Study GaAsN/AlAs/AlGaAs double barrier quantum wells grown by Molecular Beam Epitaxy as an alternative to infrared absoption below 4 µm.

Autores: A. Guzmán, E. Luna, J. Miguel-Sánchez, E. Calleja, E. Muñoz

Cita: Infrared Physics and Technology, 44, 377-382, (2003)

Año: 2003