Institute for Optoelectronic Systems and Microtechnology
Universidad Politécnica de Madrid


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Escuela Técnica Superior de Ingenieros de Telecomunicación

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Universidad Politécnica de Madrid

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MBE system for Arsenides (RIBER32)

Molecular Beam Epitaxy Reactor RIBER32 for III-Arsenides semiconductor growth, including dilute nitrides
  • Ultra-high vaccum growing chamber with base pressure of 5x10 -11 Torr. Cryogenic-ionic combined pumping system and liquid nitrogen cryo-panels
  • Intermediate chamber for e-beam metallic evaporation in Ultra-high vaccum
  • 5 efussion cells (Knudssen cells): Ga, Al, In, Si, Be
  • 1 Arsenic cracker cell (RIBER)
  • RF nitrogen plasma source (CARS25 Oxford Applied Research)
  • Optical Pyrometer for growing temperature measurements (IRCON series V)
  • 10 kV RHEED system
  • Residual gas analyzer (cuadrupole, Balzers Prisma model)

MBE system for Nitrides (MECA2000)

Molecular Beam Epitaxy Reactor MECA2000 for III-Nitrides semiconductor growth
  • Ultra-high vaccum growing chamber with base pressure of 5x10 -11 Torr. Cryogenic-ionic combined pumping system and liquid nitrogen cryo-panels
  • 6 efussion cells (Knudssen cells): Ga (double filament), Al, In, Si, Be y Mg
  • RF nitrogen plasma source (Unibulb from Applied Epi)
  • Optical Pyrometer for growing temperature measurements (IRCON series V)
  • 15 kV RHEED system
  • Residual gas analyzer (cuadrupole, Balzers Prisma model)

MBE system for Nitrides (RIBER COMPACT 21)

Molecular Beam Epitaxy Reactor RIBER Compact 21S for III-Nitrides semiconductor growth
  • Ultra-high vaccum growing chamber with base pressure of 3.5x10 -11 Torr. Cryogenic-ionic combined pumping system and liquid nitrogen cryo-panels
  • 6 efussion cells (Knudssen cells): Ga (double filament), Al, In (double filament), Si, Be y Mg
  • RF nitrogen plasma source (Addon)
  • Optical Pyrometer for growing temperature measurements (IRCON series V)
  • 15 kV RHEED system
  • Residual gas analyzer (cuadrupole)
 

 

 

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