Engineering of an Insulating Buffer and use of AlN Interlayers: two optimisations for AlGaN-GaN HEMT-like structures

Autores: Z. Bougrioua, I. Moerman, L. Nistor, B. Ban Daele, E. Monroy, T. Palacios, F. Calle, M. Leroux

Cita: Physica status solidi (a) 195, 93-100, (2003).

Año: 2003