Speaker: Dr. Sergio Catalán.
Organization: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM), de la E.T.S.I. Telecomunicación, Universidad Politécnica de Madrid.
Data: January 21st, 2022.
Hours: 10.00 hours.
Place: Room B-222 of the ETSI of Telecommunications of the UPM [Cómo llegar]
In the last decade, third generation solar cells have progressed very strongly in efficiency. The latter is a key metric in the development of photovoltaic systems for reducing the cost of electricity per kilowatt-hour. The short-circuit current (JSC) and the open-circuit voltage (VOC) of the solar cell are the two main factors that should be taken into account to have an optimized efficiency. Some materials show moderate JSC values that indicate that better light management must be applied to improve the solar cell. This includes better coupling and trapping of light above the cell and reduction of light absorption in inactive regions of the cell. In this work, we report on the improved performance of GaAsSb/GaAsN superlattices and reference bulk GaAs solar cells via light scattering from deposited gallium nanoparticles atop the devices. After minimal nanoparticle size optimization, JSC derived from external quantum efficiency measurements is increased around 20% for each case that reveal a higher light collection. Theoretical calculations and detailed optical measurements support the comprehension of the study. This simple method has potential to enable thinner photovoltaic layers in solar cells.