Workshop on Frontier Photonic and Electronic
Materials and Devices

2017 German-Japanese-Spanish Joint Workshop
March 5-8, 2017, Hotel Punta Rotja, Mallorca (Spain)


Invited Speakers:

Germany

Japan

  • Prof. Dr. Shigefusa Chichibu (Tohoku University)
    "Recent progress of ammonothermal growth of GaN using acidic mineralizers"
  • Prof. Dr. Hiroshi Fujioka (University of Tokyo)
    "Feasibility of Large Area Nitride Devices Prepared with Pulsed Sputtering"
  • Prof. Dr. Shizuo Fujita (Kyoto University)
    "Corundum-structured n-type and p-type wide band gap oxide semiconductors"
  • Prof. Dr. Yasufumi Fujiwara (Osaka University)
    "Challenge to highly efficient wavelength-stable red light-emitting diodes using Eu-doped GaN"
  • Prof. Dr. Hiroyuki Fukuyama (Tohoku University)
    "High temperature processes for AlN crystal growth"
  • Prof. Dr. Mitsuru Funato (Kyoto University)
    "AlN growth by an environmentally friendly method"
  • Dr. Hideki Hirayama (RIKEN)
    "Recent progress and prospects of high-efficiency deep-UV LEDs"
  • Prof. Dr. Motoaki Iwaya (Meijo University)
    "Fabrication and future prospects of AlGaN-based UV-emitters and Photosensors"
  • Prof. Dr. Tsunenobu Kimoto (Kyoto University)
    "Control of Carrier Lifetime and Application to Ultrahigh-Voltage SiC Bipolar Devices"
  • Prof. Dr. Katsumi Kishino (Sophia University)
    "Recent development of InGaN/GaN nanocolumn technology"
  • Prof. Dr. Masaaki Kuzuhara (University of Fukui)
    "High Breakdown Voltage AlGaN/GaN HEMTs Fabricated on Semi-insulating GaN Substrates"
  • Prof. Dr. Kazuyuki Tadatomo (Yamaguchi University)
    "Growth and Characterization of GaN Substrates for Power Devices"
  • Prof. Dr. Akihiko Yoshikawa (Chiba University)
    "Dynamic atomic layer epitaxy (D-ALEp) of fine strcuture GaN/InN/AlN QW- system"

Spain