magnetic and
non-magnetic nanoparticles with any composition.
One magnetron reactive sputtering system and substrate heater to control
and measure the temperature. The substrate heater can handle samples up
to 7cm in diameter (about 3 inches) and can raise the sample temperature
up to 950ºC. Horizontal placement of substrates and lateral access
through a preload chamber. The system is dedicated exclusively to
deposit aluminum nitride (AlN) which allows for high purity material and
high C-axis orientation (necessary for piezoelectric applications).